Abstract: The present invention provides an ethylene/tetrafluoroethylene copolymer showing good heat resistance and good crack resistance even in a high temperature environment. The present invention is an ethylene/tetrafluoroethylene copolymer, comprising: copolymerization units derived from ethylene; tetrafluoroethylene; and a fluorine-containing vinyl monomer represented by general formula: CH2?CH—Rf in the formula, Rf representing a perfluoroalkyl group containing four or more carbon atoms, a fluorine-containing vinyl monomer content being 0.8 to 2.5 mol % to a total amount of all monomers, an ethylene/tetrafluoroethylene molar ratio being 33.0/67.0 to 44.0/56.0, a CH index being 1.40 or less, a melting point being 230° C. or higher, and a melt flow rate being 40 (g/10 minutes) or less.

Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.

Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and a group 13 element under nitrogen containing atmosphere. The film 3 of a nitride of a group 13 element includes an inclusion distributed layer 3a in a region distant from an interface of the film of a nitride of group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a.

Abstract: A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate 8A includes a supporting body 1, a plurality of seed crystal layers 4A each comprising gallium nitride single crystal and separated from one another, a low temperature buffer layer 2 provided between the seed crystal layers 4A and the supporting body and made of a nitride of a group III metal element, and an exposed layer 3 exposed to spaces between the adjacent seed crystal layers 4A and made of aluminum nitride single crystal or aluminum gallium nitride single crystal. The gallium nitride layer is grown on the seed crystal layers by flux method.

Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and a group 13 element under nitrogen containing atmosphere. The film 3 of a nitride of a group 13 element includes an inclusion distributed layer 3a in a region distant from an interface of the film of a nitride of group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a.

Abstract: A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50 ?m or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer.

Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract: A seed crystal substrate 10 includes a supporting body 1, and a seed crystal film 3A formed on the supporting body 1 and composed of a single crystal of a nitride of a Group 13 metal element. The seed crystal film 3A includes main body parts 3a and thin parts 3b having a thickness smaller than that of the main body parts 3a. The main body parts 3a and thin part 3b are exposed to a surface of the seed crystal substrate 10. A nitride 15 of a Group 13 metal element is grown on the seed crystal film 3A by flux method.

Abstract: The present invention provides an aqueous fluoropolymer dispersion that shows favorable dispersion stability and is less likely to have a pH decrease even after storage for a long period of time. The present invention provides an aqueous fluoropolymer dispersion including: a fluoropolymer; a fluorine free surfactant; at least one organic electrolyte selected from the group consisting of hydroxy monocarboxylic acids, hydroxy dicarboxylic acids, tricarboxylic acids, and amino acids; and a fluorine-containing anionic surfactant containing not more than 7 carbon atoms.

Abstract: A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate 8A includes a supporting body 1, a plurality of seed crystal layers 4A each comprising gallium nitride single crystal and separated from one another, a low temperature buffer layer 2 provided between the seed crystal layers 4A and the supporting body and made of a nitride of a group III metal element, and an exposed layer 3 exposed to spaces between the adjacent seed crystal layers 4A and made of aluminum nitride single crystal or aluminum gallium nitride single crystal. The gallium nitride layer is grown on the seed crystal layers by flux method.

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract: An FEP pellet having a volatile content of 0.2% by weight or less. The FEP pellet satisfies the following requirements (i) and (ii) when used to form a insulating material coating a core wire by extrusion coating at a coating speed of 2,800 ft/min.: (i) an adhesive strength between the insulating material and said core wire of 0.8 kg or more; and (ii) an average number of cone-breaks in the insulating material of one or less per 50,000 feet of the coated core wire.

Abstract: Separators (5A, 5B, 6) and membrane-electrode assemblies (2) of a fuel cell stack (1) are alternately stacked in a guide box (40). The separators (5A, 5B, 6) each have groove-like gas paths (10A, 10B). Powder of an adhesive agent (7) is adhered in advance to the surfaces of the separators (5A, 5B, 6), except the gas paths (10A, 10B), through photosensitive drums (31A, 31B) to which the powder is adsorbed in a given pattern. The separators (5A, 5B, 6) and the membrane-electrode assemblies (2), stacked in the guide box (40), are heated and compressed by a press (43) and heaters (40C) to obtain a unitized fuel cell stack (1).

Abstract: Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 ?m, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.

Abstract: The present invention provides a composition including a fluorine-containing polymer, and excellent in heat resistance even if only a small amount of additives is added to the composition. The present invention relates to a composition, comprising: a fluorine-containing polymer (a) and a cobalt compound (b).

Abstract: The present invention provides an ethylene/tetrafluoroethylene copolymer showing good heat resistance and good crack resistance even in a high temperature environment. The present invention is an ethylene/tetrafluoroethylene copolymer, comprising: copolymerization units derived from ethylene; tetrafluoroethylene; and a fluorine-containing vinyl monomer represented by general formula: CH2=CH?Rf in the formula, Rf representing a perfluoroalkyl group containing four or more carbon atoms, a fluorine-containing vinyl monomer content being 0.8 to 2.5 mol % to a total amount of all monomers, an ethylene/tetrafluoroethylene molar ratio being 33.0/67.0 to 44.0/56.0, a CH index being 1.40 or less, a melting point being 230° C. or higher, and a melt flow rate being 40 (g/10 minutes) or less.

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract: A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.

Abstract: A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.