Abstract: A radio-frequency module includes a module substrate having major surfaces; a module substrate having major surfaces, the major surface being disposed facing the major surface; and plural electronic components disposed between the major surfaces, on the major surface, and on the major surface. The plural electronic components include: a first electronic component including the power amplifier; a second electronic component including a low-noise amplifier; a switch that switches connection and disconnection between a first filter and the power amplifier; and a third electronic component including a PA controller to control the power amplifier or a switch controller to control the switch. The first to third electronic components are separately disposed on the major surface, between the major surfaces, and on the major surface.

Abstract: A fuel cell system includes a fuel cell stack including a plurality of single cells stacked, a dry-wet detection unit that detects a dry-wet state of the fuel cell stack, and an operation control unit that controls operation of the fuel cell stack. When an operating condition under which the fuel cell stack is at a high temperature and at a high load is established, the dry-wet detection unit determines whether the fuel cell stack is in a deviation state of deviating from an ideal dry-wet state based on a physical quantity having a higher correlation with drying and wetting of the fuel cell stack than the temperature of the fuel cell stack. When the deviation state is detected, the operation control unit performs a reset operation for recovering the dry-wet state.

Abstract: There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.

Abstract: An image display system causes a plurality of image display devices having different device characteristics to respectively display images. The image display system includes an external light detection device that detects external light and an image adjustment device that performs adjustment to make at least one of contrast, chromaticity, and luminance continuous between the images displayed on the plurality of image display devices, the adjustment being performed based on the device characteristics and the detected external light.

Abstract: There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.

Abstract: A battery system cools a battery device by supplying a coolant to the battery device. The battery system includes a coolant flow path through which the coolant circulates, a coolant pump to control a flow of the coolant passing through the coolant flow path to circulate the coolant between the battery device and the coolant flow path, a differential pressure sensor to detect a differential pressure between a pressure of the coolant passing through a coolant supply port from the coolant flow path to the battery device and a pressure of the coolant passing through a coolant discharge port from the battery device to the coolant flow path, and a controller to determine whether there is a leakage of the coolant based on a comparison between the differential pressure acquired from the differential pressure sensor and an estimated value stored in advance.

Abstract: A method of forming a metal magnetic film includes forming the metal magnetic film by a plating process, wherein the metal magnetic film comprises a permalloy and carbon atoms and a content of the carbon atoms is 0.3 to 3.0 at % based on a total amount of the carbon atoms and metal elements.

Abstract: An optical module is provided with a columnar protrusion over the entire pickup area (EP) for automatic suction by a mounting device at the center of the upper surface of a fiber holding carrier. The protrusion secures a dedicated pickup area (EP1) on a top surface. When an extra length of an optical fiber extending from an optical device is routed and held between a pair of wall portions, the extra length including a tip portion is held in a storage area of the fiber holding carrier by a restoring force caused by being pressed against the wall portions. In this holding state, since the tip portion of the extra length can be disposed along the outer periphery of the protrusion, even in a case where the position where the optical fiber is held is slightly shifted by a shock from outside.

Abstract: There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.

Abstract: There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.

Abstract: In a radio-frequency module, a conductive layer covers a major surface opposite to the mounting board side of a resin layer and a major surface opposite to the mounting board side of an electronic component. The electronic component includes an electronic component body and a plurality of outer electrodes. The electronic component body includes an electrical insulating portion and a conductive portion provided inside the electrical insulating portion, forming at least a portion of a circuit element of the electronic component. The electronic component body has a third major surface and a fourth major surface opposite to each other, and an outer side surface. The third major surface forms the major surface of the electronic component, and the third major surface is in contact with the conductive layer. The plurality of outer electrodes are provided on the fourth major surface, but are not extended over the third major surface.

Abstract: One aspect of the present invention is a optical main signal processing node apparatus including: an input port for inputting an optical multiplexed with signals pertaining to a plurality of services from an optical transmission path; an output port for outputting an optical signal multiplexed with signals pertaining to a plurality of services to an optical transmission path; a optical main signal processer configured to perform optical main signal processing on an optical signal input from the input port; and a path switch configured to switch a path of the optical signal input from the input port to one of a first path for guiding the optical signal to the output port and a second path for guiding the optical signal to the optical main signal processer.

Abstract: There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.

Abstract: An optical wireless communication system (1) for wirelessly transmitting a signal beam (L) between optical communication units (2) and (3) located at two points apart from each other includes an aiming mechanism (4) that is provided in each of the optical communication units (2) and (3) located at the two points and has an aiming line (S), which is parallel to an optical axis (O) and has a predetermined interval from the optical axis (O), with the optical axis (O) of the signal beam (L) of each of the optical communication units (2) and (3) located at the two points aligned in a straight line, and a first front sight that is provided in each of the optical communication units (2) and (3) and provided at a position that is off the optical axis (O) and the aiming line (S) and has a predetermined interval from the optical axis (O) and a predetermined interval from the aiming line (S).

Abstract: An image forming apparatus includes: an image former that forms an image on a continuous paper; a fixing unit that includes a pair of rotatable members and that nips the continuous paper between the rotatable members to convey the paper and fix the image formed on the paper by the image former; a conveying member different from the rotatable members; and a hardware processor. The image forming apparatus performs a paper conveying mode in which the image former does not form an image and at least the conveying member conveys the continuous paper. In the paper conveying mode, the hardware processor determines to press the rotatable members against each other or to separate the rotatable members from each other according to a predetermined criterion and, based on the determination, conveys the continuous paper while keeping the rotatable members pressed against each other or separated from each other.

Abstract: There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.

Abstract: There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.

Abstract: A noise suppression sheet comprises a pair of metal magnetic layers and a non-magnetic metal layer interposed between the pair of metal magnetic layers, and can achieve high magnetic shield characteristics on both surfaces.

Abstract: A three-way catalyst article, and its use in an exhaust system for internal combustion engines, is disclosed. The catalyst article for treating exhaust gas comprising: a substrate comprising an inlet end and an outlet end with an axial length L; a first catalytic region comprising a first platinum group metal (PGM) component and a first oxygen storage capacity (OSC) material, wherein the first OSC material has a fresh specific surface area (SSA) of at least 10 m2/g; and wherein the first OSC material has an SSA difference of no more than 30 m2/g between the fresh first OSC material and the aged first OSC material.

Abstract: A terminal function device and a proxy transfer agent device generate, on mutually-connecting physical lines, logical paths to be correlated with physical port transmitting/receiving units. In a case of receiving a signal received at one of the physical port transmitting/receiving units, the terminal function device sends the signal out to a logical path corresponding to the physical port transmitting/receiving unit that received this signal. In a case of receiving a signal through the logical path, the proxy transfer agent device correlates the signal with information identifying the physical port transmitting/receiving unit corresponding to the logical path that received this signal, and transfers the information along with the signal. Ina case of sending out a signal to the logical path, the proxy transfer agent device sends out the signal to the logical path corresponding to the physical port transmitting/receiving unit specified as a transfer destination of the signal.