Abstract: This optical modulation element includes a first optical waveguide, a second optical waveguide, a first electrode for applying an electric field to the first optical waveguide, and a second electrode for applying an electric field to the second optical waveguide. The first optical waveguide and the second optical waveguide each include a ridge-shaped portion protruding from a first surface of a lithium niobate film. A first interaction length L1 that is a length of a part of the first electrode overlapping the first optical waveguide in a longitudinal direction is 0.9 mm or more and 20 mm or less. A second interaction length L2 that is a length of a part of the second electrode overlapping the second optical waveguide in the longitudinal direction is 0.9 mm or more and 20 mm or less.

Abstract: A transmission device of the present disclosure is a transmission device that transmits a visible light signal to a receiving device, and includes a laser light source configured to emit visible light, and an optical modulator configured to change intensity of the visible light and generate a visible light signal, in which the optical modulator has an optical waveguide that serves as a transmission path for the visible light, and the optical waveguide is formed of a material containing lithium niobate.

Abstract: A substrate with a dielectric thin film 1 includes a single-crystal substrate, a stress relaxation layer, and a dielectric thin film, in which the stress relaxation layer is made of a c-axis-oriented epitaxial film, and includes a twin crystal structure of LiNbO3 including a first and a second crystal existing at a position obtained by rotating the first crystal 180° about a c-axis and a LiNb3O8 phase, the dielectric thin film is made of a lithium niobate film which is a c-axis-oriented epitaxial film, has the twin crystal structure of LiNbO3, has a film thickness of 0.5 ?m to 2 ?m, and has a maximum domain width greater than a maximum domain width of the stress relaxation layer, and a percentage of a film thickness of the stress relaxation layer to the film thickness of the dielectric thin film is 5% to 25%.

Abstract: A transmission device of the present disclosure is a transmission device that transmits a visible light signal to a receiving device, and includes a laser light source configured to emit visible light, and an optical modulator configured to change intensity of the visible light and generate a visible light signal, in which the optical modulator has an optical waveguide that serves as a transmission path for the visible light, and the optical waveguide is formed of a material containing lithium niobate.

Abstract: A transceiver device includes: a receiving device including a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the receiving device is configured to receive an optical signal; a transmission device including a modulated light output element, wherein the transmission device is configured to transmit an optical signal; and a circuit chip including an integrated circuit electrically connected to the magnetic element and the modulated light output element.

Abstract: A transceiver device includes: a receiving device including a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the receiving device is configured to receive an optical signal; a transmission device including a modulated light output element, wherein the transmission device is configured to transmit an optical signal; and a circuit chip including an integrated circuit electrically connected to the magnetic element and the modulated light output element.

Abstract: A visible light modulation device includes a light source part having a plurality of optical semiconductor devices configured to emit light with a visible light wavelength of 400 nm to 700 nm, and a light modulation output part having three Mach-Zehnder type optical waveguides consisting of a convex fabricated lithium niobate film, and being configured so that light emitted from each of the plurality of optical semiconductor devices is incident on the corresponding Mach-Zehnder type optical waveguide.

Abstract: This optical coupler for coupling a plurality of visible light beams having different wavelengths includes: a substrate made of a material different from lithium niobate; and an optical coupling function layer formed on a main surface of the substrate. The optical coupling function layer includes: two multimode-interference-type optical coupling parts; optical-input-side waveguides and an optical-output-side waveguide connected to one multimode-interference-type optical coupling part, and optical-input-side waveguides and an optical-output-side waveguide connected to the other multimode-interference-type optical coupling part. The multimode-interference-type optical coupling parts, the optical-input-side waveguides, and the optical-output-side waveguides are made of a lithium niobate film.

Abstract: A transceiver device includes: a receiving device including a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the receiving device is configured to receive an optical signal; a transmission device including a modulated light output element, wherein the transmission device is configured to transmit an optical signal; and a circuit chip including an integrated circuit electrically connected to the magnetic element and the modulated light output element.

Abstract: An optical modulation element is provided with a substrate, a waveguide layer formed on the substrate, a dielectric layer formed on the waveguide layer, and an electrode formed on the dielectric layer. An outer peripheral end portion of the dielectric layer has an offset area positioned inside an outer peripheral end portion of the substrate. In at least a part of the offset area, a distance from the outer peripheral end portion of the substrate to the outer peripheral end portion of the dielectric layer is equal to or less than a distance from the outer peripheral end portion of the substrate to the outer peripheral end portion of the electrode.

Abstract: A transceiver device includes: a receiving device including a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the receiving device is configured to receive an optical signal; a transmission device including a modulated light output element, wherein the transmission device is configured to transmit an optical signal; and a circuit chip including an integrated circuit electrically connected to the magnetic element and the modulated light output element.

Abstract: An optical circuit element capable of preventing stray light propagated through a part including a substrate of the optical circuit element from being emitted to the outside is provided. The optical circuit element has a substrate, an optical waveguide layer that is formed on one surface of the substrate, and a protective layer that is overlaid on the optical waveguide layer. The optical waveguide layer has an optical waveguide configured for light to be propagated therethrough. A groove portion, which reaches to a position deeper than the one surface from a surface of the protective layer toward the substrate, is formed. The optical circuit element further includes a light absorption layer that covers at least a bottom surface and a side surface of the groove portion.

Abstract: A light source unit (1000) of the present disclosure includes a light source part (100), a first electrical signal generating device (40-1) configured to control current that drives an optical semiconductor device (30), an optical modulator (200) having a Mach-Zehnder type optical waveguide (10) and an electrode configured to apply an electric field to the optical waveguide (10), and a second electrical signal generating device (40-2) configured to control a voltage that operates the optical modulator (200), the first electrical signal generating device (40-1) and the second electrical signal generating device (40-2) are synchronizably connected to each other, and intensity of light emitted from the optical modulator (200) is changed by the current controlled by the first electrical signal generating device (40-1) and the voltage controlled by the second electrical signal generating device (40-2).

Abstract: This optical modulator includes an optical modulation element having a first optical waveguide, a second optical waveguide, a first electrode configured to apply an electric field to the first optical waveguide, and a second electrode configured to apply an electric field to the second optical waveguide; and a control unit configured to control an applied voltage between the first electrode and the second electrode. The control unit sets Vpp to 0.06×V??Vpp?0.4×V? when a half-wavelength voltage of the optical modulation element is V? and an applied voltage width that is an amplitude of an applied voltage applied to the optical modulation element is Vpp, and sets Vn?Vmin?Vn+0.29×V? or Vn?0.29×V??Vmax?Vn when a minimum value and a maximum value of a voltage applied to the optical modulation element are respectively Vmin and Vmax and a null point voltage of the optical modulation element is Vn.

Abstract: The optical modulator includes an optical modulation element having a first optical waveguide, a second optical waveguide, a first electrode which applies an electric field to the first optical waveguide, and a second electrode which applies an electric field to the second optical waveguide, and a control unit configured to control an applied voltage between the first electrode and the second electrode. When a half-wave voltage of the optical modulation element is V? and a null point voltage of the optical modulation element is Vn, the control unit sets an operating point Vd in a range of Vn+0.50V??Vd?Vn+0.75V? or Vn?0.75V??Vd?Vn?0.50V? and sets an applied voltage width Vpp, which is an amplitude of an applied voltage applied to the optical modulation element, in a range of 0.22V??Vpp?0.50V?.

Abstract: This optical modulation element includes a first optical waveguide, a second optical waveguide, a first electrode for applying an electric field to the first optical waveguide, and a second electrode for applying an electric field to the second optical waveguide. The first optical waveguide and the second optical waveguide each include a ridge-shaped portion protruding from a first surface of a lithium niobate film. A first interaction length L1 that is a length of a part of the first electrode overlapping the first optical waveguide in a longitudinal direction is 0.9 mm or more and 20 mm or less. A second interaction length L2 that is a length of a part of the second electrode overlapping the second optical waveguide in the longitudinal direction is 0.9 mm or more and 20 mm or less.

Abstract: An optical device that includes at least one magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a substrate; and a waveguide is provided, wherein the waveguide and the magnetic element are located on or above the substrate, and wherein at least some of light propagating in the waveguide is applied to the magnetic element.

Abstract: A optical modulation element includes a substrate made of a material different from lithium niobate, a lithium niobate film formed on a main surface of the substrate, the lithium niobate film including a Mach-Zehnder-type optical waveguide having a first ridge and a second ridge that function as a first optical waveguide and a second optical waveguide, respectively, wherein both the first ridge and the second ridge having a cross-sectional shape fixed portion, at least one of the first ridge and the second ridge having a cross-sectional shape non-fixed portion in which the cross-sectional shape is different from that of the cross-sectional shape fixed portion, and the optical output obtained when the DC bias voltage applied between the first electrode and the second electrode is 0 (V) is smaller than the maximum of the optical output obtained when the DC bias voltage is changed in a predetermined voltage range.

Abstract: A transceiver device includes: a receiving device including a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the receiving device is configured to receive an optical signal; a transmission device including a modulated light output element, wherein the transmission device is configured to transmit an optical signal; and a circuit chip including an integrated circuit electrically connected to the magnetic element and the modulated light output element.

Abstract: A transmission device of the present disclosure is a transmission device that transmits a visible light signal to a receiving device, and includes a laser light source configured to emit visible light, and an optical modulator configured to change intensity of the visible light and generate a visible light signal, in which the optical modulator has an optical waveguide that serves as a transmission path for the visible light, and the optical waveguide is formed of a material containing lithium niobate.