Abstract: According to one embodiment, an X-ray tube includes an anode including a target surface, and a cathode including a first filament and a focusing electrode. The focusing electrode includes a valley bottom portion, a first inclined plane sloping up from the valley bottom portion in a direction of the anode, a first focusing groove, and a first storage groove. ?1 is greater than 0°. The first focusing groove has a longitudinal axis. One end portion on the first extension line side of the first focusing groove is closer to a first reference surface than the other end portion of the first focusing groove.

Abstract: The blowing device includes an impeller that is rotatable about a center axis and a motor that drives the impeller. The impeller includes a plurality of vanes arranged in a circumferential direction, a flange in which the plurality of vanes are provided at the outer circumferential edge in a radial-direction outside, and a plate-shaped first shielding unit located between the vanes adjacent to each other in the circumferential direction. The first shielding unit is connected to a rear edge surface on an opposite side to the rotation direction of the vane and an outside surface located on the radial-direction outside of the flange.

Abstract: A semiconductor device according to an embodiment includes a substrate. A transistor includes a source layer and a drain layer that are provided in a surface region of the substrate and contain impurities. A gate dielectric film is provided on the substrate between the source layer and the drain layer. A gate electrode is provided on the gate dielectric film. A first epitaxial layer is provided on the source layer or the drain layer. A second epitaxial layer is provided on the first epitaxial layer and contains both the impurities and carbon. A contact plug is provided on the second epitaxial layer. A memory cell array is provided above the transistor.

Abstract: A compound represented by a formula [1D] as shown below (wherein R1A, R1B, R2A, R2B, R3A and R3B represent a hydrogen atom, an optionally substituted C1-6 alkyl group, and the like) is useful as an intermediate for producing a thionucleoside, and the production method of the present invention is useful as a method for producing a thionucleoside.

Abstract: A white organic electroluminescent (EL) element includes, in sequence, an anode, a first light-emitting layer that is a blue-light-emitting layer, a hole-blocking layer, an electron transport layer, and a cathode. The hole-blocking layer is adjacent to the first light-emitting layer and the electron transport layer and formed of a hydrocarbon. The electron transport layer is formed of a nitrogen-containing heterocyclic compound. The first light-emitting layer contains a first host and a first dopant that emits blue fluorescent light. Relations (a), (b), and (c) are satisfied. LUMO(H1)>LUMO(D1)??(a) 0.1<d(ETL)/d(HBL)<0.

Abstract: A yeast extract containing 0.2% or more of ?-Glu-Abu based on dry weight of the yeast extract is produced by culturing a yeast, such as Saccharomyces cervisiae or Candida utilis, in a medium containing a compound selected from Abu (L-2-aminobutyric acid) and ?-Glu-Abu (L-?-glutamyl-L-2-aminobutyric acid), and preparing a yeast extract from the obtained cells.

Abstract: Provided is an organic white light emitting element (EL) including: a reflective electrode, a light extraction electrode, and an organic layer arranged therebetween, the organic layer including: a blue light emitting layer (BL); and a long-wavelength light emitting layer, the long-wavelength light emitting layer arranged between the BL and the reflective electrode, the BL provided at such a position as to satisfy Equation given below: z=?×?1/4? where z represents an optical distance between the reflective electrode and an interface of the BL on the reflective electrode side, ? represents a phase of light reflected by the reflective electrode in an emission wavelength region of the BL, and ?1 represents a wavelength in a visible light region, and the EL has a resonator structure defined between the reflective electrode and the light extraction electrode and has a maximum peak resonant wavelength in a blue light wavelength region.

Abstract: A steering display device of a work vehicle visually displaying a steering state of control wheels of the work vehicle, includes a display and an image generation unit. The display displays a rectangular frame representing a vehicle width of the work vehicle and a pointer representing a state of a steering of the control wheels as graphic information, and the image generation unit rotates the pointer about a rotation axis of the pointer and widens or narrows the rectangular frame based on the steering of the control wheels. The image generation unit generates the pointer and the rectangular frame in a manner such that when a steering angle of the control wheels exceeds a predetermined value, part of the pointer protrudes from the rectangular frame.

Abstract: A display apparatus includes on a substrate a plurality of light emitting elements in which an organic layer including a white light emitting layer is sandwiched between a lower transparent electrode and an upper electrode, and further includes a reflection layer and an optical interference layer provided between the light emitting elements and the substrate, wherein the optical interference layer is made of a material having a lower refractive index than the refractive index of the light emitting layer and the ratio (nr/nb) of a refractive index (nr) with respect to a red wavelength region to a refractive index (nb) with respect to a blue wavelength region is less than 0.95, and the orders of interference m for blue, green, and red wavelength regions are 5, 4, and 3, respectively, when the optical distance from the light emitting layer to the reflection layer is (2m+1)?/4±(?)?.

Abstract: A semiconductor device according to an embodiment includes a substrate. A transistor includes a source layer and a drain layer that are provided in a surface region of the substrate and contain impurities. A gate dielectric film is provided on the substrate between the source layer and the drain layer. A gate electrode is provided on the gate dielectric film. A first epitaxial layer is provided on the source layer or the drain layer. A second epitaxial layer is provided on the first epitaxial layer and contains both the impurities and carbon. A contact plug is provided on the second epitaxial layer. A memory cell array is provided above the transistor.

