Abstract: According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. The semiconductor layer is sandwiched between the first and second electrodes. The first layer is provided between the second electrode and the semiconductor layer and contains an element included in the semiconductor layer and at least one of Ag, Ni, and Co.

Abstract: A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2 ? AB < L 0 ? 6.7 .

Abstract: According to one embodiment, there are provided a first electrode, a second electrode containing a 1B group element having an Al element added thereto, and a variable resistive layer disposed between the first electrode and the second electrode and having a silicon element.

Abstract: According to one embodiment, a memory device includes a first electrode including a crystallized SixGe1-x layer (0?x<1), a second electrode including a metal element, a variable resistance part between the first and second electrode, the part including an amorphous Si layer, and a control circuit controlling a filament in the amorphous Si layer, the filament including the metal element.

Abstract: A liquid crystal display device which includes a backlight device provided with an LED, and a color filter having colored layers of plural colors including a green layer, wherein the green layer of the color filter contains brominated zinc phthalocyanine green pigment and a dielectric loss tangent of the green layer at a driving frequency of a liquid crystal display device is confined to not more than 0.02.

Abstract: According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.

Abstract: Disclosed is a dye-containing blue color composition for color filter, including a triarylmethane-based dye having a structure represented by the following formula (1): wherein R1, R2, R3, R4, R5 and R6 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may have a substituent, a phenyl group which may have a substituent or a benzyl group which may have a substituent, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19 and R20 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may have a substituent or a halogen atom and X represents a tristrifluoromethanesulfonylmethide anion.

Abstract: There is provided an output circuit for supplying an output current to a load coupled to an output terminal in response to an input signal. The output circuit includes an output transistor for supplying the output current to the output terminal, an output-drive circuit for driving the output transistor, a constant-current limiting circuit for generating a current control signal for limiting the output current to a predetermined current value, and a control circuit for implementing a control such that the output current is controlled on the basis of the current control signal if a voltage at the output terminal is at a predetermined voltage, or less after the input signal is supplied while the output transistor is driven by the output-drive circuit if the voltage at the output terminal is in excess of the predetermined voltage.

Abstract: An opening-closing mechanism for a record medium is arranged to include a moving body moves, on which an inserting slot and a revolving door are provided; a supporting means for causing the revolving door to support by the moving body in openable and closeable manner in the form of opening in; a movement transmission means for enabling an opening and closing operation of the revolving door on condition of the movement of the moving body; and a concave space movably receives therein the moving body.

Abstract: A guide lug 3, lateral side temporarily fixing claws 4a, and slit side temporarily fixing claws 4b are hooked on a flat-cable insertion opening opened in a sheet metal casing to thereby temporarily fix a lid 1 with the lid half-opened. When the lid 1 in a half-opened state is adapted as a guide, a flat cable is inserted into a slit 5 from the inside of the casing and pulled out to the outside of the casing. The pulled out flat cable is pinched between a flange 8 of the lid 1 and the peripheral face of the flat-cable insertion opening to be screwed.

Abstract: Continuous annealing equipment contains: a heating zone, a soaking zone, and a rapid cooling zone, the rapid cooling zone having gas jet cooling equipment and is provided with at least one pair of seal rolls at each of an inlet and an outlet thereof and bridle roll units each composed of two or more bridle rolls in front of and behind itself; the bridle roll unit behind the rapid cooling zone having two or more heating rolls each having an induction heater thereinside; and the heating roll having a winding angle of 100° or more per heating roll and 380° or more in total of all the heating rolls.

Abstract: A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.

Abstract: Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate electrode are formed on a semiconductor substrate. A first metal is deposited substrate, and a metal semiconductor compound layer is formed on the surface of the semiconductor substrate by making the first metal and the semiconductor substrate react each other by a first heat treatment. Ions having a mass equal to or larger than atomic weight of Si are implanted into the metal semiconductor compound layer. A second metal is deposited on the metal semiconductor compound layer. An interface layer is formed by making the second metal segregated at an interface between the metal semiconductor compound layer and the semiconductor substrate by diffusing the second metal through the metal semiconductor compound layer by a second heat treatment.

Abstract: It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSi2 layer through annealing; forming a Ni layer on the NiSi2 layer; and silicidating the NiSi2 layer through annealing.

Abstract: A direct type fuel cell power generator comprises an anode electrode including an anode catalyst layer, a cathode electrode including a cathode catalyst layer, a fuel container comprising at least two electromotive portion units, each of which comprises an electrolyte film disposed between the anode electrode and the cathode electrode, the fuel container housing a fuel therein, and a fuel flow path to supply a fuel in the electromotive portion unit. In the power generator, the fuel flow path has a flow path which produces flow-back again from the fuel container to the first electromotive portion unit via the first electromotive portion unit and the second electromotive portion unit, and which is not branched during the flow-back.

Abstract: An exemplary embodiment of the present invention is a drive circuit for controlling an output voltage of display data supplied to a liquid crystal display panel includes a hold circuit that holds a gradient of the display data, a bit detection circuit that compares the gradient of the display data with a last gradient held in the hold circuit to thereby detect a comparison result, a current capability selection circuit that selects any of a plurality of current capabilities in synchronization with a bit comparison signal based on the detected comparison result, and an output circuit that converts the display data into a voltage according to the gradient thereof using the selected current capability and outputs the converted voltage.

Abstract: Disclosed is a dye-containing blue color composition for color filter, including a triarylmethane-based dye having a structure represented by the following formula (1): wherein R1, R2, R3, R4, R5 and R6 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may have a substituent, a phenyl group which may have a substituent or a benzyl group which may have a substituent, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19 and R20 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may have a substituent or a halogen atom and X represents a tristrifluoromethanesulfonylmethide anion.

Abstract: A liquid crystal display device which includes a backlight device provided with an LED, and a color filter having colored layers of plural colors including a green layer, wherein the green layer of the color filter contains brominated zinc phthalocyanine green pigment and a dielectric loss tangent of the green layer at a driving frequency of a liquid crystal display device is confined to not more than 0.02.

Abstract: A metal insulator semiconductor field effect transistor (MISFET) having a strained channel region is disclosed. Also disclosed is a method of fabricating a semiconductor device having a low-resistance junction interface. This fabrication method includes the step of forming a gate electrode above a silicon substrate with a gate insulator film being sandwiched therebetween. Then, form a pair of heavily-doped p (p+) type diffusion layers in or on the substrate surface at both sides of the gate electrode to a concentration of 5×1019 atoms/cm3 or more and yet less than or equal to 1×1021 atoms/cm3. Next, silicidize the p+-type layers by reaction with a metal in the state that each layer is applied a compressive strain.

Abstract: The invention provides a method for inspecting a fuel cell that can simply inspect fuel cell characteristics. The method is an inspecting method for a direct methanol fuel cell generator comprising an anode electrode including an node catalyst layer, a cathode electrode including a cathode catalyst layer, and N pieces of cells having an electrolyte disposed between the anode electrode and the cathode electrode, for power generation by feeding an aqueous methanol solution to the anode electrode and an oxidant gas to the cathode electrode. The fuel cell generator is inspected by measuring voltage changes of the voltage V of one electromotive unit caused by generating a current density change ?I or ??I (mA/cm2) satisfying the condition of 0.2??I?5 in a finite current density I (mA/cm2) loaded on the plural electromotive units arbitrarily connected in series in the fuel cell generator under power generation during a time interval ?t (sec) satisfying the condition of 10?5??t?0.5.