Abstract: In a method of manufacturing a silicon carbide semiconductor device, an n-type drift layer and a p-type epitaxial base layer are sequentially deposited onto an n-type silicon carbide substrate. Next, n-type source regions and a p-type base contact region are formed in the surface layer of the p-type epitaxial base layer. Then, laser annealing is performed by irradiating the surface layer of the n-type source regions and the surface layer of the p-type base contact region with a laser.

Abstract: The object of the present invention is to provide a technology that enables long-term preservation while maintaining the function of an organ or tissue for transplantation. A further object is utilizing this technology to provide a technology for suppressing tissue disorder accompanying warm ischemia and reperfusion as well as restoring an organ from a cardiac arrest donor to a level compatible for transplantation. A method that employs perfusion by a perfusate etc. is provided, comprising each of the following steps of: (a) connecting a perfusate instream cannula for streaming said perfusate into said “organ or tissue,” (b) connecting a perfusate outstream cannula for streaming said perfusate out from said “organ or tissue,” and (c) perfusing a perfusate comprising an oxygen carrier and a blood coagulation inhibitor into said organ or tissue.

Abstract: The ultrasonic sensor includes a wave transmitting and receiving device and a cover. The wave transmitting and receiving device has a front surface including a wave transmitting and receiving surface and is configured to transmit and receive an ultrasonic wave through the wave transmitting and receiving surface. The cover covers the wave transmitting and receiving device so as to expose the wave transmitting and receiving surface. The cover is constituted by multiple portions, and the multiple portions are individually made of multiple materials different from each other.

Abstract: The present invention relates to a dosing mechanism including: a body; and a pump unit (3) that is attached to the body, in which the pump unit (3) includes: a pump (31) in which a volume of a solution feeding part therein repeats expansion and shrinkage, thereby sucking a medicine from a medicine vessel and discharging the medicine to a patient; a suction-side pipe (333) that extends from the pump (31) toward the medicine vessel; a discharge-side pipe (343) that extends from the pump (31) toward the patient; a relief pipe (35, 35a) whose one end (351) is connected to the discharge-side pipe (343) while the other end (352) is located in a part whose pressure is lower than pressure inside the discharge-side pipe when the medicine is dosed; and a relief pipe on-off valve (36, 36a) that opens and closes the relief pipe (35, 35a), a use method of a dosing mechanism, and a pump unit for a dosing mechanism.

Abstract: The present invention relates to a dosing mechanism including: a body (2); and a disposable portion (3) that is removably attached to the body (2), in which the disposable portion (3) includes: a pump that sucks a medicine from a medicine vessel and discharges the medicine to a patient; a suction-side tube (33) that extends from the pump toward the medicine vessel; a discharge-side tube (34) that extends from the pump toward the patient; and a connector (331, 341) that is located at a front end of at least one of the suction-side tube (33) and the discharge-side tube (34), and the body (2) includes a sensor (24) in a position corresponding to the suction-side tube (33) or the discharge-side tube (34) attached to the body (2).

Abstract: A P+ type region, a p-type region, and a P? type region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an active region to make up an element structure of Schottky junction. The p? type region surrounds the P+ type region and the p-type region to form a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode and an electrode pad have end portions positioned on the P+ type region and the end portion of the Schottky electrode is exposed from the end portion of the electrode pad. As a result, the region of the breakdown voltage structure portion can be made smaller while the active region can be made larger, and a semiconductor device is easily fabricated.

Abstract: Process (A) of preparing a silicon carbide substrate of a first conductivity type; process (B) of forming an epitaxial layer of the first conductivity type on one principal surface of the silicon carbide substrate; process (C) of forming on another principal surface of the silicon carbide substrate, a first metal layer; process (D) of heat treating the silicon carbide substrate after the process (C) to form an ohmic junction between the first metal layer and the other principal surface of the silicon carbide substrate, and a layer of a substance (10) highly cohesive with another metal on the first metal layer; and a process (E) of removing impurities and cleaning a surface of the first metal layer (8) on the other principal surface of the silicon carbide substrate (D), are performed. The heat treatment at process (D) is executed at a temperature of 1,100 degrees C. or more.

