Patents by Inventor Takashi Oonishi
Takashi Oonishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250044649Abstract: A light control sheet includes a first electrode sheet, a second electrode sheet, a light control layer, and an adherend layer. The first electrode sheet includes a first transparent substrate and a first transparent electrode layer. The second electrode sheet includes a second transparent substrate and a second transparent electrode layer. The light control layer is positioned between the first and second transparent electrode layers. The adherend layer is bonded to a surface of the first transparent substrate. The first transparent substrate has a substrate surface exposed from the adherend layer, the second transparent electrode layer has an electrode surface exposed from the first transparent substrate and the light control layer, and a sealing section is formed to cover the electrode surface, an end face of the light control layer, the substrate surface, and an end face of the adherend layer in an edge section of the light control sheet.Type: ApplicationFiled: October 23, 2024Publication date: February 6, 2025Applicant: TOPPAN HOLDINGS INC.Inventors: Ryuji SHIRAISHI, Takashi OONISHI
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Publication number: 20250035994Abstract: A light control sheet includes a first electrode sheet including a first transparent electrode layer, a second electrode sheet including a second transparent electrode layer, and a light control layer. The first sheet, second sheet, and control layer form a driver section in which the first sheet, second sheet, and control layer are overlaid, a first non-driver section in which the first sheet is exposed from the control layer and second sheet, and a second non-driver section in which the second sheet is exposed from the control layer and first sheet. The non-driver sections have a sealing section covering end face of the control layer. The first electrode layer includes a non-conductive section in the first non-driver section. The non-conductive section is not connected to a first driver portion in the driver section. The first non-driver section includes a disconnection section separating the non-conductive section from the first driver portion.Type: ApplicationFiled: October 14, 2024Publication date: January 30, 2025Applicant: TOPPAN HOLDINGS INC.Inventors: Ryuji SHIRAISHI, Takashi OONISHI
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Patent number: 12140840Abstract: A light control sheet includes transparent electrode layers including first and second transparent electrode layers, a light control layer formed between the first and second transparent electrode layers, a first transparent support layer formed on the first transparent electrode layer on the opposite side of the light control layer, and a second transparent support layer formed on the second transparent electrode layer on the opposite side of the light control layer. The first transparent support layer has a support surface supporting the first transparent electrode layer, and the first transparent electrode layer includes a first electrode element and a second electrode element such that the first and second electrode elements are formed along the support surface and electrically insulated from each other by a groove extending along the support surface and having a depth passing through the first transparent electrode layer and not passing through the first transparent support layer.Type: GrantFiled: May 16, 2023Date of Patent: November 12, 2024Assignee: TOPPAN Inc.Inventors: Tatsuya Yamamoto, Takashi Oonishi
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Publication number: 20230280621Abstract: A light control sheet includes transparent electrode layers including first and second transparent electrode layers, a light control layer formed between the first and second transparent electrode layers, a first transparent support layer formed on the first transparent electrode layer on the opposite side of the light control layer, and a second transparent support layer formed on the second transparent electrode layer on the opposite side of the light control layer. The first transparent support layer has a support surface supporting the first transparent electrode layer, and the first transparent electrode layer includes a first electrode element and a second electrode element such that the first and second electrode elements are formed along the support surface and electrically insulated from each other by a groove extending along the support surface and having a depth passing through the first transparent electrode layer and not passing through the first transparent support layer.Type: ApplicationFiled: May 16, 2023Publication date: September 7, 2023Applicant: TOPPAN Inc.Inventors: Tatsuya YAMAMOTO, Takashi OONISHI
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Patent number: 7014722Abstract: In finifsh-cogging a high-purity titanium material into a cylindrical form as the final shape, if cylindrical cogging is performed in all stages of warm forging or if cylindrical cogging is performed in the initial stage of the warm forging, there is no need of peripherally restricting the cylindrical cogging material, so that even if longitudinal upset-forging is effected with an upsetting ratio of 2, the condition that the major diameter/minor diameter ratio of the section after forging is not more than 1.01 can be satisfied, developing superior upset-forgeability. This makes it possible, in producing disk-like targets for sputtering, to minimize cutting loss produced during the rolling and machining and to maximize the yield of products; therefore, the material can be widely used as a semiconductor material for electrodes and the like using a high-purity titanium material.Type: GrantFiled: August 10, 2000Date of Patent: March 21, 2006Assignee: Sumitomo Titanium CorporationInventors: Nobuhiro Arimoto, Tadashi Ogasawara, Isao Uemura, Youji Mitani, Takashi Oonishi
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Patent number: 6033542Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.Type: GrantFiled: December 19, 1995Date of Patent: March 7, 2000Assignee: Kabushiki Kaisha Kobe Seiko ShoInventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi
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Patent number: 5514909Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.Type: GrantFiled: July 27, 1994Date of Patent: May 7, 1996Assignee: Kabushiki Kaisha Kobe Seiko ShoInventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi
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Patent number: RE43590Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.Type: GrantFiled: May 9, 2006Date of Patent: August 21, 2012Assignee: Kobelco Research Institute, Inc.Inventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi
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Patent number: RE44239Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.Type: GrantFiled: May 9, 2006Date of Patent: May 28, 2013Assignee: Kobelco Research Institute, Inc.Inventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi