Abstract: A connection substrate 13 includes a base material 130 formed by stacking a plurality of dielectric layers 130a to 130f and a plurality of through conductors 20 provided penetrating through the dielectric layers 130c to 130f adjacent to each other. A plurality of radiation shielding films 21a to 23a formed integrally with each of the plurality of through conductors 20 and separated from each other are provided at two or more interlayer parts in the dielectric layers 130c to 130f. A region PR1 of the radiation shielding film 21a (21b) formed integrally with one through conductor 20 in one interlayer part projected onto a virtual plane normal to a predetermined direction and a region of the radiation shielding film 22b or 22c (22c) formed integrally with another through conductor 20 in another interlayer part projected onto the virtual plane do not overlap each other.

Abstract: A radiation detector module 10A includes a scintillator for converting radiation made incident from a predetermined direction to light, a two-dimensional PD array 12 for receiving light from the scintillator, a connection substrate 13 formed by stacking dielectric layers 130a to 130f, and mounted with the two-dimensional PD array 12 on one substrate surface thereof, and an integrated circuit device 14 mounted on the other substrate surface of the connection substrate 13, and for reading out electrical signals output from the two-dimensional PD array 12. The integrated circuit device 14 has a plurality of unit circuit regions 14b separated from each other. The connection substrate 13 has a plurality of through conductors 20 and a plurality of radiation shielding films 21a to 23a formed integrally with each of the plurality of through conductors 20 and separated from each other. Accordingly, the readout circuits of the integrated circuit device can be protected from radiation with a simple configuration.

Abstract: A connection substrate 13 includes a base material 130 formed by stacking a plurality of dielectric layers 130a to 130f and a plurality of through conductors 20 provided penetrating through the dielectric layers 130c to 130f adjacent to each other. A plurality of radiation shielding films 21 a to 23 a formed integrally with each of the plurality of through conductors 20 and separated from each other are provided at two or more interlayer parts in the dielectric layers 130c to 130f. A region PR1 of the radiation shielding film 21a (21b) formed integrally with one through conductor 20 in one interlayer part projected onto a virtual plane normal to a predetermined direction and a region of the radiation shielding film 22b or 22c (22c) formed integrally with another through conductor 20 in another interlayer part projected onto the virtual plane do not overlap each other.

Abstract: A radiation detector module 10A includes a scintillator for converting radiation made incident from a predetermined direction to light, a two-dimensional PD array 12 for receiving light from the scintillator, a connection substrate 13 formed by stacking dielectric layers 130a to 130f, and mounted with the two-dimensional PD array 12 on one substrate surface thereof, and an integrated circuit device 14 mounted on the other substrate surface of the connection substrate 13, and for reading out electrical signals output from the two-dimensional PD array 12. The integrated circuit device 14 has a plurality of unit circuit regions 14b separated from each other. The connection substrate 13 has a plurality of through conductors 20 and a plurality of radiation shielding films 21a to 23a formed integrally with each of the plurality of through conductors 20 and separated from each other. Accordingly, the readout circuits of the integrated circuit device can be protected from radiation with a simple configuration.

Abstract: A solid-state imaging device 1 according to an embodiment of the present invention, in a solid-state imaging device for which M pixel units P(1) to P(16) for performing photoelectrical conversion are arrayed, includes N holding units H(1) to H(4) (N is smaller than M) that sequentially hold output signals from different pixel units out of the M pixel units P(1) to P(16), and an amplifying section 30 that sequentially amplifies output signals from the N holding units H(1) to H(4).