Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

Abstract: This disclosure relates to a reproduction system, a display apparatus, and a reproduction apparatus for providing higher acoustic performance. There is provided a reproduction system including a display apparatus including a display section configured to display an image of content, and a first sound output section configured to output a sound of the content in a manner localizing a sound image on a screen of the display section, and a reproduction apparatus including a processing section configured to process an audio signal of the content, and a second sound output section configured to output the sound of the content, in which the first sound output section and the second sound output section output the sound simultaneously on the basis of an audio signal of a center channel of the content. This disclosure may be applied to an AV system formed by a television receiver and audio equipment, for example.

Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.

Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.

Abstract: Provided is a treatment liquid for treating a semiconductor wafer in a semiconductor forming process, the treatment liquid containing (A) a hypobromite ion, (B) a pH buffer, and (C) an onium ion represented by formula (1): (wherein R1, R2, R3, and R4 each independently denote an alkyl group having carbon number from 1 to 25,)

Abstract: The present invention provides industrially advantageous production method and production apparatus, with respect to production of a halogen oxyacid solution. There is solved by a method for producing a halogen oxyacid solution, comprising continuously supplying an organic alkaline solution and halogen to a static mixer and mixing them, to thereby continuously obtain a halogen oxyacid generated.

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium including a ligand which coordinates to ruthenium, the treatment liquid is a treatment liquid for inhibiting a ruthenium-containing gas generated when contacting a semiconductor wafer including ruthenium with the treatment liquid in a semiconductor forming process. Also provided is an inhibitor for the generation of a ruthenium-containing gas, including a compound having a carbonyl group or a heterocyclic compound. Further provided is a treatment agent for a ruthenium-containing waste liquid, including a compound having a carbonyl group or a heterocyclic compound.

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

Abstract: A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing hypobromite ions. Also provided is a treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid characterized by being formed by adding and mixing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % as an amount of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less; and pH at 25° C. is 8 or higher and 14 or lower. Further provided is a method for producing the treatment liquid for a semiconductor.

Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.

Abstract: A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

Abstract: The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.

Abstract: Provided is an audio reproduction device that includes first and second speaker supports that have a lid shape and are provided on a case in an openable and closable manner, a sensor that detects a first state and a second state, the first and second speaker supports being closed in the first state, the first and second speaker supports being opened and held almost horizontally in the second state, first and second speakers respectively attached on front surfaces of the first and second speaker supports such that a distance in the second state is larger than a distance in the first state, and a reproduction characteristic control unit that switches reproduction characteristics of the first and second speakers in the first state and the second state on the basis of a detection signal from the sensor.

Abstract: A method for producing halogen oxyacid, which includes a step of continuously supplying and mixing an organic alkali solution and a halogen and continuously collecting a reaction solution containing halogen oxyacid, and an production apparatus of halogen oxyacid, which includes a reactor, a means of supplying an organic alkali solution to the reactor, a means of supplying a halogen to the reactor, and a means of collecting a reaction solution for taking out the reaction solution from the reactor, in which the organic alkali solution and the halogen are continuously supplied by the means of supplying an organic alkali solution and the means of supplying a halogen, respectively, to the reactor so as to be mixed therein such that a solution containing halogen oxyacid is generated as a reaction solution, and the reaction solution is continuously collected by the means of collecting a reaction solution are provided.

Abstract: Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 ?mol/L or more and less than 0.001 mol/L; a RuO4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 ?mol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.

Abstract: A treatment liquid for cleaning a semiconductor wafer is a treatment liquid containing (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.

Abstract: A ruthenium oxide gas absorbent liquid includes an organic alkali solution containing a ligand and/or an onium salt composed of an onium ion and an anion, at least part of which is a hydroxide ion, wherein the hydroxide ion has a concentration ranging from more than 1×10?7 mol/L to 6 mol/L or less.

Abstract: Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1). (wherein a is an integer from 6 to 20, R1, R2, and R3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X? is a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.