Abstract: To reduce radiation noise generated when a semiconductor device in a power unit performs switching, a core is provided outside the power unit. The closer the core is disposed to the semiconductor device that is generating the radiation noise, the greater the effect of reducing the radiation noise is obtained. However, since there has been no space to provide the core inside the power unit, there has been a limitation in the reduction of radiation noise. The invention provides a power unit including a core in the interior thereof. In order to install a first core inside the power unit, a first output-side conductor bar, a second output-side conductor bar, and a third output-side conductor bar are connected to an output of an inverter include a first bundle portion. The first bundle portion passes through a first penetrating opening of the first core provided inside the power unit.

Abstract: A power conversion apparatus includes a main capacitor to store therein DC power, and an inverter circuit to convert the DC power stored in the main capacitor to AC power. The main capacitor and a power semiconductor element that constitutes the inverter circuit are connected to each other by a P-side common wire through which a switching current flows. A switching-current shunt component is connected in parallel to the P-side common wire.

Abstract: In a power converter including at least one bridge circuit configured to have upper and lower arms in which a first power semiconductor device and a second power semiconductor device are connected in series, a first gate driving circuit that supplies a charge to the first power semiconductor device of an upper arm to drive the first power semiconductor device monitors a voltage developed by an output inductor between a connection end between the first power semiconductor device and the second power semiconductor device and a load, and performs control to protect the first power semiconductor device based on a value of the monitored voltage.

Abstract: First to sixth switching elements forming a power conversion circuit for one phase in a three-level power converting apparatus include transistor elements and diode elements connected in reverse parallel to the transistor elements. Second, third, fifth, and sixth transistor elements are configured by MOSFETs that enable an electric current to flow in two directions.

Abstract: A driving circuit including: a voltage detector that detects the sum voltage of a positive bias voltage and a negative bias voltage, the negative bias voltage or the positive bias voltage; and a switching element that is connected to the control terminal of a power element and the negative side of a negative-voltage power supply; wherein, when the value of the detection target voltage becomes lower than a voltage setting value or when a voltage between the control terminal and the reference terminal in the power element increases in a state where the value of the detection target voltage is lower than the voltage setting value, the voltage detector turns on the switching element to thereby supply, between the above terminals in the power element, a voltage of 0V or lower.

Abstract: In a power converter including at least one bridge circuit configured to have upper and lower arms in which a first power semiconductor device and a second power semiconductor device are connected in series, a first gate driving circuit that supplies a charge to the first power semiconductor device of an upper arm to drive the first power semiconductor device monitors a voltage developed by an output inductor between a connection end between the first power semiconductor device and the second power semiconductor device and a load, and performs control to protect the first power semiconductor device based on a value of the monitored voltage.

Abstract: To reduce radiation noise generated when a semiconductor device in a power unit performs switching, a core is provided outside the power unit. The closer the core is disposed to the semiconductor device that is generating the radiation noise, the greater the effect of reducing the radiation noise is obtained. However, since there has been no space to provide the core inside the power unit, there has been a limitation in the reduction of radiation noise. The invention provides a power unit including a core in the interior thereof. In order to install a first core inside the power unit, a first output-side conductor bar, a second output-side conductor bar, and a third output-side conductor bar are connected to an output of an inverter include a first bundle portion. The first bundle portion passes through a first penetrating opening of the first core provided inside the power unit.

Abstract: A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.

Abstract: A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

Abstract: First to sixth switching elements forming a power conversion circuit for one phase in a three-level power converting apparatus include transistor elements and diode elements connected in reverse parallel to the transistor elements. Second, third, fifth, and sixth transistor elements are configured by MOSFETs that enable an electric current to flow in two directions.

Abstract: A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.

Abstract: A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.