Abstract: A machining condition adjustment device adjusts laser beam machining conditions for a laser beam machining device to carry out laser beam machining of a workpiece, produces each of state variables including machining condition data, workpiece data, and plasma generation amount data and determination data including plasma generation amount determination data, and learns adjustment action for the laser beam machining conditions with respect to an amount of plasma generated in the laser beam machining of the workpiece under prescribed laser beam machining conditions, with use of the produced state variables and the produced determination data.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a stage, a backing plate and an earth shield. The stage is configured to hold a substrate that a film is to be deposited on. The backing plate faces the stage and is configured such that a target containing a film deposition material is to be joined. The earth shield has an opening configured to enclose the target, and a plurality of through holes provided over a whole circumference of a circumferential part of the opening.

Abstract: In a method for laser welding of workpieces W1 and W2, a laser beam is generated and a workpiece W1 is irradiated. An irradiation point of the laser beam is swung within a predetermined heating area on the workpiece W1 encompassing a welding location where laser welding is to be executed, heating the mating surface area of the workpieces W1 and W2 corresponding to the heating area to a temperature higher than or equal to the boiling point of the coating material of the workpiece W2 and lower than the melting point of the base material of the workpiece W1, forming a gap between the workpieces W1 and W2 by vaporizing the coating material by the heating, discharging the coating material through the gap to the outside of the mating surface area, and melting and welding together the welding location of the base materials of the workpieces W1 and W2.

Abstract: According to one embodiment, a radiation detector includes a photoelectric conversion substrate having a detection area and a non-detection area, a scintillator layer, a frame-shaped sealant, a cover, and a moisture absorbing layer. A light transmittance of the moisture absorbing layer is changed by changing an amount of moisture in the moisture absorbing layer. The moisture absorbing layer covers the entire scintillator layer in planar view.

Abstract: Biomarkers for diagnosing the disease activity, disease severity or disease type of severe cutaneous adverse drug reactions (SCARs) such as drug-induced hypersensitivity syndrome and Stevens-Johnson syndrome/toxic epidermal necrolysis are provided. Also provided is a method of testing SCARs, comprising measuring the expression of at least one protein selected from the group consisting of stratifin, TNF receptor superfamily member 8 (CD30/TNFRSF8), interleukin-1 receptor antagonist (IL-1Ra), and TNF receptor superfamily member 6B (DcR3/TNFRSF6B) in a sample derived from a subject.

Abstract: A laser processing system capable of reliably determining an abnormality in a jet during laser process. The laser processing system comprises a nozzle including an emission opening configured to emit a jet of an assist gas along an optical axis of a laser beam, the nozzle being configured to form a maximum point of velocity of the jet at a position away from the emission opening; a measuring instrument configured to measure any of the velocity of the jet and a sound generated by the jet impinging on a workpiece; and an abnormality determination section configured to determine whether or not output data of the measuring instrument is different from reference data.

Abstract: A laser processing system that can effectively blow out a material of a workpiece melted by a laser beam by effectively utilizing an assist gas emitted from a nozzle. The laser processing system comprises a nozzle including an emission opening configured to emit a jet of an assist gas along an optical axis of a laser beam, the nozzle being configured to forming a maximum point of velocity of the jet at a position away from the emission opening; a measuring instrument configured to measure the velocity of the jet; and a position acquisition section configured to acquire information representing a position of the maximum point based on output data of the measuring instrument.

Abstract: Disclosed is a machine learning device of a cutting condition adjustment apparatus including: a state observation section that observes, as state variables indicating a current state of an environment, cutting condition data indicating a laser cutting condition for a laser cutting and oblique rearward temperature rise data indicating a temperature rise value at an oblique rearward part of a cutting front of a workpiece, a determination data acquisition unit that acquires temperature rise value determination data for determining propriety of the temperature rise value during cutting based on the laser cutting condition for the laser cutting as determination data indicating a propriety determination result of the cutting of the workpiece, and a learning unit that learns the temperature rise value and adjustment of the laser cutting condition for the laser cutting in association with each other using the state variables and the determination data.

Abstract: A laser machine able to effectively satisfy cutting quality required on one side of a cutting spot of a workpiece. The laser machine comprising a machining head configured to emit a laser beam and an assist gas coaxially and non-coaxially; and a data table in which data of a machining condition for cutting a workpiece using the machining head, and a shift amount, by which a center axis of the assist gas is to be shifted from an optical axis of the laser beam in order to make cutting quality on both sides of a cutting line to be different during cutting the workpiece, are stored in associated with each other.

Abstract: A semiconductor device according to one embodiment includes: a semiconductor substrate; a peripheral circuit provided on the semiconductor substrate; and a stacked body provided above the peripheral circuit, which has a memory cell array. The peripheral circuit includes: a metal film including silicon; a silicide film stacked on the metal film; and a barrier metal film stacked on the silicide film.

Abstract: A machine learning apparatus able to obtaining an optimal shift amount of an assist gas. The machine learning apparatus comprises a state-observation section configured to observe machining condition data included in a machining program given to the laser machine, and measurement data of a dimension of dross generated at a cutting spot of the workpiece when the machining program is executed, as a state variable representing a current state of an environment in which the workpiece is cut; and a learning section configured to learn the shift amount in association with cutting quality of the workpiece, using the state variable.

Abstract: A laser processing system that can effectively blow out a material of a workpiece melted by a laser beam by effectively utilizing an assist gas emitted from a nozzle. The laser processing system comprising a nozzle including an emission opening configured to emit a jet of an assist gas along an optical axis of a laser beam, the nozzle being configured to form a maximum point of velocity of the jet at a position away from the emission opening; a measuring instrument configured to measure a sound generated by the jet impinging on an object; and a position acquisition section configured to acquire information representing the position of the maximum point based on output data of the measuring instrument.

Abstract: According to one embodiment, a semiconductor device includes: a wiring layer including a first metallic film provided on an oxide film, a second metallic film provided on the first metallic film, and a polysilicon film provided on the second metallic film; and an element layer provided on the wiring layer and including semiconductor elements electrically connected to the first metallic film. Standard Gibbs energy of formation of a first metal included in the first metallic film is lower than that of a second metal included in the second metallic film.

Abstract: A laser processing system that can effectively blow out a material of a workpiece that is melted by a laser beam by effectively utilizing an assist gas emitted from a nozzle. The laser processing system includes a nozzle including an emission opening configured to emit a jet of an assist gas along an optical axis of a laser beam, the nozzle being configured to form a maximum point of velocity of the jet at a position away from the emission opening; a measuring instrument configured to measure a supply flow rate of the assist gas to the nozzle; and a position acquisition section configured to acquire the position of the maximum point from a measurement value of the measuring instrument by predetermined calculation.

Abstract: A machining condition adjustment device adjusts settings of an ionizer so as to neutralize a charge carried by plasma generated during laser beam machining of a workpiece by a laser beam machining device, calculates an amount of charge per unit time that is to be radiated from the ionizer, based on the amount of charge carried by the plasma generated during the laser beam machining, and sets the ionizer to radiate the calculated amount of charge per unit time.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a stage, a backing plate and an earth shield. The stage is configured to hold a substrate that a film is to be deposited on. The backing plate faces the stage and is configured such that a target containing a film deposition material is to be joined. The earth shield has an opening configured to enclose the target, and a plurality of through holes provided over a whole circumference of a circumferential part of the opening.

Abstract: A laser machining device includes a first focus movement amount calculation section configured to calculate a focus movement amount based on comparison of a first measurement value obtained by averaging a plurality of measurement values measured by a returning light measurement unit within a first period and a second measurement value obtained by averaging a plurality of measurement values measured by the returning light measurement unit within a second period that is temporally later than the first period; and a focus position correction section configured to correct a focus position during laser machining based on the focus movement amount, and the first period is a period shortly after initiation of laser emission when the external optical system is not warmed up or is a period after correcting the focus position, and the second period is a period after passage of a certain time duration when the external optical system is warmed up.

Abstract: A laser processing system that can effectively blow out a material of a workpiece that is melted by a laser beam by effectively utilizing an assist gas emitted from a nozzle. The laser processing system includes a nozzle having an emission opening that emits a jet of the assist gas along an optical axis of the laser beam, the nozzle forming a maximum point of velocity of the jet at a position away from the emission opening and is configured such that during processing of the workpiece by the laser beam, a nozzle is disposed with respect to a process portion of the workpiece W, at a target position determined based on a position of the maximum point.

Abstract: A laser processing system that can effectively blow out a material of a workpiece melted by a laser beam by effectively utilizing an assist gas emitted from a nozzle. The laser processing system comprises a nozzle including an emission opening configured to emit a jet of an assist gas along an optical axis of a laser beam, the nozzle being configured to form a maximum point of velocity of the jet at a position away from the emission opening; and a tubular enclosure disposed between the nozzle and a workpiece and enclosing the jet, wherein the enclosure has a changeable radial inner dimension, and is configured to adjust the position of the maximum point by changing the inner dimension.

Abstract: A laser machining device includes a reflective plate disposed perpendicular to the optical axis of emitting light and having a constant reflectance to the emitting light; a return light measurement unit which measures intensity distribution of return light reflected off the reflective plate and returning to the external optical system via a beam splitter; a storage unit which stores the return light intensity distribution in a normal state as reference data; a preprocessing unit which performs processing of identifying at least one of an optical axis shift, a beam diameter anomaly, a mode anomaly, a ghost, contamination of a protective window, and a focus shift due to thermal lens effect on the basis of comparison between measurement data of the return light intensity distribution and the reference data, before laser machining; and a warning unit which warns of an anomaly in the external optical system in accordance with the preprocessing unit.