Abstract: An active matrix substrate includes a plurality of pixel electrodes; a plurality of switching elements that connect to each of the plurality of pixel electrodes; a plurality of pixel lines that connect to each of the plurality of switching elements; a plurality of connection lines that connect to each of the plurality of pixel lines; and a plurality of terminals that connect to each of the plurality of connection lines. An arrangement direction of the pixel lines and an arrangement direction of the terminals differ.

Abstract: A device includes a first element having rectification characteristics that allow electric current to flow from an upper electrode to a lower electrode, an n-channel thin film transistor, and a control electrode. The n-channel thin film transistor includes a semiconductor film, a gate electrode, a first signal electrode, and a second signal electrode. The control electrode faces the gate electrode with the semiconductor film interposed therebetween. The second signal electrode is connected with the lower electrode. The control electrode is connected with the lower electrode. At least a part of a first channel end on the first signal electrode side of the semiconductor film is located within a region of the control electrode, when viewed planarly. A second channel end on the second signal electrode side of the semiconductor film is distant from the control electrode, when viewed planarly.

Abstract: An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Abstract: A device includes a first element having rectification characteristics that allow electric current to flow from an upper electrode to a lower electrode, an n-channel thin film transistor, and a control electrode. The n-channel thin film transistor includes a semiconductor film, a gate electrode, a first signal electrode, and a second signal electrode. The control electrode faces the gate electrode with the semiconductor film interposed therebetween. The second signal electrode is connected with the lower electrode. The control electrode is connected with the lower electrode. At least a part of a first channel end on the first signal electrode side of the semiconductor film is located within a region of the control electrode, when viewed planarly. A second channel end on the second signal electrode side of the semiconductor film is distant from the control electrode, when viewed planarly.

Abstract: In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.

Abstract: An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Abstract: A base member includes a recessed portion extending in radial directions and recessed upward from a lower surface of the base member, and a hole extending through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface defining a loop-shaped surface in the radial direction. A connector is located on a lower side of the recessed portion to cover the hole portion. An adhesive is located between the connector and the recessed portion.

Abstract: A base member includes a recessed portion extending in radial directions and recessed upward from a lower surface of the base member and a hole extending through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface defining a loop-shaped surface in the radial direction. A connector is located on a lower side of the recessed portion to cover the hole portion. An adhesive is located between the connector and the recessed portion.

Abstract: A base member includes a recessed portion extending in radial directions and recessed upward from a lower surface of the base member, and a hole extending through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface defining a loop-shaped surface in the radial direction. A connector is located on a lower side of the recessed portion to cover the hole portion. An adhesive is located between the connector and the recessed portion.

Abstract: A base member includes a recessed portion extending in radial directions and recessed upward from a lower surface of the base member and a hole extending through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface defining a loop-shaped surface in the radial direction. A connector is located on a lower side of the recessed portion to cover the hole portion. An adhesive is located between the connector and the recessed portion.

Abstract: In a spindle motor, a cup portion of a base member includes a cylindrical portion coaxial or substantially coaxial with a central axis extending in a vertical direction and a bottom plate portion defined integrally with the cylindrical portion, and located to close a lower portion of the cylindrical portion. The bearing mechanism is inside of the cup portion and an outer circumferential surface of the bearing mechanism and an inner circumferential surface of the cylindrical portion include a first adhesive layer located therebetween. The base member includes a communicating hole that passes through the bottom plate portion in an axial direction. The communicating hole includes a second adhesive layer located therein.

Abstract: Provided are a photoelectric conversion device, a method of manufacturing the photoelectric conversion device, and an X-ray image detector. A photoelectric conversion device at least includes a photodiode device. The photodiode device includes a lower electrode and an upper electrode, and a photoelectric conversion layer put between the lower and upper electrodes, where the photoelectric conversion layer includes a patterned edge surface, is smaller in size than the lower electrode and is placed on a surface of the lower electrode. The photodiode device further includes a protecting film covering at least the patterned edge surface of the photoelectric conversion layer. The protecting film except for an area where a contact hole is formed and the lower electrode are formed with a same-shaped pattern.

Abstract: A base member includes a recessed portion arranged to extend in radial directions and recessed upward from a lower surface of the base member, the radial directions being directions perpendicular to a vertical direction; and a hole portion arranged to pass through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface being a loop-shaped surface perpendicular to the vertical direction. A connector is arranged on a lower side of the recessed portion to cover the hole portion. An adhesive is arranged between the connector and the recessed portion.

Abstract: In a spindle motor, a cup portion of a base member includes a cylindrical portion coaxial or substantially coaxial with a central axis extending in a vertical direction and a bottom plate portion defined integrally with the cylindrical portion, and located to close a lower portion of the cylindrical portion. The bearing mechanism is inside of the cup portion and an outer circumferential surface of the bearing mechanism and an inner circumferential surface of the cylindrical portion include a first adhesive layer located therebetween. The base member includes a communicating hole that passes through the bottom plate portion in an axial direction. The communicating hole includes a second adhesive layer located therein.

Abstract: A cup portion of a base member includes a cylindrical portion and a bottom plate portion. The cylindrical portion is arranged to be coaxial or substantially coaxial with a central axis extending in a vertical direction. The bottom plate portion is defined integrally with the cylindrical portion, and is arranged to close a lower portion of the cylindrical portion. A bearing mechanism is arranged inside of the cup portion. An outer circumferential surface of the bearing mechanism and an inner circumferential surface of the cylindrical portion have an adhesive layer arranged therebetween. In one preferred embodiment of the present invention, a communicating hole passing through the cylindrical portion in a direction that crosses an axial direction is defined in the vicinity of a junction of the cylindrical portion and the bottom plate portion. In another preferred embodiment of the present invention, the base member includes a communicating hole passing through the bottom plate portion in the axial direction.

Abstract: To provide a touch sensor board and the like capable of improving the visibility of the screen and the manufacture yield simultaneously. The touch sensor board includes a plurality of mutually parallel first electrodes extended along a first direction and a plurality of mutually parallel second electrodes extended along a second direction. Regarding the first and second electrodes, one of those is connected to each electrode element via a same-layer connection pattern while the other is connected to each electrode element via a different-layer connection pattern. The same-layer connection pattern and the different-layer connection pattern overlap on one another via an interlayer film formed by an insulator. Further, the interlayer film is continued from the overlapping part between the same-layer connection pattern and the different-layer connection pattern via a gap part between each of the electrode elements, and the interlayer film is formed to be continued in the gap part.

Abstract: A base member includes a recessed portion arranged to extend in radial directions and recessed upward from a lower surface of the base member, the radial directions being directions perpendicular to a vertical direction; and a hole portion arranged to pass through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface being a loop-shaped surface perpendicular to the vertical direction. A connector is arranged on a lower side of the recessed portion to cover the hole portion. An adhesive is arranged between the connector and the recessed portion.

Abstract: A base member includes a recessed portion arranged to extend in radial directions and recessed upward from a lower surface of the base member, the radial directions being directions perpendicular to a vertical direction or directions parallel to these directions; and a hole portion arranged to pass through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface being a loop-shaped surface perpendicular to the vertical direction. A connector is arranged on a lower side of the recessed portion to cover the hole portion. An adhesive is arranged between the connector and the recessed portion.

Abstract: Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric transducers and switching elements formed in layers on the substrate in this order. Each of the photoelectric transducers includes a hydrogenated amorphous silicon layer. Each of the switching elements includes an amorphous oxide semiconductor layer. The image sensor further includes a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, where the blocking layer suppresses penetration of hydrogen separated from the hydrogenated amorphous silicon layers.

Abstract: In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.