Patents by Inventor Takashi Kanazawa

Takashi Kanazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11508491
    Abstract: An irradiation target is formed into a sphere. The spherical irradiation target can be iridium metal containing natural or enriched iridium. The radiation source can be manufactured by manufacturing a spherical irradiation target, accommodating the spherical irradiation target in a rotating capsule, and rotating an axial flow impeller by a downward flow of a reactor primary coolant, whereby the rotating capsule is rotated. This radiation source provides an improved nondestructive inspection image having a high geometric resolution, and has no radiation source anisotropy and also has high target recyclability.
    Type: Grant
    Filed: December 15, 2020
    Date of Patent: November 22, 2022
    Assignee: CHIYODA TECHNOL CORPORATION
    Inventors: Hiroshi Kawamura, Hidetaka Kanazawa, Takashi Saito, Takashi Ishii
  • Patent number: 11414007
    Abstract: To provide a vehicle headlight whose irradiation light is capable of ensuring sufficient illuminance to the immediate front side of the vehicle. A vehicle headlight irradiating light to the front of a vehicle including a first unit which generates light in order to form a first low beam, a second unit which generates light in order to form a high beam and a second low beam, where a portion of the high beam on the lower end side overlaps a portion of the first low beam on the upper side, and the other portion is formed above the first low beam without overlapping the first low beam, and where a portion of the second low beam on the upper side overlaps a portion of the first low beam on the lower side, and the other portion is formed below the first low beam without overlapping the first low beam.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: August 16, 2022
    Assignees: STANLEY ELECTRIC CO., LTD., HONDA MOTOR CO., LTD.
    Inventors: Takashi Kanazawa, Ryuichi Nakano
  • Publication number: 20210387566
    Abstract: To provide a vehicle headlight whose irradiation light is capable of ensuring sufficient illuminance to the immediate front side of the vehicle. A vehicle headlight irradiating light to the front of a vehicle including a first unit which generates light in order to form a first low beam, a second unit which generates light in order to form a high beam and a second low beam, where a portion of the high beam on the lower end side overlaps a portion of the first low beam on the upper side, and the other portion is formed above the first low beam without overlapping the first low beam, and where a portion of the second low beam on the upper side overlaps a portion of the first low beam on the lower side, and the other portion is formed below the first low beam without overlapping the first low beam.
    Type: Application
    Filed: June 11, 2021
    Publication date: December 16, 2021
    Inventors: Takashi Kanazawa, Ryuichi Nakano
  • Patent number: 10711372
    Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: July 14, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Akihito Ohno, Kenichi Hamano, Takashi Kanazawa
  • Patent number: 10707075
    Abstract: A semiconductor wafer includes a silicon carbide substrate having a first carrier concentration, a carrier concentration transition layer, and an epitaxial layer provided on the carrier concentration transition layer, the epitaxial layer having a second carrier concentration, and the second carrier concentration being lower than the first carrier concentration. The carrier concentration transition layer has a concentration gradient in the thickness direction. The carrier concentration decreases as the film thickness increases from an interface between a layer directly below the carrier concentration transition layer and the carrier concentration transition layer, and the carrier concentration decreases at a lower rate of decrease as the film thickness of the carrier concentration transition layer increases.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: July 7, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kenichi Hamano, Akihito Ohno, Takuma Mizobe, Masashi Sakai, Yasuhiro Kimura, Yoichiro Mitani, Takashi Kanazawa
  • Publication number: 20200144053
    Abstract: A semiconductor wafer includes a silicon carbide substrate having a first carrier concentration, a carrier concentration transition layer, and an epitaxial layer provided on the carrier concentration transition layer, the epitaxial layer having a second carrier concentration, and the second carrier concentration being lower than the first carrier concentration. The carrier concentration transition layer has a concentration gradient in the thickness direction. The carrier concentration decreases as the film thickness increases from an interface between a layer directly below the carrier concentration transition layer and the carrier concentration transition layer, and the carrier concentration decreases at a lower rate of decrease as the film thickness of the carrier concentration transition layer increases.
    Type: Application
    Filed: November 28, 2016
    Publication date: May 7, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kenichi HAMANO, Akihito OHNO, Takuma MIZOBE, Masashi SAKAI, Yasuhiro KIMURA, Yoichiro MITANI, Takashi KANAZAWA
  • Publication number: 20190284718
    Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.
    Type: Application
    Filed: June 3, 2019
    Publication date: September 19, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Akihito OHNO, Kenichi HAMANO, Takashi KANAZAWA
  • Patent number: 10370775
    Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: August 6, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Akihito Ohno, Kenichi Hamano, Takashi Kanazawa
  • Publication number: 20170314160
    Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.
    Type: Application
    Filed: December 8, 2016
    Publication date: November 2, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Akihito OHNO, Kenichi HAMANO, Takashi KANAZAWA
  • Publication number: 20090088497
    Abstract: The purposes of the present invention are to provide a paving material which is easy to be handled, has less restriction on the conditions of execution of work, decomposes fast, and is superior in durability, and a method for construction of paved body using the paving material. The purposes are attained by providing a paving material and a method for construction of paved body using the same, said paving material comprises at least binder emulsion for pavement, non-water soluble epoxy resin, and amine compound(s) a hardener thereof, and is prepared by mixing these three ingredients at the time of the execution of work, at the scene of the execution of work. The purposes are also attained by providing binder emulsion for pavement comprising an amine compound(s) that is a hardener of epoxy resin and the amine compound comprises at least polyaminoamido.
    Type: Application
    Filed: August 23, 2006
    Publication date: April 2, 2009
    Applicants: PETRO CHEMICALS CO., LTD., NICHIREKI CO. LTD.
    Inventors: Yoshihito Sasada, Akito Hagiwara, Masahiko Fujii, Kazuma Takeuchi, Sadaharu Ueno, Takashi Kanazawa, Tada-aki Ikeda
  • Patent number: 7246079
    Abstract: Based on numerical values with respect to factors influencing shares of existing products and a new product evaluated by more than one people, a structured neural network calculates predictive shares of the new product predicted by the respective persons. Comprehensive evaluations on the respective products and the new product are calculated for each person, based on the numerical values with respect to the respective factors. Correlation coefficients between the comprehensive evaluations on the respective products by the respective persons and the actual shares are calculated. The predictive shares calculated by the structural neural network are layered out in accordance with the correlation coefficients for the respective person. Average values of the predictive shares and confidence intervals are calculated for the respective layers, and based on them and the calculation result obtained by the structured neural network, a share of the new product is predicted.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: July 17, 2007
    Assignee: Fujitsu Limited
    Inventors: Hideyuki Ando, Takashi Kanazawa, Naoto Miyashita, Koji Nishimoto
  • Publication number: 20020082902
    Abstract: Based on numerical values with respect to factors influencing shares of existing products and a new product evaluated by more than one people, a structured neural network calculates predictive shares of the new product predicted by the respective persons (S6). Comprehensive evaluations on the respective products and the new product are calculated for each person, based on the numerical values with respect to the respective factors (S10). Correlation coefficients between the comprehensive evaluations on the respective products by the respective persons and the actual shares are calculated (S12), and relationships between the are obtained (S12). Predictive shares of the new product are calculated for the respective persons based on the relationships and the comprehensive evaluations on the new product (S16). The predictive shares are layered out in accordance with the correlation coefficients for the respective persons (S18).
    Type: Application
    Filed: May 31, 2001
    Publication date: June 27, 2002
    Applicant: FUJITSU LIMITED
    Inventors: Hideyuki Ando, Takashi Kanazawa, Naoto Miyashita, Koji Nishimoto
  • Publication number: 20020049923
    Abstract: In case a drive failure has occurred in a particular drive device when a designated storage medium is being transferred into or from the particular drive device or is being mounted in the particular drive device, drive failure recover processing is carried out in predetermined order which includes: a first step of performing an operation for physically moving the storage medium relative to the particular drive device to be recovered from the drive failure; a second step of performing a reboot operation on the particular drive device; a third step of performing a hard reset operation on the particular drive device; and a fourth step of performing an operation for turning of f and then again turning on power to the particular drive device. once the particular drive device has successfully recovered from the drive failure through any of the operations of the first to fourth steps, the drive-failure recovery processing is brought to an end without performing the operation of the remaining step.
    Type: Application
    Filed: June 29, 2001
    Publication date: April 25, 2002
    Inventors: Takashi Kanazawa, Hiroyuki Suzuki
  • Publication number: 20010044877
    Abstract: There are provided a cartridge transport mechanism that sequentially transports a media cartridge, capable of storing a plurality of storage media, to predetermined positions corresponding to a plurality of library units, and a control device that performs control for passing a predetermined number of the storage medium between the media storage section or drive device of each of the library units and the media cartridge sequentially transported to the predetermined position corresponding to the library unit. As the media cartridge is sequentially transported to the predetermined positions, the library units each receive or send the predetermined number of the storage medium from or to the media cartridge.
    Type: Application
    Filed: May 17, 2001
    Publication date: November 22, 2001
    Inventors: Takashi Kanazawa, Hiroyuki Suzuki, Norio Matsuno
  • Patent number: 5871040
    Abstract: In producing thin slabs by continuous casting, a method is developed in which internal defects are reduced to improve a production yield. Narrow sides of cast slabs are cooled in a controlled manner to produce cast slabs having a projection in a center of each of the narrow sides to a height of 5-10 mm above the level of the edge portions, and squeeze reduction with a reduction of 10-45% is carried out while an unsolidified portion of the narrow sides of the slab is within 50-80% of the thickness of the cast slab.
    Type: Grant
    Filed: February 21, 1997
    Date of Patent: February 16, 1999
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Sadamichi Kaseda, Kazuo Okamura, Sei Hiraki, Takashi Kanazawa, Seiji Kumakura, Akihiro Yamanaka
  • Patent number: 5653898
    Abstract: An apparatus for manufacturing an optical fiber cable covered with a metal pipe forms a metal pipe by abutting two sides of a metal strip to be pulled, introduces an optical fiber or an optical fiber bundle into the metal pipe, and seals the opening of the metal pipe by laser welding. A squeeze shoe is arranged immediately before a welding position. The inner circumferential surface of the squeeze shoe is brought into contact with the metal pipe, and the section of this inner circumferential surface conforms to the outer circumferential surface of the metal pipe. The squeeze shoe is vertically divided into halves. Since the squeeze shoe is provided immediately before the welding position, the opening of the metal pipe can have a predetermined width and be welded. The opening width is adjusted in accordance with at least one of a diameter, thickness and composition of the metal strip and in accordance with at least one of a welding rate, laser beam power and laser beam focus shift amount of the laser welder.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: August 5, 1997
    Assignee: NKK Corporation
    Inventors: Yasunori Yoshie, Takashi Kanazawa
  • Patent number: 5582748
    Abstract: A method and apparatus for manufacturing a metal pipe-covered optical fiber cable perform extra length control of the metal pipe with respect to the optical fiber in accordance with length adjustment by reducing the diameter of the metal pipe while applying minimum tension or without applying any tension for extra length control to the optical fiber by means of a pair of rollers, so that a crack in the optical fiber is avoided and the service life of the optical fiber is prolonged.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: December 10, 1996
    Assignee: NKK Corporation
    Inventors: Yasunori Yoshie, Takashi Kanazawa
  • Patent number: 5153851
    Abstract: A selector is arranged to choose one of first and second incoming data. The first data is a fraction of a divisor applied from external circuitry, while the second data is a binary normalized first data in the event that the first data is not normalized in terms of a radix of the first data. The data chosen by the selector is stored in a register. A first predetermined number of upper bits (5 bits for example) of a fraction held in the register is checked to see if the fraction is normalized in terms of a radix of the first data. In the event that the fraction of a divisor stored in the register is found to be normalized in terms of a radix of the first data, the amount of shifting necessary to binary normalize the first predetermined number of upper bits of a fraction is determined. The amount of shifting thus detected is used to shift or binary normalize a second predetermined number of upper bits of a fraction stored in the register.
    Type: Grant
    Filed: July 11, 1990
    Date of Patent: October 6, 1992
    Assignee: NEC Corporation
    Inventors: Takashi Kanazawa, Masayuki Kimura
  • Patent number: 5077663
    Abstract: A method of exchanging information in a processing system including the steps of storing the internal state information of a first arithmetic processing unit upon occurrence of a fault into a system control unit, sending a processor relief instruction from the system control unit to a second arithmetic processing unit, suppressing the updating of the internal state information of the second arithmetic processing unit, storing the internal state information of the second processing unit into the system control unit, transferring the internal state information of the first arithmetic processing unit from the system control unit to the second arithmetic processing unit, and sending a reset and actuating signal from the system control unit to the second arithmetic processing unit.
    Type: Grant
    Filed: May 13, 1991
    Date of Patent: December 31, 1991
    Assignee: NEC Corporation
    Inventor: Takashi Kanazawa
  • Patent number: 5040108
    Abstract: A method of exchanging information in a processing system including the steps of issuing a clock synchronizing instruction from an operating system, holding the clock synchronizing instruction in a communication information holding unit, suppressing the updating of internal state information in a first arithmetic unit in response to the holding signal, outputting a communication demand signal from the communication information holding unit to a system control unit, freezing the updating of the calendar clock values in respective first and second arithmetic processing units, receiving in the system control unit the first clock value from the first arithmetic processing unit, storing the first calendar clock value in the second arithmetic processing unit, issuing a restarting signal to the arithmetic processing units, and issuing a microprogram actuating instruction to the arithmetic processing units from the system control unit.
    Type: Grant
    Filed: April 23, 1990
    Date of Patent: August 13, 1991
    Assignee: NEC Corporation
    Inventor: Takashi Kanazawa