Patents by Inventor Takashi Toyonaka

Takashi Toyonaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11476382
    Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: October 18, 2022
    Assignee: Lumentum Japan, Inc.
    Inventors: Takashi Toyonaka, Hiroshi Hamada, Shigehisa Tanaka
  • Publication number: 20220238745
    Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.
    Type: Application
    Filed: June 29, 2021
    Publication date: July 28, 2022
    Inventors: Takashi TOYONAKA, Hiroshi HAMADA, Shigehisa TANAKA
  • Patent number: 11194105
    Abstract: A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: December 7, 2021
    Assignee: Lumentum Japan, Inc.
    Inventors: Hiroshi Hamada, Takashi Toyonaka
  • Patent number: 10978605
    Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: April 13, 2021
    Assignee: Lumentum Japan, Inc.
    Inventors: Takashi Toyonaka, Hiroshi Hamada, Shigehisa Tanaka
  • Publication number: 20200278507
    Abstract: A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.
    Type: Application
    Filed: February 25, 2020
    Publication date: September 3, 2020
    Inventors: Hiroshi HAMADA, Takashi TOYONAKA
  • Publication number: 20190280147
    Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.
    Type: Application
    Filed: March 8, 2019
    Publication date: September 12, 2019
    Inventors: Takashi TOYONAKA, Hiroshi HAMADA, Shigehisa TANAKA
  • Patent number: 10393972
    Abstract: The optical subassembly includes a photodetector including element terminal groups for light-receiving elements, and an electric signal controller including IC terminal groups, wherein any one of the element terminal group and the IC terminal group has a two-terminal configuration, and the other one has a three-terminal configuration, wherein, in a case where terminal groups at both ends where center positions thereof are disposed on the inner side together and have the two-terminal configuration, the first connection terminals are disposed on the outer side than a second connection terminals in the two-terminal configuration, and in a case where terminal groups at both ends where center positions thereof are on the outer side together and have the two-terminal configuration, a first connection terminal in the two-terminal configuration is disposed on the inner side than the second connection terminal.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: August 27, 2019
    Assignee: Lumentum Japan, Inc.
    Inventors: Takashi Toyonaka, Hiroshi Hamada
  • Patent number: 10204955
    Abstract: Provided is a back illuminated photo detector enabling easy determination of whether or not the radius of a beam spot on a light absorption layer is an appropriate size. The back illuminated photo detector includes: a semiconductor substrate having a first surface for receiving light; a semiconductor layer that is laminated on a second surface and includes a light absorption layer; a passivation film so as to expose a contact portion that is part of an upper surface of the semiconductor layer; and an electrode that is in contact with the semiconductor layer in the contact portion, and has a reflectance lower than that of the passivation film. The contact portion includes a center portion located on an optical axis, and an area of the center portion is smaller than a design cross-sectional area of a beam spot.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: February 12, 2019
    Assignee: Oclaro Japan, Inc.
    Inventors: Hiroshi Hamada, Takashi Toyonaka
  • Publication number: 20180088293
    Abstract: The optical subassembly includes a photodetector including element terminal groups for light-receiving elements, and an electric signal controller including IC terminal groups, wherein any one of the element terminal group and the IC terminal group has a two-terminal configuration, and the other one has a three-terminal configuration, wherein, in a case where terminal groups at both ends where center positions thereof are disposed on the inner side together and have the two-terminal configuration, the first connection terminals are disposed on the outer side than a second connection terminals in the two-terminal configuration, and in a case where terminal groups at both ends where center positions thereof are on the outer side together and have the two-terminal configuration, a first connection terminal in the two-terminal configuration is disposed on the inner side than the second connection terminal.
    Type: Application
    Filed: September 26, 2017
    Publication date: March 29, 2018
    Inventors: Takashi TOYONAKA, Hiroshi HAMADA
  • Publication number: 20170309658
    Abstract: Provided is aback illuminated photo detector enabling easy determination of whether or not the radius of a beam spot on a light absorption layer is an appropriate size. The back illuminated photo detector includes: a semiconductor substrate having a first surface for receiving light; a semiconductor layer that is laminated on a second surface and includes a light absorption layer; a passivation film so as to expose a contact portion that is part of an upper surface of the semiconductor layer; and an electrode that is in contact with the semiconductor layer in the contact portion, and has a reflectance lower than that of the passivation film. The contact portion includes a center portion located on an optical axis, and an area of the center portion is smaller than a design cross-sectional area of a beam spot.
    Type: Application
    Filed: April 21, 2017
    Publication date: October 26, 2017
    Inventors: Hiroshi HAMADA, Takashi TOYONAKA
  • Patent number: 9312965
    Abstract: An optical receiver module capable of increasing the range in which the error in distance between a collecting lens and a light receiving section is allowed is provided. In the optical receiver module according to the invention, the optical receiver includes a semiconductor substrate to which the light from the collecting lens is input, and through which the light passes, and a light receiving section disposed on a side (a reverse side) of the semiconductor substrate, the side being further from the collecting lens, and adapted to receive the light transmitted through the semiconductor substrate, and then convert the light into an electrical signal. On a side (an obverse side) of the semiconductor substrate, the side being nearer to the collecting lens, there is formed a lens surface adapted to converge light from the collecting lens toward the light receiving section.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: April 12, 2016
    Assignee: OCLARO JAPAN, INC.
    Inventors: Koki Iemura, Takashi Toyonaka, Hiroshi Hamada
  • Patent number: 9035407
    Abstract: Provided is a receiver module, including: a semiconductor light receiving element including an electrode; and a sub-mount including: an electrical wiring joined to the electrode with solder; and a trap region arranged around a joining surface of the electrical wiring, the trap region retaining solder by solder wetting.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: May 19, 2015
    Assignee: Oclaro Japan, Inc.
    Inventors: Hiroshi Hamada, Takashi Toyonaka
  • Patent number: 8907266
    Abstract: A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: December 9, 2014
    Assignee: Oclaro Japan, Inc.
    Inventors: Takashi Toyonaka, Takuma Ban, Hiroshi Hamada
  • Publication number: 20140133871
    Abstract: An optical receiver module capable of increasing the range in which the error in distance between a collecting lens and a light receiving section is allowed is provided. In the optical receiver module according to the invention, the optical receiver includes a semiconductor substrate to which the light from the collecting lens is input, and through which the light passes, and a light receiving section disposed on a side (a reverse side) of the semiconductor substrate, the side being further from the collecting lens, and adapted to receive the light transmitted through the semiconductor substrate, and then convert the light into an electrical signal. On a side (an obverse side) of the semiconductor substrate, the side being nearer to the collecting lens, there is formed a lens surface adapted to converge light from the collecting lens toward the light receiving section.
    Type: Application
    Filed: November 12, 2013
    Publication date: May 15, 2014
    Applicant: Oclaro Japan, Inc.
    Inventors: Koki IEMURA, Takashi TOYONAKA, Hiroshi HAMADA
  • Patent number: 8575714
    Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.
    Type: Grant
    Filed: April 13, 2011
    Date of Patent: November 5, 2013
    Assignee: Oclaro Japan, Inc.
    Inventors: Takashi Toyonaka, Hiroshi Hamada, Masataka Yokosawa
  • Publication number: 20120292731
    Abstract: A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.
    Type: Application
    Filed: May 7, 2012
    Publication date: November 22, 2012
    Applicant: OPNEXT JAPAN, INC.
    Inventors: Takashi TOYONAKA, Takuma BAN, Hiroshi HAMADA
  • Publication number: 20110286083
    Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.
    Type: Application
    Filed: April 13, 2011
    Publication date: November 24, 2011
    Applicant: OPNEXT JAPAN, INC.
    Inventors: Takashi TOYONAKA, Hiroshi HAMADA, Masataka YOKOSAWA
  • Patent number: 7875905
    Abstract: A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers.
    Type: Grant
    Filed: April 15, 2008
    Date of Patent: January 25, 2011
    Assignee: Opnext Japan, Inc.
    Inventors: Takashi Toyonaka, Hiroyuki Kamiyama, Kazuhiro Komatsu
  • Publication number: 20080265357
    Abstract: A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers.
    Type: Application
    Filed: April 15, 2008
    Publication date: October 30, 2008
    Inventors: Takashi Toyonaka, Hiroyuki Kamiyama, Kazuhiro Komatsu
  • Publication number: 20070249109
    Abstract: A high resistance re-grown layer is disposed around an optical device having a mesa structure. Thus, a mesa portion having a plane direction that appears in etching of a circular main structure is coated with the re-grown layer. Because of this coating, it is possible to reduce the capacitance in this portion as well as to avoid the risk of disconnection with respect to all the wiring directions. The thickness of the re-grown layer can be set to be equal to the thickness of the main structural part. Particularly, when a conductive substrate is used, a substantial reduction effect of parasitic capacitance can be expected from a combination with plural dielectric films.
    Type: Application
    Filed: April 20, 2007
    Publication date: October 25, 2007
    Inventors: Hiroyuki Kamiyama, Takashi Toyonaka