Patents by Inventor Takayuki Toshima

Takayuki Toshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200098593
    Abstract: A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.
    Type: Application
    Filed: February 2, 2018
    Publication date: March 26, 2020
    Inventors: Isao HIRANO, Shoichi TERADA, Junji NAKAMURA, Takayuki TOSHIMA
  • Publication number: 20190279861
    Abstract: The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to subsequently heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent in the processing liquid and is lower than the boiling point of the removing agent, and a rinsing liquid supplying unit configured to subsequently supply a rinsing liquid to the substrate so as to remove the adhered substance from the substrate.
    Type: Application
    Filed: May 23, 2019
    Publication date: September 12, 2019
    Inventors: Takayuki Toshima, Shoichi Terada, Junji Nakamura
  • Patent number: 10347482
    Abstract: The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to subsequently heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent in the processing liquid and is lower than the boiling point of the removing agent, and a rinsing liquid supplying unit configured to subsequently supply a rinsing liquid to the substrate so as to remove the adhered substance from the substrate.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: July 9, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Takayuki Toshima, Shoichi Terada, Junji Nakamura
  • Patent number: 10333062
    Abstract: Provided is a substrate including a first magnetic layer, a second magnetic layer, and a tunnel insulating layer formed of magnesium oxide and disposed between the first magnetic layer and the second magnetic layer. A cleaning liquid is supplied to the substrate to clean the substrate and then, a rinsing liquid is supplied to the substrate to rinse the cleaning liquid. The concentration of moisture contained in the cleaning liquid and the rinse liquid is than 3 wt % or less.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: June 25, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Yasushi Fujii, Takayuki Toshima
  • Publication number: 20190185793
    Abstract: An alkaline wet solution for protecting features on a patterned substrate and a substrate processing method using the alkaline wet solution are described. The method includes providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue, performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica, and performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating. The patterned substrate can further include a metallization layer and the alkaline wet solution can further contain 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.
    Type: Application
    Filed: December 14, 2018
    Publication date: June 20, 2019
    Inventors: Takayuki Toshima, Hiroshi Marumoto, Yoshinori Nishiwaki, Trace Hurd
  • Patent number: 10207349
    Abstract: In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: February 19, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii, Takayuki Toshima, Hiroaki Inadomi
  • Patent number: 10199240
    Abstract: A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: February 5, 2019
    Assignees: Toshiba Memory Corporation, Tokyo Electron Limited
    Inventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Mitsuaki Iwashita, Takehiko Orii, Gen You, Hiroki Ohno, Takayuki Toshima
  • Patent number: 10115609
    Abstract: Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: October 30, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Kazuyuki Mitsuoka, Hiroki Ohno, Takehiko Orii, Takayuki Toshima
  • Publication number: 20180301623
    Abstract: According to the present invention, a substrate (W) which has a first magnetic layer (81), a second magnetic layer (82), and a tunnel insulating layer (83) that is formed of magnesium oxide and is arranged between the first magnetic layer (81) and the second magnetic layer (82) is prepared. The substrate (W) is cleaned by supplying a cleaning liquid to the substrate (W), and subsequently, the cleaning liquid is rinsed by supplying a rinsing liquid to the substrate (W). The concentrations of water contained in the cleaning liquid and in the rinsing liquid are 3 wt % by weight or less.
    Type: Application
    Filed: October 14, 2016
    Publication date: October 18, 2018
    Inventors: Yasushi Fujii, Takayuki Toshima
  • Patent number: 10096462
    Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: October 9, 2018
    Assignees: Toshiba Memory Corporation, Tokyo Electron Limited
    Inventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii, Takayuki Toshima
  • Patent number: 10046370
    Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: August 14, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Gentaro Goshi, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii, Takayuki Toshima
  • Publication number: 20180040468
    Abstract: The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to subsequently heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent in the processing liquid and is lower than the boiling point of the removing agent, and a rinsing liquid supplying unit configured to subsequently supply a rinsing liquid to the substrate so as to remove the adhered substance from the substrate.
    Type: Application
    Filed: July 27, 2017
    Publication date: February 8, 2018
    Inventors: Takayuki Toshima, Shoichi Terada, Junji Nakamura
  • Patent number: 9881784
    Abstract: Disclosed is a substrate processing method. The method includes: supplying a rinse liquid, IPA, a first fluorine-containing organic solvent, a second fluorine-containing organic solvent to a wafer within an outer chamber of a liquid processing unit; conveying the wafer to a supercritical processing unit container; and supplying a supercritical processing fluorine-containing organic solvent in a supercritical high-pressure fluid state to the wafer within the supercritical processing unit container. At least during the supply of the IPA, a low-humidity N2 gas is supplied into the outer chamber so that the inside of the outer chamber is formed as a low-humidity N2 gas atmosphere, and thus moisture absorption into the IPA is prevented.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: January 30, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Hiroki Ohno, Keiji Tanouchi, Kazuyuki Mitsuoka, Takehiko Orii, Takayuki Toshima
  • Publication number: 20170320107
    Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.
    Type: Application
    Filed: April 19, 2017
    Publication date: November 9, 2017
    Inventors: Gentaro GOSHI, Kazuyuki MITSUOKA, Gen YOU, Hiroki OHNO, Takehiko ORII, Takayuki TOSHIMA
  • Patent number: 9731322
    Abstract: A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: August 15, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takashi Tanaka, Yusuke Saito, Mitsuaki Iwashita, Takayuki Toshima
  • Patent number: 9662685
    Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: May 30, 2017
    Assignee: Tokyo Electron Limited
    Inventors: Gentaro Goshi, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii, Takayuki Toshima
  • Patent number: 9583330
    Abstract: A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: February 28, 2017
    Assignee: Tokyo Electron Limited
    Inventors: Linan Ji, Hidekazu Hayashi, Hiroshi Tomita, Hisashi Okuchi, Yohei Sato, Takayuki Toshima, Mitsuaki Iwashita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii
  • Patent number: 9421569
    Abstract: A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
    Type: Grant
    Filed: January 13, 2012
    Date of Patent: August 23, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takashi Tanaka, Yusuke Saito, Mitsuaki Iwashita, Takayuki Toshima
  • Publication number: 20160118242
    Abstract: Disclosed is a substrate processing method. The method includes: supplying a rinse liquid, IPA, a first fluorine-containing organic solvent, a second fluorine-containing organic solvent to a wafer within an outer chamber of a liquid processing unit; conveying the wafer to a supercritical processing unit container; and supplying a supercritical processing fluorine-containing organic solvent in a supercritical high-pressure fluid state to the wafer within the supercritical processing unit container. At least during the supply of the IPA, a low-humidity N2 gas is supplied into the outer chamber so that the inside of the outer chamber is formed as a low-humidity N2 gas atmosphere, and thus moisture absorption into the IPA is prevented.
    Type: Application
    Filed: October 14, 2015
    Publication date: April 28, 2016
    Inventors: Hiroki Ohno, Keiji Tanouchi, Kazuyuki Mitsuoka, Takehiko Orii, Takayuki Toshima
  • Patent number: 9236280
    Abstract: Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: January 12, 2016
    Assignee: Tokyo Electron Limited
    Inventors: Takayuki Toshima, Mitsuaki Iwashita, Yuji Kamikawa, Mikio Nakashima