Abstract: A semiconductor light-emitting device includes a first bonding pattern made of metal that is formed on a substrate, and a second bonding pattern provided in a base portion and a flange portion of a dome-shaped transparent body. The first and second bonding patterns are bonded to each other via solder, to seal a space in a convex lid portion. The first and second bonding patterns have rectangular ring shapes that surround the semiconductor light-emitting element when viewed from above, at least edges on inner peripheral sides of corner portions thereof are positioned on outer sides of outer peripheral edges of an annular base portion of the convex lid portion, and edges on inner peripheral sides of straight-line portions sandwiched between the corner portions are positioned closer to the semiconductor light-emitting element than the outer peripheral edge of the annular base portion of the convex lid portion.

Abstract: Provided is an optical semiconductor element in which an unbonded portion between an optical semiconductor chip and a submount is made small, heat dissipation efficiency becomes high, and service life can be made long. The optical semiconductor element can include: a submount; a submount electrode provided on a mounting surface of the submount and having a rectangular shape as a whole; and a semiconductor chip including an element substrate, a semiconductor structure layer formed on the element substrate, and a chip electrode bonded to the submount electrode via a bonding layer. The chip electrode has a shape with chipped corners corresponding to four corners of the submount electrode, which has an exposed surface that is a portion exposed from the chip electrode at the four corners and bonded to the chip electrode to coincide with each other. The bonding layer extends to all the four corners of the exposed surface.

Abstract: Provided is an optical semiconductor element in which an unbonded portion between an optical semiconductor chip and a submount is made small, heat dissipation efficiency becomes high, and service life can be made long. The optical semiconductor element can include: a submount; a submount electrode provided on a mounting surface of the submount and having a rectangular shape as a whole; and a semiconductor chip including an element substrate, a semiconductor structure layer formed on the element substrate, and a chip electrode bonded to the submount electrode via a bonding layer. The chip electrode has a shape with chipped corners corresponding to four corners of the submount electrode, which has an exposed surface that is a portion exposed from the chip electrode at the four corners and bonded to the chip electrode to coincide with each other. The bonding layer extends to all the four corners of the exposed surface.

Abstract: A semiconductor light-emitting apparatus is constructed by a substrate; a semiconductor light-emitting element mounted on the substrate; a wavelength-converting structure, provided on the semiconductor light-emitting element, at least an outer edge portion of the wavelength-converting structure having an uneven top surface; and a white-light reflective layer provided on the substrate to surround sidewalls of the semiconductor light-emitting element and the wavelength-converting structure. The white-light reflective layer further includes an additional transparent resin layer excluding the reflective fillers on at least the outer edge portion of the wavelength-converting structure. The additional transparent resin layer is coupled to the transparent resin layer.

Abstract: A semiconductor light-emitting apparatus is constructed by a substrate; a semiconductor light-emitting element mounted on the substrate; a wavelength-converting structure, provided on the semiconductor light-emitting element, at least an outer edge portion of the wavelength-converting structure having an uneven top surface; and a white-light reflective layer provided on the substrate to surround sidewalls of the semiconductor light-emitting element and the wavelength-converting structure. The white-light reflective layer further includes an additional transparent resin layer excluding the reflective fillers on at least the outer edge portion of the wavelength-converting structure. The additional transparent resin layer is coupled to the transparent resin layer.

Abstract: A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer and barrier layer laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion and the embedded barrier portion is configured such that a second apex angle of the embedded well portion is smaller than a first apex angle of the embedded barrier portion wherein the embedded well portion is subsequently formed on the embedded barrier portion.

Abstract: A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; an active layer; and an electron blocking layer formed on the active layer to cover the recess portion. The active layer is formed on the pit formation layer and having an embedded portion formed so as to embed the pit and a recess portion formed on a surface of the embedded portion to correspond to the pit. The recess portion of the active layer has an apex formed at a position existing in a layered direction of the active layer within the active layer.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer; a super lattice structure layer formed on the n-type semiconductor layer and including repeatedly-formed first semiconductor layers and second semiconductor layers having a composition with a band gap greater than that of the first semiconductor layer; an electron injection control layer including a first control layer formed on the second semiconductor layer of super lattice structure layer and a second control layer formed on the first control layer; and an MQW light emitting layer formed on the second control layer and including repeatedly-formed barrier layers and quantum well layers. The first control layer has a composition with a band gap smaller than that of the second semiconductor layer of super lattice structure layer. The second control layer has a composition and a thickness same as or smaller than those of the quantum well layer of the MQW light emitting layer.

Abstract: Provided is a semiconductor light-emitting element in which dopant interdiffusion is suppressed, the efficiency at which a carrier is infused into an active layer is improved, and there is less of a decrease in light-emitting intensity (droop) during high-current driving at a high light-emitting efficiency. The semiconductor light-emitting element composed of a GaN-based semiconductor includes an n-type semiconductor layer, an active layer formed on the n-type semiconductor layer, a first semiconductor layer formed on the active layer and having a concave/convex structure layer in the surface, and a second semiconductor structure layer doped with Mg and formed on the first semiconductor layer.

Abstract: A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer and barrier layer laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion and the embedded barrier portion is configured such that a second apex angle of the embedded well portion is smaller than a first apex angle of the embedded barrier portion wherein the embedded well portion is subsequently formed on the embedded barrier portion.

Abstract: A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; an active layer; and an electron blocking layer formed on the active layer to cover the recess portion. The active layer is formed on the pit formation layer and having an embedded portion formed so as to embed the pit and a recess portion formed on a surface of the embedded portion to correspond to the pit. The recess portion of the active layer has an apex formed at a position existing in a layered direction of the active layer within the active layer.

Abstract: A method for manufacturing a light-emitting element made of a GaN-based semiconductor with an MOCVD method includes the steps of: growing an n-type semiconductor layer; growing an active layer on the n-type semiconductor layer; and growing a p-type AlGaN-based semiconductor layer on the active layer while maintaining a concavo-convex surface with a depth of 1 to 5 nm.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer; a super lattice structure layer formed on the n-type semiconductor layer and including repeatedly-formed first semiconductor layers and second semiconductor layers having a composition with a band gap greater than that of the first semiconductor layer; an electron injection control layer including a first control layer formed on the second semiconductor layer of super lattice structure layer and a second control layer formed on the first control layer; and an MQW light emitting layer formed on the second control layer and including repeatedly-formed barrier layers and quantum well layers. The first control layer has a composition with a band gap smaller than that of the second semiconductor layer of super lattice structure layer. The second control layer has a composition and a thickness same as or smaller than those of the quantum well layer of the MQW light emitting layer.

Abstract: Provided is a semiconductor light-emitting element in which dopant interdiffusion is suppressed, the efficiency at which a carrier is infused into an active layer is improved, and there is less of a decrease in light-emitting intensity (droop) during high-current driving at a high light-emitting efficiency. The semiconductor light-emitting element composed of a GaN-based semiconductor includes an n-type semiconductor layer, an active layer formed on the n-type semiconductor layer, a first semiconductor layer formed on the active layer and having a concave/convex structure layer in the surface, and a second semiconductor structure layer doped with Mg and formed on the first semiconductor layer.