Abstract: A semiconductor device includes a semiconductor substrate, a tunnel insulating film on the semiconductor substrate, a charge storage layer on the tunnel insulating film, a block insulating film on the charge storage layer, and a control gate electrode on the block insulating film, the charge storage layer including a plurality of layers including first and second charge storage layers, the second charge storage layer being provided on a nearest side of the block insulating film, the first charge storage layer being provided between the tunnel insulating film and the second charge storage layer, the second charge storage layer having a higher trap density than the first charge storage layer, the second charge storage layer having a smaller band gap than the first charge storage layer, and the second charge storage layer having a higher permittivity than the first charge storage layer and a silicon nitride film.

Abstract: A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

Abstract: A parallel mechanism includes a base, actuators attached to the base, a plurality of arms coupled together in parallel, and a sensing device. Each of the arms has a first link, one end of which is coupled to the actuator, a second link through which the other end of the first link and a bracket are coupled together, a ball joint through which one end of the second link and the other end of the first link are swingably coupled together, and a ball joint through which the other end of the second link and the bracket are swingably coupled together. Each of the ball joints includes a ball stud including a ball-shaped head, a socket swingably holding the ball-shaped head of the ball stud, and a conductive member interposed between the ball-shaped head and the socket. The sensing device senses when at least one of the plurality of ball joints is loose, based on whether or not the ball stud and the socket are electrically continuous with one another.

Abstract: A gas sensor (200) has a gas sensor element (10) including a first measurement chamber (16); a first pumping cell (11) having a first interior pump electrode (11c) and its counterpart electrode (11b); a second measurement chamber (18); a second pumping cell (13) that has a second interior pump electrode (13b); and a beater (50). The heater (50) has a lead section (50a); a first resistance portion (50bx) having a higher resistance than the lead portion (50a); and a main heating portion (50k) having a second resistance portion (50by) having a higher resistance than the first resistance portion (50bx) disposed at a leading end side in a longitudinal direction relative to a leading end of the first resistance portion (50bx). The second interior pump electrode (13b) is located within the first resistance portion (50bx) in the longitudinal direction.

Abstract: In a branch section 1 or a merge section of a rail vehicle system, an auxiliary travel surface 17 on the straight lane side includes a deformed portion 54 where the height is increased for supporting an auxiliary wheel 6 of a traveling vehicle 2. The traveling vehicle 2 is supported by the auxiliary wheel 6 and guide rollers 24, 20 such that the traveling vehicle 2 is orientated horizontally in the left-right direction, or the branch lane side D of the traveling vehicle 2 is oriented slightly upwardly.

Abstract: A height sensor 26 and an image recognizing section 28 are installed in a teaching unit 24; the height sensor 26 contacts a pin 30a on a load port 4 to detect the height position of the pin 30a and the image recognizing section 28 recognizes a pin 30c and thus its horizontal plane position. A platform 16 of an overhead travelling carriage 8 grips and lowers the teaching unit 24 toward the load port 4. The height sensor 26 then detects the height of the load port 4. Then, the teaching unit 24 is slightly raised. The horizontal plane position of the pin 30c is recognized and averaged over a time equal to at least the vibration period of the platform 16. As a result, the position of the load port can be accurately taught to the overhead travelling carriage 8 without preparations such as the installation of marks on the load port.

Abstract: A biometrics authentication system capable of achieving high precision and high safety is provided. A biometrics authentication system includes: a light source applying light to a living organism; a microlens array section condensing light from the living organism, and including a plurality of microlenses each having a different refractive power; an image pickup device obtaining image pickup data on a plurality of layers of the living organism on the basis of light condensed by the microlens array section; and an authentication section performing authentication of the living organism on the basis of image pickup data on the plurality of layers of the living organism.

Abstract: A first gasket 10 is placed in a groove formed in a cam cover and seals a gap between a cylinder head and the cam cover. The first gasket 10 includes a pair of seal lips 13 which come into tight contact with the cylinder head and which are provided in parallel to each other, and a plurality of connecting portions 15 which are provided between the pair of seal lips 13, which are connected to each of the seal lips 13, and which hold a distance between the seal lips 13 near the connected portion.

Abstract: An object is to provide a gas sensor which can suppress positional shift of a to-be-held member such as a gas detection element, as well as a method of manufacturing the gas sensor. A gas sensor (101) includes a gas detection element (111), a metallic shell (131), a plate packing (157), and a first packing (159). A proximal end surface (113t2) of a projection (113) of the gas sensor element (111) and a central inner circumferential surface (135n) of the metallic shell (131) form an acute-angle clearance (120). The first packing (159), which has a wedge-like cross section, is disposed in the clearance (120) such that the first packing (159) is pressed against the proximal end surface (113t2) of the projection (113) of the gas sensor element (111) and the central inner circumferential surface (135n) of the metallic shell (131).

Abstract: A direct bond substrate formed by bonding semiconductor substrates together, a semiconductor device using the direct bond substrate and a manufacturing method thereof are disclosed. A nitride film, oxynitride film, carbide film or an oxide film containing carbon is provided on the bonded interface of the semiconductor substrates in the direct bond substrate.

Abstract: A dog 10 is placed in front of each stop position 8 to notice an overhead running vehicle 20 that ID tag data is to be read. A bar code reader 24 reads the ID tag data to determine the stop position based on a mark reference. The absolute position of an overhead running vehicle 20 with respect to the mark 14 is determined. The overhead running vehicle 20 decelerates and stops at a target position. According to the present invention, the overhead running vehicle 20 can stop without creep running.

Abstract: A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

Abstract: A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.

Abstract: A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

Abstract: A platform 12 is supported by four belts 22 to 25. Of the belts 22 to 25, a pair of belts 24, 25 is attached to a pivoting arm 26 so that the pivoting arm 26 is pivotable around a pivoting shaft 28. Pivoting of the pivoting arm 26 absorbs, for example, the difference in length between the belts 24, 25. The present invention makes it possible to simplify an elevate and lower driving mechanism of the platform 12 and to easily adjust the lengths of the belts 22 to 25. The present invention also makes it possible to prevent vibration during elevation or lowering and to allow the belts 22 to 25 to stand long use.

Abstract: An overhead buffer 24 is provided on a side of a running rail 4 for an overhead travelling carriage 8. The height level of an article on the overhead buffer 24 is slightly lower than that on the running overhead travelling carriage 8. This height is at least such that the overhead buffer 24 does not interfere with an operator. According to the present invention, the overhead buffer can be installed even if load ports are consecutively provided.

Abstract: A side buffer 40 is provided on a side of a traveling rail 6 of an overhead traveling vehicle 8. Multiple levels of racks 41, 42 are provided. The overhead traveling means 8 has elevating and lowering means including components such as a linear guide 32 and a ball screw 26 for elevating and lowering a lateral movement unit 16.

Abstract: An encoding system capable of preventing the overflow of a buffer and performing the encoding of a VOP within a predetermined time period even where the processing time period necessary for encoding each macroblock is not constant. In order to provide the encoding system, the maximum number of bits Tmax is set for each VOP, and the output of encoding unit and the output of fixed code output unit is switched and outputted so that the number of bits Sc of the VOP may not exceed the Tmax.

Abstract: In the present invention, an optical pick-up (4) applies an optical beam to an optical disc (2) on which one or more information recording layers (20A) and (20B) are laminated in the direction of thickness through an objective lens (34) and detects a reflected light from one of the information recording layers laminated on the optical disc. A first photodetecting part (81) for detecting the reflected light from the one information recording layer and a second photodetecting part (82) composed of one or more light receiving surfaces for detecting a stray light from other information recording layers are mounted on a light receiving element (52). The number of the information recording layers laminated on the optical disc (2) is discriminated on the basis of the intensity of the stray light detected by the second photodetecting part (82). The optical pick-up (4) is controlled in accordance with the discriminated number of the information recording layers before a focus is controlled.

Abstract: A biometrics authentication system capable of achieving high precision and high safety is provided. A biometrics authentication system includes: a light source applying light to a living organism; a microlens array section condensing light from the living organism, and including a plurality of microlenses each having a different refractive power; an image pickup device obtaining image pickup data on a plurality of layers of the living organism on the basis of light condensed by the microlens array section; and an authentication section performing authentication of the living organism on the basis of image pickup data on the plurality of layers of the living organism.