Patents by Inventor Takatsugu Omata

Takatsugu Omata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210159345
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: February 4, 2021
    Publication date: May 27, 2021
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Patent number: 10916663
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: February 9, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Publication number: 20180308989
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: June 28, 2018
    Publication date: October 25, 2018
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Patent number: 10103277
    Abstract: A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: October 16, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Publication number: 20170309754
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: July 13, 2017
    Publication date: October 26, 2017
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Patent number: 9711655
    Abstract: A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.
    Type: Grant
    Filed: April 25, 2016
    Date of Patent: July 18, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Patent number: 9490351
    Abstract: An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: November 8, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka
  • Publication number: 20160240694
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: April 25, 2016
    Publication date: August 18, 2016
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Patent number: 9331208
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: May 3, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Publication number: 20150179805
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: March 2, 2015
    Publication date: June 25, 2015
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Publication number: 20150179777
    Abstract: An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.
    Type: Application
    Filed: March 10, 2015
    Publication date: June 25, 2015
    Inventors: Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA
  • Patent number: 9054205
    Abstract: A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: June 9, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yusuke Nonaka, Takatsugu Omata, Tatsuya Honda, Akiharu Miyanaga, Hiroki Ohara
  • Patent number: 8994021
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: March 31, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Patent number: 8985173
    Abstract: It is an object to provide a homogeneous semiconductor substrate in which defective bonding is reduced. Such a semiconductor substrate can be formed by the steps of: disposing a first substrate in a substrate bonding chamber which includes a substrate supporting base where a plurality of openings is provided, substrate supporting mechanisms provided in the plurality of openings, and raising and lowering mechanisms which raise and lower the substrate supporting mechanisms; disposing a second substrate over the first substrate so as not to be in contact with the first substrate; and bonding the first substrate to the second substrate by using the raising and lowering mechanisms to raise the substrate supporting mechanisms.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: March 24, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takatsugu Omata, Tomoaki Moriwaka, Hideto Ohnuma
  • Patent number: 8987728
    Abstract: An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: March 24, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka
  • Patent number: 8900362
    Abstract: A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: December 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka
  • Publication number: 20140183532
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
    Type: Application
    Filed: March 6, 2014
    Publication date: July 3, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Patent number: 8703531
    Abstract: An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: April 22, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka
  • Patent number: 8680522
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 25, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Patent number: 8669556
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: March 11, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga