Patents by Inventor Takayuki Oshima
Takayuki Oshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190244855Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: April 16, 2019Publication date: August 8, 2019Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
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Patent number: 10304726Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: September 21, 2018Date of Patent: May 28, 2019Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Publication number: 20190035678Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: September 21, 2018Publication date: January 31, 2019Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
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Patent number: 10170415Abstract: On a transistor layer having arranged thereon multiple transistors each including a drain, a source, and a gate, metal interconnection layers serving as input side interconnection layers connected to the drains of the respective transistors and metal interconnection layers serving as output side interconnection layers connected to the sources of the respective transistors are arranged in parallel. Also provided are a plurality of through holes connecting the metal interconnection layers serving as input side interconnection layers to the drains of the respective transistors and connecting the metal interconnection layers serving as output side interconnection layers to the sources of the respective transistors. Resistance values of the plurality of through holes are changed along an arranging direction of the input side interconnection layers and the output side interconnection layers. Accordingly, current densities of the transistors arranged to be distributed in a two-dimensional manner can be uniform.Type: GrantFiled: July 25, 2016Date of Patent: January 1, 2019Assignee: Hitachi Automotive Systems, Inc.Inventors: Katsumi Ikegaya, Takayuki Oshima
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Patent number: 10121693Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: October 9, 2017Date of Patent: November 6, 2018Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Publication number: 20180247892Abstract: On a transistor layer having arranged thereon multiple transistors each including a drain, a source, and a gate, metal interconnection layers serving as input side interconnection layers connected to the drains of the respective transistors and metal interconnection layers serving as output side interconnection layers connected to the sources of the respective transistors are arranged in parallel. Also provided are a plurality of through holes connecting the metal interconnection layers serving as input side interconnection layers to the drains of the respective transistors and connecting the metal interconnection layers serving as output side interconnection layers to the sources of the respective transistors. Resistance values of the plurality of through holes are changed along an arranging direction of the input side interconnection layers and the output side interconnection layers. Accordingly, current densities of the transistors arranged to be distributed in a two-dimensional manner can be uniform.Type: ApplicationFiled: July 25, 2016Publication date: August 30, 2018Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.Inventors: Katsumi IKEGAYA, Takayuki OSHIMA
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Publication number: 20180218936Abstract: It is an object of the present invention to provide a switch element and a load driving apparatus capable of suppressing a characteristic change of an on-resistance without lowering an off-breakdown voltage. The switching element includes a control electrode, an active element region, and an inactive element region, and the active element region and the inactive element region are formed adjacent to each other on the control electrode. Alternatively, in the load driving apparatus including a current driving switch element and a current detecting switch element that is connected in parallel to the load driving switch element and that detects an energization current of the load driving switch element, the current detecting switch element includes at least a control electrode, an active element region, and an inactive element region, and the active element region and the inactive element region are formed adjacent to each other on the control electrode.Type: ApplicationFiled: July 1, 2016Publication date: August 2, 2018Inventors: Shinichirou WADA, Takayuki OSHIMA, Katsumi IKEGAYA
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Publication number: 20180211898Abstract: Provided is a vehicle-mounted semiconductor device enabling a temperature increase of active elements to be restricted. A vehicle-mounted semiconductor device includes: a semiconductor substrate; a plurality of active elements formed on the semiconductor substrate; a plurality of trenches surrounding the plurality of active elements to insulate and separate the active elements; and a terminal connecting in parallel the plurality of active elements insulated and separated by different trenches among the plurality of trenches and connected to an outside.Type: ApplicationFiled: August 2, 2016Publication date: July 26, 2018Inventors: Takayuki OSHIMA, Shinichirou WADA, Katsumi IKEGAYA, Hiroshi YONEDA
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Publication number: 20180047620Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: October 9, 2017Publication date: February 15, 2018Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
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Patent number: 9818639Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: March 27, 2017Date of Patent: November 14, 2017Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Publication number: 20170200637Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: March 27, 2017Publication date: July 13, 2017Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
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Patent number: 9659867Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: September 22, 2016Date of Patent: May 23, 2017Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Publication number: 20170011994Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: September 22, 2016Publication date: January 12, 2017Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
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Patent number: 9490213Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: May 1, 2015Date of Patent: November 8, 2016Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Patent number: 9293578Abstract: Adverse effects can be hardly exerted on a current performance of an LDMOSFET to suppress the amount of carrier implantation from an anode layer of an LDMOS parasitic diode, and improve a reverse recovery withstand of the parasitic diode. The LDMOSFET includes a semiconductor substrate having a first semiconductor region formed of a feeding region of a first conductivity type at a position where a field oxide film is not present on a surface layer of a semiconductor region in which the field oxide film is selectively formed, and a second semiconductor region formed of a well region of a second conductivity type which is an opposite conductivity type, and feeding regions of the first conductivity type and the second conductivity type formed on an upper layer of the well region, and a gate electrode that faces the well region through a gate oxide film.Type: GrantFiled: July 3, 2013Date of Patent: March 22, 2016Assignee: Hitachi, Ltd.Inventors: Tomoyuki Miyoshi, Takayuki Oshima, Yohei Yanagida, Hiroki Kimura, Kenji Miyakoshi
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Publication number: 20150235962Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: May 1, 2015Publication date: August 20, 2015Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
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Patent number: 9064870Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: June 30, 2014Date of Patent: June 23, 2015Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Publication number: 20140312499Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: June 30, 2014Publication date: October 23, 2014Applicant: Renesas Electronics CorporationInventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
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Patent number: 8841724Abstract: In an LDMOS transistor, a channel length is reduced to increase a saturation current without causing an off-state breakdown voltage optimized in terms of trade-off between an on-resistance and the off-state breakdown voltage. A short channel region is selectively formed between an element isolation film and a low-concentration body region in which a channel is formed such that the short channel region is located immediately below a gate oxide film. The short channel region has a conduction type opposite to that of the low-concentration body region and has a carrier concentration higher than that of the low-concentration body region. The body region is retreated by the presence of the short channel region toward a high-concentration source region.Type: GrantFiled: December 29, 2010Date of Patent: September 23, 2014Assignee: Hitachi, Ltd.Inventors: Kenji Miyakoshi, Shinichiro Wada, Yohei Yanagida, Takayuki Oshima, Keigo Kitazawa
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Patent number: 8810034Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: December 3, 2013Date of Patent: August 19, 2014Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi