Abstract: The present invention is a resist underlayer film material, including: (A) a compound or resin having a phenolic hydroxy group; (B) a base generator; and (C) an organic solvent. By the above configuration, the present invention provides: a resist underlayer film material that can form a resist underlayer film having excellent planarizing ability and film formability even on a substrate to be processed having a portion with particular difficulty in planarization, such as a wide trench structure, and that yields a resist underlayer film having an appropriate etching characteristic in a fine patterning process with a multilayer resist method in a semiconductor apparatus manufacturing process; and a patterning process and method for forming a resist underlayer film using the above material.

Abstract: The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10, and R1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point.

Abstract: The present invention provides a material for forming an organic film, containing a compound shown by the following general formula (1), and an organic solvent, where X represents an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 represents an integer of 1 to 10, and R1 represents at least one or more of the following general formulae (2) to (4). This aims to provide an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

Abstract: A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR1 and AR2 represent a benzene ring or naphthalene ring optionally with a substituent; W1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W1; W2 represents a divalent organic group having 1 to 80 carbon atoms; R1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.

Abstract: A material for forming an adhesive film used for an adhesive film formed directly under a resist upper layer film, contains: (A) a resin having at least one structural unit containing a fluorine-substituted organic sulfonyl anion structure and having at least one structural unit shown by the following general formula (2) besides the structural unit containing the fluorine-substituted organic sulfonyl anion structure; (B) a thermal acid generator; and (C) an organic solvent. The material forms an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and also makes it possible to form an excellent pattern profile. A patterning process uses the material. A method forms the adhesive film.

Abstract: A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) or (1B), and an organic solvent, where Ar1 and Ar2 represent a benzene ring or naphthalene ring which optionally have a substituent; X represents a single bond or methylene group; a broken line represents a bonding arm; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and W1 represents a hydroxyl group, an alkyloxy group having 1 to 10 carbon atoms, or an organic group having at least one aromatic ring optionally having a substituent. A composition for forming an organic film, the composition containing a polymer with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film.

Abstract: A material for forming an adhesive film formed between a silicon-containing middle layer and a resist upper layer film, containing: (A) a resin having structural units shown by formula (1) and formula (2); (B) a thermal acid generator; and (C) an organic solvent, in the component (A), the structural unit shown by formula (1) having a molar fraction of 5% or more and the structural unit shown by formula (2) having a molar fraction of 30% or more. An objective is to provide a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and also makes it possible to form an excellent pattern profile; a patterning process using the material.

Abstract: The present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. This provides: a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and that also makes it possible to form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.

Abstract: A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of “n” having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70?a?0.99 and 0.01?b?0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH2)p—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH2)r—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

Abstract: The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10, and R1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point.

Abstract: The present invention provides a. coating-type composition for forming an. organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene rive or a naphthalene ring optionally having a substituent, and W1 represents an aryl croup having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can. form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.

Abstract: The present invention provides a material for forming an organic film, containing a compound shown by the following general formula (1), and an organic solvent. In the formula (1), X represents an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 represents an integer of 2 to 10, R1 represents at least one or more of the following formulae (2) to (4), where l1 represents 0 or 1, and l2 represents 0 or 1. Thus, provided is an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

Abstract: The present invention provides a material for forming an organic film, containing a compound shown by the following general formula (1), and an organic solvent, where X represents an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 represents an integer of 1 to 10, and R1 represents at least one or more of the following general formulae (2) to (4). This aims to provide an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

Abstract: A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material.

Abstract: A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR1 and AR2 represent a benzene ring or naphthalene ring optionally with a substituent; W1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W1; W2 represents a divalent organic group having 1 to 80 carbon atoms; R1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) or (1B), and an organic solvent, where Ar1 and Ar2 represent a benzene ring or naphthalene ring which optionally have a substituent; X represents a single bond or methylene group; a broken line represents a bonding arm; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and W1 represents a hydroxyl group, an alkyloxy group having 1 to 10 carbon atoms, or an organic group having at least one aromatic ring optionally having a substituent. A composition for forming an organic film, the composition containing a polymer with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.

Abstract: The present invention provides a method for reducing a metal of a sugar-alcohol compound, the method including the steps of (A) protecting a hydroxyl group of a sugar-alcohol compound containing metal impurities with a protecting group, (B) removing the metal impurities from the sugar-alcohol compound having the hydroxyl group protected with the protecting group, and (C) eliminating the protecting group of the sugar-alcohol compound from which the metal has been removed. There can be provided a method for reducing a metal of a sugar-alcohol compound that can provide a sugar-alcohol compound with a suitable quality for the semiconductor apparatus manufacturing process.