Patents by Inventor Takashi Okagawa

Takashi Okagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200335547
    Abstract: A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.
    Type: Application
    Filed: July 6, 2020
    Publication date: October 22, 2020
    Inventors: Yu Nishimura, Sho Suzuki, Yasushi Matsuno, Yusuke Onuki, Masahiro Kobayashi, Takashi Okagawa, Yoshiyuki Nakagawa
  • Patent number: 10763298
    Abstract: A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: September 1, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Yu Nishimura, Sho Suzuki, Yasushi Matsuno, Yusuke Onuki, Masahiro Kobayashi, Takashi Okagawa, Yoshiyuki Nakagawa
  • Patent number: 10475829
    Abstract: A semiconductor apparatus includes a conductive member including a polycrystalline silicon layer having a first, second and third portions, an interlayer insulation film that covers the conductive member, a first silicon nitride layer arranged between the interlayer insulation film and the third portion, a second silicon nitride layer arranged between the interlayer insulation film and the first portion and between the interlayer insulation layer and the second portion, a first contact plug disposed above the first portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member, and a second contact plug disposed above the second portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member. The first silicon nitride layer is disposed between the first and second contact plugs, and apart from the first and second contact plugs.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: November 12, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Mitsuhiro Yomori, Takehito Okabe, Nobuaki Kakinuma, Takashi Okagawa
  • Patent number: 10461119
    Abstract: A solid-state imaging device includes a light-shielding layer that is disposed in a pixel region containing a pixel including a photoelectric conversion element and a charge holding portion and a peripheral region in which a signal from the pixel is processed and that is electrically connected to a substrate at a contact portion in the peripheral region, a first insulating layer that has an end portion between the charge holding portion and the contact portion in plan view and that is disposed between the substrate and the light-shielding layer, and a first insulating member that is disposed on a side surface of the end portion of the first insulating layer and that buffers a step due to the end portion. A portion of the light-shielding layer overlapping the first insulating member in the plan view has an upper surface having a shape following a shape of the first insulating member.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: October 29, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventors: Sho Suzuki, Kentaro Suzuki, Takashi Okagawa
  • Patent number: 10431617
    Abstract: There is provided a photoelectric conversion device in which a distance from a main surface to an inner surface of a first part of a dielectric film is smaller than a distance from the main surface to a top surface of a light shielding member, a distance from the main surface to an outer surface of the first part is smaller than a distance from the main surface to an outer surface of a second part of the dielectric film, an outer surface of a third part inclines to the top surface, a surface of a dielectric member inclines to the top surface, between the dielectric film and the top surface in a normal direction, and the dielectric member has a refractive index lower than a refractive index of the dielectric film.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: October 1, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akihiro Kawano, Yoshiyuki Nakagawa, Masao Ishioka, Takashi Okagawa
  • Publication number: 20190267421
    Abstract: Image capturing device includes semiconductor substrate having photoelectric converters in light-receiving area and light-shielded area, insulating film arranged above principal face of the substrate and having holes arranged above the photoelectric converters, waveguide portions arranged in the holes, connecting portion connecting the waveguide portions above the insulating film, light-shielding film arranged on the connecting portion having opening in the light-receiving area, SiN film arranged on the light-shielding film so that the opening is arranged between the SiN film and the substrate in the light-receiving area, and insulator film having portion located in the opening and having portion located between the light-shielding film and the SiN film. Distance between upper face of the light-shielding film and the principal face is smaller than distance between lower face of the SiN film and the principal face.
    Type: Application
    Filed: February 19, 2019
    Publication date: August 29, 2019
    Inventors: Sho Suzuki, Mitsuhiro Yomori, Takehito Okabe, Takashi Okagawa
  • Publication number: 20190019825
    Abstract: A semiconductor apparatus includes a conductive member including a polycrystalline silicon layer having a first, second and third portions, an interlayer insulation film that covers the conductive member, a first silicon nitride layer arranged between the interlayer insulation film and the third portion, a second silicon nitride layer arranged between the interlayer insulation film and the first portion and between the interlayer insulation layer and the second portion, a first contact plug disposed above the first portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member, and a second contact plug disposed above the second portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member. The first silicon nitride layer is disposed between the first and second contact plugs, and apart from the first and second contact plugs.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 17, 2019
    Inventors: Mitsuhiro Yomori, Takehito Okabe, Nobuaki Kakinuma, Takashi Okagawa
  • Publication number: 20180247967
    Abstract: There is provided a photoelectric conversion device in which a distance from a main surface to an inner surface of a first part of a dielectric film is smaller than a distance from the main surface to a top surface of a light shielding member, a distance from the main surface to an outer surface of the first part is smaller than a distance from the main surface to an outer surface of a second part of the dielectric film, an outer surface of a third part inclines to the top surface, a surface of a dielectric member inclines to the top surface, between the dielectric film and the top surface in a normal direction, and the dielectric member has a refractive index lower than a refractive index of the dielectric film.
    Type: Application
    Filed: February 26, 2018
    Publication date: August 30, 2018
    Inventors: Akihiro Kawano, Yoshiyuki Nakagawa, Masao Ishioka, Takashi Okagawa
  • Publication number: 20180138234
    Abstract: A solid-state imaging device includes a light-shielding layer that is disposed in a pixel region containing a pixel including a photoelectric conversion element and a charge holding portion and a peripheral region in which a signal from the pixel is processed and that is electrically connected to a substrate at a contact portion in the peripheral region, a first insulating layer that has an end portion between the charge holding portion and the contact portion in plan view and that is disposed between the substrate and the light-shielding layer, and a first insulating member that is disposed on a side surface of the end portion of the first insulating layer and that buffers a step due to the end portion. A portion of the light-shielding layer overlapping the first insulating member in the plan view has an upper surface having a shape following a shape of the first insulating member.
    Type: Application
    Filed: November 8, 2017
    Publication date: May 17, 2018
    Inventors: Sho Suzuki, Kentaro Suzuki, Takashi Okagawa
  • Publication number: 20180122852
    Abstract: A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.
    Type: Application
    Filed: October 24, 2017
    Publication date: May 3, 2018
    Inventors: Yu Nishimura, Sho Suzuki, Yasushi Matsuno, Yusuke Onuki, Masahiro Kobayashi, Takashi Okagawa, Yoshiyuki Nakagawa
  • Patent number: 8716770
    Abstract: A solid-state imaging apparatus comprises: a plurality of photoelectric conversion elements for converting light into an electric charge, including a first photoelectric conversion element; a first semiconductor region from which the electric charge is transferred from a first photoelectric conversion element; an amplifying MOS transistor including a gate electrode connected to the first semiconductor region to amplify the potential of the first semiconductor region; an insulating film; a metal wiring layer above the insulating film; a local interconnect of a first conductor, formed in the insulating film, for connecting the gate electrode of the amplifying MOS transistor to the first semiconductor region not through the metal wiring layer; a second semiconductor region, different from the first semiconductor region; and a second conductor for connecting the second semiconductor region to at least a part of the metal wiring layer.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: May 6, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takashi Okagawa
  • Patent number: 8304278
    Abstract: A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: November 6, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroaki Naruse, Takashi Okagawa, Ryuichi Mishima, Nobuhiko Sato, Hiroshi Yuzurihara
  • Publication number: 20110027934
    Abstract: A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
    Type: Application
    Filed: October 14, 2010
    Publication date: February 3, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hiroaki Naruse, Takashi Okagawa, Ryuichi Mishima, Nobuhiko Sato, Hiroshi Yuzurihara
  • Publication number: 20100320517
    Abstract: A solid-state imaging apparatus comprises: a plurality of photoelectric conversion elements for converting light into an electric charge, including a first photoelectric conversion element; a first semiconductor region from which the electric charge is transferred from a first photoelectric conversion element; an amplifying MOS transistor including a gate electrode connected to the first semiconductor region to amplify the potential of the first semiconductor region; an insulating film; a metal wiring layer above the insulating film; a local interconnect of a first conductor, formed in the insulating film, for connecting the gate electrode of the amplifying MOS transistor to the first semiconductor region not through the metal wiring layer; a second semiconductor region, different from the first semiconductor region; and a second conductor for connecting the second semiconductor region to at least a part of the metal wiring layer.
    Type: Application
    Filed: May 7, 2010
    Publication date: December 23, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Takashi Okagawa
  • Patent number: 7842988
    Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: November 30, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takashi Okagawa, Hiroaki Naruse, Hiroshi Yuzurihara, Shigeru Nishimura, Takeshi Aoki, Yuya Fujino
  • Patent number: 7838918
    Abstract: A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: November 23, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroaki Naruse, Takashi Okagawa, Ryuichi Mishima, Nobuhiko Sato, Hiroshi Yuzurihara
  • Publication number: 20100230728
    Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.
    Type: Application
    Filed: May 21, 2010
    Publication date: September 16, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Takashi Okagawa, Hiroaki Naruse, Hiroshi Yuzurihara, Shigeru Nishimura, Takeshi Aoki, Yuya Fujino
  • Patent number: 7749788
    Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: July 6, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takashi Okagawa, Hiroaki Naruse, Hiroshi Yuzurihara, Shigeru Nishimura, Takeshi Aoki, Yuya Fujino
  • Publication number: 20090135481
    Abstract: The directions of amplitude of polarized light passing through a polarizer are concentric around a position. The polarizer is disposed on the surface of a pupil such that the position lies exactly on the center of the surface of the pupil. Rays of luminous flux of illumination light converted into polarized light by the polarizer are converged onto a wafer with concentric planes of polarization with respect to an optical axis. The illumination light is therefore incident on a photoresist as s-polarized light. Thus, the amount of light entering the photoresist is less likely to depend upon the angle of incidence. Consequently, the contrast of an optical image formed in the photoresist is improved, and hence, resolution characteristics are improved.
    Type: Application
    Filed: January 26, 2009
    Publication date: May 28, 2009
    Applicant: RENESAS TECHNOLOGY CORP.
    Inventors: Tetsuya Yamada, Atsushi Ueno, Takashi Okagawa
  • Patent number: 7499148
    Abstract: The directions of amplitude of polarized light passing through a polarizer are concentric around a position. The polarizer is disposed on the surface of a pupil such that the position lies exactly on the center of the surface of the pupil. Rays of luminous flux of illumination light converted into polarized light by the polarizer are converged onto a wafer with concentric planes of polarization with respect to an optical axis. The illumination light is therefore incident on a photoresist as s-polarized light. Thus, the amount of light entering the photoresist is less likely to depend upon the angle of incidence. Consequently, the contrast of an optical image formed in the photoresist is improved, and hence, resolution characteristics are improved.
    Type: Grant
    Filed: July 2, 2004
    Date of Patent: March 3, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Tetsuya Yamada, Ritsuko Ueno, legal representative, Takashi Okagawa, Atsushi Ueno