Abstract: Provided are an emulsion of a nitrogen atom-containing polymer or a salt thereof, the emulsion having high emulsion stability and having a low dispersity of the particle diameter of emulsified particles, and a method for producing the emulsion. Also provided is a method for producing particles including a crosslinked nitrogen atom-containing polymer or a salt thereof by using the emulsion described above.

Abstract: One embodiment of this invention has a first electrode, a first light emitting layer, and a second electrode, in which the first light emitting layer has a first host material and a first dopant material, a lowest triplet excitation energy of the first host material is higher than a lowest triplet excitation energy of the first dopant material, and, when a weight of the first light emitting layer is set to 100 wt %, a concentration of the first dopant material is 0.3 wt % or less.

Abstract: In a semiconductor device, a source and a drain layers are located in a surface region of a substrate. A source crystal layer is located in a contact region of the source layer to extend to a position higher than the substrate. A drain crystal layer is located in a contact region of the drain layer to extend to a position higher than the substrate. A source contact is located on the source crystal layer. A drain contact is located on the drain crystal layer. A gate width or a gate length extends to a crystal orientation <110> of the substrate. A long side or a major axis of the source crystal layer or a long side or a major axis of the drain crystal layer extends in a direction inclined with respect to the crystal orientation <110> in a planar layout parallel to the surface of the substrate.

Abstract: A liquid discharge apparatus includes a liquid discharge head having at least one nozzle array including a plurality of nozzles lined in a nozzle array direction; a two-dimensional image sensor to capture an image formed by the liquid discharge head; and circuitry. The circuitry is configured to divide the nozzles into a plurality of nozzle units; form a pattern including a plurality of unit patterns with liquid discharged from the nozzle units, respectively; and detect a defective nozzle based on a captured image of each of the unit patterns. The unit patterns are arranged in a staggered manner. Each unit pattern is smaller in size than an image capture range of the two-dimensional image sensor. Each unit pattern includes a number of columns of lines extending in a direction perpendicular to the nozzle array direction, and the number of columns is not smaller than twice the number of nozzle arrays.

Abstract: In a semiconductor device, a source and a drain layers are located in a surface region of a substrate. A source crystal layer is located in a contact region of the source layer to extend to a position higher than the substrate. A drain crystal layer is located in a contact region of the drain layer to extend to a position higher than the substrate. A source contact is located on the source crystal layer. A drain contact is located on the drain crystal layer. A gate width or a gate length extends to a crystal orientation <110> of the substrate. A long side or a major axis of the source crystal layer or a long side or a major axis of the drain crystal layer extends in a direction inclined with respect to the crystal orientation <110> in a planar layout parallel to the surface of the substrate.

Abstract: Provided is an auxiliary burner for an electric furnace capable of increasing and homogenizing the heating effect of iron scrap by suitably and efficiently burning solid fuel along with gas fuel. This presently disclosed auxiliary burner 100 for an electric furnace comprises a solid fuel injection tube 1, a gas fuel injection tube 2, and a combustion-supporting gas injection tube 3 in the stated order from the center side, all arranged coaxially, and is characterized in that: a combustion-supporting gas flow path 30 of the combustion-supporting gas injection tube 3 is provided with a plurality of swirl vanes 4 for swirling the combustion-supporting gas, and the angle ? formed between the swirl vanes 4 and the burner axis is 5° or more and 45° or less.

Abstract: A liquid discharging unit includes a first color nozzle group that includes nozzle arrays each in which nozzle holes for discharging liquids of process colors are arranged in a sub scanning direction perpendicular to a main scanning direction; a second color nozzle group that is provided on upstream side in the sub scanning direction with respect to the first color nozzle group and includes nozzle arrays each in which nozzle holes for discharging liquids of process colors are arranged in the sub scanning direction; and at least one auxiliary nozzle group that is provided between the first color nozzle group and the second color nozzle group and includes nozzle arrays each in which holes for discharging liquids of colors different from the process colors are arranged in the sub scanning direction. The nozzle groups are respectively arranged to be shifted from each other in the main scanning direction.

Abstract: Provided is an auxiliary burner for an electric furnace capable of increasing and homogenizing the heating effect of iron scrap by suitably and efficiently burning solid fuel along with gas fuel. This auxiliary burner 100 for an electric furnace comprises a solid fuel injection tube 1, a gas fuel injection tube 2, and a combustion-supporting gas injection tube 3 in the stated order from the center side, all arranged coaxially, and is characterized in that: a flow path 30 of the combustion-supporting gas injection tube 3 is provided with a plurality of swirl vanes 4 for swirling the combustion-supporting gas, and a flow path 20 of the gas fuel injection tube 2 is provided with a plurality of swirl vanes 5 for swirling the gas fuel; and the angle ?1 of the swirl vanes 4 and the ?2 of the swirl vanes 5 satisfy the relationship ?1<?2.

Abstract: A mutant glutathione synthetase (GSHB) suitable for generating ?-Glu-Val-Gly, and a method for producing ?-Glu-Val-Gly using the same are provided. ?-Glu-Val-Gly is produced by using a mutant GSHB having a mutation at such a position as V7, N13, I14, N15, K17, F22, F95, M165, N199, Y200, P202, I274, T285, and P287.

Abstract: In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.