Patents by Inventor Takayuki Munemoto
Takayuki Munemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7159303Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: March 9, 2006Date of Patent: January 9, 2007Assignee: Hitachi Global Storage Technologies, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20060152862Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: March 9, 2006Publication date: July 13, 2006Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 7054120Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: November 5, 2003Date of Patent: May 30, 2006Assignee: Hitachi Global Storage Technologies Japan, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20040090850Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: November 5, 2003Publication date: May 13, 2004Applicant: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 6687099Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: October 15, 2002Date of Patent: February 3, 2004Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20030117750Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: October 15, 2002Publication date: June 26, 2003Applicant: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 6483677Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: August 20, 2001Date of Patent: November 19, 2002Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20020018325Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: August 20, 2001Publication date: February 14, 2002Applicant: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 6278593Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: December 21, 1999Date of Patent: August 21, 2001Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 6011674Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: April 2, 1996Date of Patent: January 4, 2000Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 5739976Abstract: As a method of increasing the storage capacity of a magnetic recording and reproducing apparatus for recording and reproducing information to and from a magnetic tape in a cartridge, there is a helical scan recording method in which the magnetic tape is diagonally wound around a drum which rotates a magnetic head. With an apparatus adapted to this method, the disposition of the cartridge and the take-up reel for taking up the magnetic tape on the same plane arises a necessity of considerably bending the magnetic tape at the drum portion and, accordingly, the magnetic tape is damaged. In order to prevent the damage of the foregoing type, the tape passage surface from the cartridge to the drum and the tape passage from the drum to the take-up reel are formed by an angle at which the direction in which the magnetic tape is moved is changed due to winding of the magnetic tape around the drum so that the magnetic tape is not bent excessively.Type: GrantFiled: October 30, 1995Date of Patent: April 14, 1998Assignee: Hitachi, Ltd.Inventors: Kazuo Sakai, Fumio Takeda, Taichiro Yamashita, Fujio Tajima, Takao Terayama, Tomokazu Ishii, Kooetsu Okuyama, Takayuki Munemoto, Nobuyuki Kaku, Kenmei Masuda, Shigeyuki Kobata, Fukuyasu Abe, Kenji Ogiro, Shigemitsu Higuchi
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Patent number: 5736235Abstract: A magnetic recording medium, its fabrication method, and a magnetic recording apparatus in which both saturation induction and coercive force of a magnetic film is made high as they are near a surface of the recording medium. A high density information recording can be made higher than 50 kFCI in linear recording density even for spacing around 0.2 .mu.m.Type: GrantFiled: August 6, 1991Date of Patent: April 7, 1998Assignee: Hitachi, Ltd.Inventors: Yoshibumi Matsuda, Masaaki Futamoto, Yoshinori Miyamura, Tokuho Takagaki, Hisashi Takano, Fumio Kugiya, Takeshi Nakao, Kyo Akagi, Mikio Suzuki, Hirotsugu Fukuoka, Takayuki Munemoto
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Patent number: 5726837Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: October 24, 1994Date of Patent: March 10, 1998Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 5568331Abstract: A method and device of head positioning in an information recording/reading device in which a magnetic recording medium with data tracks for recording information thereon is provided and a magnetic head is positioned on the data track to record/read out the information, wherein a data signal is recorded in the data recording layer of said recording medium, a servo signal is recorded in the servo signal recording layer located below said data signal recording layer, said data signal is read out using a data magnetic head whereas said servo signal is read out using a servo magnetic head, and the frequency of said servo signal is within the range of the gap-null frequency of said data magnetic head whereas the frequency of said data signal is within the range of the gap-null frequency of said servo magnetic head, and said magnetic head is positioned on the data track on the basis of said servo signal.Type: GrantFiled: October 25, 1990Date of Patent: October 22, 1996Assignee: Hitachi, Ltd.Inventors: Kyo Akagi, Masaaki Futamoto, Fumio Kugiya, Yoshinori Miyamura, Hisashi Takano, Yoshibumi Matsuda, Mikio Suzuki, Takeshi Nakao, Takayuki Munemoto, Hirotsugu Fukuoka, Makoto Aihara, Tokuho Takagaki, Hajime Aoi, Yosuke Seo
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Patent number: 5495371Abstract: A magnetic recording and reproducing device and a magnetic tape library device are provided for properly recovering a function and issuing a warning when a failure of a magnetic head of the device takes place because of wear and dirt of the magnetic head. Further, a method for maintaining the magnetic head is provided. A wear sensor and a dirt sensor are prepared for sensing a wear amount of a state of dirt of the magnetic head. A head check controller operates to determine the wear amount of the magnetic head and the state of dirt based on the sensed result. In accordance with the determined result, the warning device is started for taking a precaution of preventing a head failure. As one aspect, the tape library device instructs to load the cleaning tape using a robot.Type: GrantFiled: November 29, 1993Date of Patent: February 27, 1996Assignee: Hitachi, Ltd.Inventors: Takayuki Munemoto, Kazuo Sakai, Fujio Tajima, Tomokazu Ishii, Fumio Takeda, Kouetsu Okuyama, Takeshi Itoh, Shigeyuki Kobata, Kenmei Masuda, Shigemitsu Higuchi
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Patent number: 5390061Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: June 5, 1991Date of Patent: February 14, 1995Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 5325244Abstract: A magnetic recording data storage system includes a magnetic recording medium having pits formed therein, the pits defining recording tracks on the magnetic recording medium and being arranged in a staggered manner relative to respective center lines of the recording tracks, a magnetic head including an inductive element for recording data on the recording tracks and a magnetoresistive element for reproducing data from the recording tracks, one of (1) a unit for magnetically producing a signal from the pits, and (2) an optical unit for optically producing a signal from the pits, the optical unit including a laser for illuminating the pits, servo means for positioning the head on the recording tracks based on the signal produced from the pits, the servo means including a dual-stage actuator including a rough movement portion and a fine movement portion.Type: GrantFiled: February 28, 1992Date of Patent: June 28, 1994Assignee: Hitachi, Ltd.Inventors: Hisashi Takano, Kyo Akagi, Mikio Suzuki, Yoshibumi Matsuda, Takeshi Nakao, Yoshinori Miyamura, Fumio Kugiya, Masaaki Futamoto, Hideki Sawaguchi, Nobuyuki Inaba, Takayuki Munemoto, Kenji Mori, Hirotsugu Fukuoka, Tokuho Takagaki
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Patent number: 5177652Abstract: In a rotary-disk transducer position control apparatus and method in which positional information concerning a transducer relative to a rotary disk based on a signal is obtained from the transducer which is disposed in opposition to the rotary disk, a seek instruction is inputted through an input device so that a first transducer access mechanism is caused to make the transducer perform a seeking operation at a low speed with a large stroke in accordance with both the positional information and the seek instruction, and in order to make the transducer perform both a seeking operation and a following operation, a second transducer access mechanism is caused to drive the transducer at a high speed with a small stroke in accordance with the positional information and the seek instruction.Type: GrantFiled: April 4, 1990Date of Patent: January 5, 1993Assignee: Hitachi, Ltd.Inventors: Yuzo Yamaguchi, Takayuki Munemoto