Abstract: In a fabrication method of a silicon carbide semiconductor element including a drift layer playing a role of retaining a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode on a backside, dicing is added to form at least one dicing line in an element active region on a surface of the semiconductor substrate on a side opposite of the drift layer before forming the ohmic electrode on the backside of the semiconductor substrate. Thus, a silicon carbide semiconductor element and fabrication method thereof is provided such that even if the semiconductor substrate is made thinner to reduce the on-resistance, the strength of the substrate can be maintained and cracking of the wafer during wafer processing can be reduced.

Abstract: The ultrasonic-transducer mounting structure includes: a housing including: a body part which is formed into a hollow cylindrical shape and is provided at its front surface with a transmission surface allowing an ultrasonic wave to pass therethrough and is designed to accommodate an ultrasonic transducer therein; and plural connection pieces provided to a side surface of the body part; and a holder fixed to a rear surface of a bumper and designed to hold the housing such that the transmission surface of the housing is exposed via an opening of the bumper. The holder includes plural reception pieces to which the plural connection pieces are detachably coupled respectively. The plural reception pieces are fixed to the rear surface of the bumper to surround the opening.

Abstract: The ultrasonic sensor includes a wave transmitting and receiving device and a cover. The wave transmitting and receiving device has a front surface including a wave transmitting and receiving surface and is configured to transmit and receive an ultrasonic wave through the wave transmitting and receiving surface. The cover covers the wave transmitting and receiving device so as to expose the wave transmitting and receiving surface. The cover is constituted by multiple portions, and the multiple portions are individually made of multiple materials different from each other.

Abstract: A marker which is a reference of a coordinate position defining a region of a chip that is manufactured in a semiconductor substrate is formed. A crystal defect on the semiconductor substrate is detected. The coordinate position of the detected crystal defect is detected on the basis of the marker. Therefore, it is possible to detect the position of a semiconductor chip including the crystal defect among the semiconductor chips manufactured on the semiconductor substrate. As a result, it is possible to easily detect the position of the semiconductor device including the position of the crystal defect on the semiconductor substrate.

Abstract: P+ type regions and a p-type region are selectively disposed in a surface layer of a silicon carbide substrate base. The P+ type region is disposed in a breakdown voltage structure portion surrounding an active region. The P+ type region is disposed in the active region to make up a JBS structure. The p-type region surrounds the P+ type region to make up a junction termination (JTE) structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode overhangs an interlayer insulation film covering a portion of the P+ type region and the p-type region and this overhanging portion acts as a field plate. This enables the provision of a semiconductor device configured by using a wide band gap semiconductor capable of maintaining a high breakdown voltage with high reliability, and a method of fabricating thereof.

Abstract: A method for producing a regenerative hair follicle germ for transplantation, in which a color of hair that grows after transplantation is controlled, includes preparing a first cell mass containing mesenchymal cells; preparing a second cell mass containing epithelial cells; preparing a cell mass containing pigment stem cells; binding the cell mass containing the pigment stem cells to at least one among the first cell mass and the second cell mass, and closely contacting the first cell mass and the second cell mass, at least one of which has been bound to the cell mass containing the pigment stem cells, and culturing them within a support.

Abstract: An ultrasonic wave device includes a holding member designed to be fixed to an inner surface of a bumper as a vehicle outer panel, and a body block designed to be connected with the holding member. The body block includes a head designed to be inserted in an exposing hole provided at the bumper, and at least one abutting part designed to abut on the inner surface of the bumper at a position closer to the exposing hole than a position where the holding member is fixed. The body block is biased to an outer side of the bumper by a spring force of the clamping part, which is a biasing part provided with the holding member.

Abstract: A surface of a silicon carbide substrate on which a graphite layer is formed is covered with a metal layer which can form carbide. Then, the silicon carbide substrate is annealed to cause reaction between a metal in the metal layer which can form carbide and carbon in the graphite layer so as to change the graphite layer between the metal layer which can form carbide and the silicon carbide substrate to a metal carbide layer. Thus, the graphite layer is removed. The adhesion between the metal layer which can form carbide and the silicon carbide substrate can be improved so that separation of the metal layer which can form carbide can be suppressed. Graphite deposits can be suppressed due to the removal of the graphite layer so that separation of a wiring metal film formed on a surface of the metal layer which can form carbide can be suppressed.

Abstract: An Ni2Si layer and a TiC layer formed by sintering after deposition of a thin layer including Ni and a thin layer including Ti on a silicon carbide substrate have a structure in which the TiC layer is precipitated on a surface of the Ni2Si layer. A multilayer thin film including a Ti layer as a first thin film and an Ni layer as a second thin film is formed on the TiC layer surface in the structure. A TiC-derived C composition ratio is set to 15% or more at an interface between the TiC layer and the Ti layer of the multilayer thin film. As a result, a silicon carbide semiconductor element can be provided without occurrence of peeling after wafer dicing and subsequent picking up by a dicing tape.

Abstract: A (000-1) C-plane of an n? type silicon carbide substrate having an off-angle ? in a <11-20> direction is defined as a principal plane, and a periphery of a portion of this principal surface layer defined as an alignment mark is selectively removed to leave the convex-shaped alignment mark. The alignment mark has a cross-like plane shape such that two rectangles having longitudinal dimensions tilted by 45 degrees relative to the <11-20> direction are orthogonal to each other. When a film thickness of a p? type epitaxial layer is Y; a width of the alignment mark parallel to the principal surface of the n? type silicon carbide substrate is X; and an off-angle of the n? type silicon carbide substrate is ?, an epitaxial layer is formed on an upper surface of the alignment mark such that Y?X·tan ? is satisfied.

Abstract: A silicon carbide epitaxial layer formed by a low concentration wide band gap semiconductor of a first conductivity type is formed on the surface of a silicon carbide substrate formed by a high concentration wide band gap semiconductor of the first conductivity type. A Schottky electrode is formed on the silicon carbide epitaxial layer. The interface between the Schottky electrode and the silicon carbide epitaxial layer is used as a Schottky interface. Plural impurity regions of a second conductivity type are disposed at predetermined intervals in a lateral direction, in the silicon carbide epitaxial layer, at a position in the lower portion of the Schottky electrode in the depth direction. Because of the shape of the impurity regions, any leak current can be suppressed without raising the ON-resistance.

Abstract: The object of the present invention is to provide a method for manufacturing multiple teeth from one isolated tooth germ in order to increase the absolute number of tooth germs that can be employed for transplantation. The present invention relates to a method for manufacturing a tooth. More specifically, the present invention provides a method for manufacturing multiple teeth from one isolated tooth germ comprising the epithelial and mesenchymal tissue layers characterized in that it comprises the steps of: (a) completely or partially splitting one isolated tooth germ comprising the epithelial and mesenchymal tissue layers, wherein said splitting is characterized in splitting so that each splitted tooth germ portion respectively comprises a portion of said epithelial tissue layer and a portion of said mesenchymal tissue layer, and (b) culturing said splitted tooth germs in vitro or culturing in vivo in a living animal other than humans to form multiple teeth.

Abstract: The object of the present invention is to provide a technology that enables long-term preservation while maintaining the function of an organ or tissue for transplantation. A further object is utilizing this technology to provide a technology for suppressing tissue disorder accompanying warm ischemia and reperfusion as well as restoring an organ from a cardiac arrest donor to a level compatible for transplantation. A long-term maintenance method of a mammalian organ or tissue for transplantation that employs perfusion by a perfusate etc. is provided, comprising each of the following steps of: (a) connecting a perfusate instream cannula for streaming said perfusate into said “organ or tissue,” (b) connecting a perfusate outstream cannula for streaming said perfusate out from said “organ or tissue,” and (c) perfusing a perfusate comprising an oxygen carrier and a blood coagulation inhibitor into said organ or tissue.