Abstract: A surface mount electronic component includes an element including a dielectric layer that includes a first main surface and a second main surface, a first external electrode disposed on the first main surface, a second external electrode disposed on the second main surface, a first metal terminal connected to the first external electrode, a second metal terminal connected to the second external electrode, and an exterior material covering at least a portion of the element, the first and second external electrodes, and the first and second metal terminals. Upper and lower surfaces of the exterior material are flat or substantially flat.

Abstract: A surface mount electronic component includes an element including a dielectric layer that includes a first main surface and a second main surface, a first external electrode disposed on the first main surface, a second external electrode disposed on the second main surface, a first metal terminal connected to the first external electrode by solder, a second metal terminal connected to the second external electrode by the solder, and an exterior material covering at least a portion of the element, the first and second external electrodes, and the first and second metal terminals. The solder satisfies a relational expression: element diameter D (mm)×about 0.003 mm?solder cross-sectional area S (mm2)?element diameter D (mm)×about 0.02 mm.

Abstract: In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer).

Abstract: An adjustment mechanism configured to adjust a reference position of an optical axis of a projection lens of a lens unit has a reference axis perpendicular to the optical axis and disposed in a plane which intersects with a focal point of the projection lens. The lens unit moves in an extension direction of the reference axis in accordance with rotation of a second screw. An acting point of a force to move the lens unit is disposed in a plane formed by the optical axis and the reference axis.

Abstract: A control system for a vehicle includes an imaging device; a co-ECU to limit the travel speed of the vehicle; and an ECU to set the speed limit, that recognizes the speed limit value on a road while traveling, and sets the recognized speed limit value in the co-ECU. If the elapsed time since the speed limit value has been set reaches a predetermined time, the ECU estimates the speed limit value on the road while traveling, and if receiving a switch command, switches the speed limit value set in the co-ECU to the estimated speed limit value so as to avoid limiting the vehicle speed by a speed limit value that is different from the actual speed limit value on the road.

Abstract: A vehicle control system includes a limiter device, and a setting device to set an upper speed limit on the limiter device, based on speed limit values extracted from image information. The setting device includes a derivation unit to derive a condition to raise display priority for each speed limit value; an obtainment unit to obtain determination information for determining whether the condition is satisfied; a calculation unit to raise the display priority of the speed limit value that corresponds to the condition determined satisfied with the determination information, among the speed limit values extracted from the image information; a display control unit to display the speed limit values in descending order of the display priority; and a setting unit configured to set the upper speed limit on the limiter device, based on one of the displayed speed limit values, selected by an occupant of the vehicle.

Abstract: A high precision printing method taking into consideration the variance in the thickness of a printing target. An ink-jet printing method, including: (i) measuring a distance between a printing target and at least one nozzle; (ii) measuring a flying speed and a flying angle of an ink(a) discharged from the at least one nozzle; (iii) printing a test substrate with an ink to identify a location on which an ink(b) is spotted, and calculating a thickness-related displacement that is a displacement from the location on which the ink is spotted, based on a thickness difference between the printing target and the test substrate from results obtained in Step (i), and the flying speed and the flying angle of the ink(a) obtained in Step (ii); and (iv) discharging an ink(c) from the at least one nozzle to achieve actual printing of the printing target with the ink(c) while correcting the thickness-related displacement.

Abstract: A power conversion apparatus according to a first aspect comprises: a first communication unit configured to receive, from an external server, an output suppression message instructing output suppression of a dispersed power source; and a second communication unit configured to perform communication of a predetermined message having a predetermined format with a power management apparatus. The predetermined format includes an information element capable of storing setting information indicating a setting related to the output suppression of the dispersed power source. The second communication unit is configured to transmit, to the power management apparatus, the predetermined message including the setting information as the information element.

Abstract: Control system 100 comprises information equipment 300 located in a consumer's facility and a HEMS 200 controlling the information equipment 300 via a narrow area network 70. The HEMS 200 includes a transmission unit 320 which repetitively transmits to the information equipment 300 an operational instruction of instructing an operation of the information equipment 300 until transmission of an instruction different from the operational instruction is determined.

Abstract: A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer, a third nitride semiconductor layer formed over the second nitride semiconductor layer, a fourth nitride semiconductor layer formed over the third nitride semiconductor layer, a trench that penetrates the fourth nitride semiconductor layer and reaches as far as the third nitride semiconductor layer, a gate electrode disposed by way of a gate insulation film in the trench, a first electrode and a second electrode formed respectively over the fourth nitride semiconductor layer on both sides of the gate electrode, and a coupling portion for coupling the first electrode and the first nitride semiconductor layer.

Abstract: A communication apparatus comprises a first communication unit configured to receive, from an external server, an output suppression message instructing output suppression of a dispersed power source; and a second communication unit configured to perform communication of a predetermined message having a predetermined format with a power management apparatus that manages power of an equipment installed in a consumer's facility. The output suppression of the dispersed power source is performed in accordance with the output suppression message by a conversion apparatus that converts DC power output from the dispersed power source to AC power. The predetermined format includes an information element capable of storing at least one of first information and second information, the first information being related to a communication status with the conversion apparatus, the second information being related to an acquisition status of the output suppression message.

Abstract: A waveform measurement device includes an input spectrum acquisition unit for acquiring an input intensity spectrum being an intensity spectrum of pulsed light, an optical element inputting the pulsed light and outputting light having an intensity spectrum corresponding to a phase spectrum of the pulsed light, an output spectrum acquisition unit for acquiring an output intensity spectrum being an intensity spectrum of the light output from the optical element, and a phase spectrum determination unit for determining the phase spectrum of the pulsed light by comparing an output intensity spectrum calculated when the pulsed light having an input intensity spectrum and a virtual phase spectrum is assumed to be input to the optical element with the output intensity spectrum acquired in the output spectrum acquisition unit. The phase spectrum determination unit sets the virtual phase spectrum by deforming the control phase spectrum.

Abstract: In the control of light condensing irradiation of laser light using a spatial light modulator, the number of wavelengths of the laser light, a value of each wavelength, and incident conditions of the laser light are acquired (step S101), the number of light condensing points, and a light condensing position, a wavelength, and a light condensing intensity on each light condensing point are set (S104), and a light condensing control pattern to be provided for the laser light is set for each light condensing point (S107). Then, a modulation pattern to be presented in the spatial light modulator is designed in consideration of the light condensing control pattern (S108). Further, in the design of a modulation pattern, a design method focusing on an effect by a phase value of one pixel is used, and when evaluating a light condensing state on the light condensing point, a propagation function to which a phase pattern opposite to the light condensing control pattern is added is used.

Abstract: A control apparatus includes a lens, an SLM presenting a modulation pattern on a modulation plane and outputting modulated light L2 for forming light spots P1 and P2 on a pupil plane of the lens, an imaging device imaging a fringe pattern image formed on a focal plane of the lens and generating image data Da indicating the fringe pattern image, a calculation unit calculating at least one kind of parameter among an intensity amplitude, a phase shift amount, and an intensity average from the image data Da, an analysis unit obtaining a deviation in relative positions of an optical axis of the lens and a reference coordinate of the modulation plane based on the parameter, and a changing unit changing an origin position of the reference coordinate so that the deviation in the relative positions is decreased.

Abstract: The objective of the invention is to cause a load for reducing the warm-up time of an exhaust gas purifying device to be generated efficiently, and to make effective use of the energy required to reduce the warm-up time of the exhaust gas purifying device.

Abstract: A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, a gate electrode placed in the trench over a gate insulating film, and a first electrode and a second electrode formed over the second nitride semiconductor layer on both sides of the gate electrode, respectively.

Abstract: A method of manufacturing a semiconductor device includes forming a first nitride semiconductor layer, forming thereover a second nitride semiconductor layer having a band gap wider than that of the first nitride semiconductor layer, and thereby forming a stacked body, etching the stacked body with a first film placed over the stacked body and including a first opening portion as a mask to form a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, causing an end portion of the first film to retreat from an end portion of the trench, forming a second film over the first film including the inside of the trench, and forming a gate electrode over the second film.

Abstract: An electrode comes in ohmic contact with an AlGaN layer. A semiconductor device SD has a nitride semiconductor layer GN2, and an AlxGa(1-x)N layer AGN (hereinafter referred to as “AlGaN layer AGN), and Al electrodes DE, SE. in the AlGaN layer AGN, 0<x?0.2 is satisfied. Also, both of a concentration of a p-type impurity and a concentration of an n-type impurity in the AlGaN layer AGN are 1×1016 cm?3 or lower. In this example, the p-type impurity is exemplified by, for example, Be, C, and Mg, and the n-type impurity is exemplified by Si, S, and Se. Also, the Al electrodes DE and SE are connected to the AlGaN layer AGN. Because a composition ratio of Al is limited to the above-mentioned range, the Al electrodes DE and SE are brought into ohmic contact with the AlGaN layer AGN.

Abstract: A power conversion apparatus comprises a first communication unit configured to receive, from an external server, an output suppression message instructing output suppression of a dispersed power source; and a second communication unit configured to perform communication of a predetermined message having a predetermined format with a power management apparatus that manages power information of a consumer's facility. The predetermined format includes an information element capable of storing output suppression information related to the output suppression of the dispersed power source. The second communication unit is configured to transmit the predetermined message including the output suppression information as an information element to the power management apparatus.

Abstract: Provided is a touch panel having superior impact resistance and good design on an operation face side without a decorative layer. The touch panel is manufactured by providing a cover member on an operation face of the substrate and at an inner side of a lead-out line wiring region so as to avoid lead-out lines of the first electrodes and the second electrodes, and forming a housing portion by insert injection molding using resin material to the step portion created by disposing the cover member, so as to make a front face of the housing portion flush with a front face of the cover member, and so as to sandwich an outer edge of the substrate from upper and lower sides.