Patents by Inventor Takayuki Toshima

Takayuki Toshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130333726
    Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.
    Type: Application
    Filed: June 5, 2013
    Publication date: December 19, 2013
    Inventors: Gentaro GOSHI, Kazuyuki MITSUOKA, Gen YOU, Hiroki OHNO, Takehiko ORII, Takayuki TOSHIMA
  • Publication number: 20130302525
    Abstract: A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
    Type: Application
    Filed: January 13, 2012
    Publication date: November 14, 2013
    Applicant: Tokyo Electron Limited
    Inventors: Takashi Tanaka, Yusuke Saito, Mitsuaki Iwashita, Takayuki Toshima
  • Patent number: 8465596
    Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: June 18, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Takayuki Toshima, Mitsuaki Iwashita, Kazuyuki Mitsuoka, Hidekazu Okamoto, Hideo Namatsu
  • Patent number: 8434423
    Abstract: Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.
    Type: Grant
    Filed: February 2, 2010
    Date of Patent: May 7, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Takayuki Toshima, Kazuo Terada
  • Patent number: 8372212
    Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: February 12, 2013
    Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited
    Inventors: Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Hidekazu Hayashi, Yukiko Kitajima, Takayuki Toshima, Mitsuaki Iwashita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii
  • Publication number: 20130019905
    Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
    Type: Application
    Filed: March 15, 2012
    Publication date: January 24, 2013
    Inventors: Linan JI, Hidekazu Hayashi, Hiroshi Tomita, Hisashi Okuchi, Yohei Sato, Takayuki Toshima, Mitsuaki Iwashita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii
  • Publication number: 20120304485
    Abstract: A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.
    Type: Application
    Filed: May 29, 2012
    Publication date: December 6, 2012
    Applicants: Tokyo Electron Limited, Kabushiki Kaisha Toshiba
    Inventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Mitsuaki Iwashita, Takehiko Orii, Gen You, Hiroki Ohno, Takayuki Toshima
  • Patent number: 8303724
    Abstract: Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.
    Type: Grant
    Filed: August 9, 2011
    Date of Patent: November 6, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Koukichi Hiroshiro, Yuji Kamikawa, Takayuki Toshima, Naoki Shindo
  • Publication number: 20120247516
    Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
    Type: Application
    Filed: February 9, 2012
    Publication date: October 4, 2012
    Inventors: Yohei SATO, Hisashi OKUCHI, Hiroshi TOMITA, Hidekazu HAYASHI, Yukiko KITAJIMA, Takayuki TOSHIMA, Mitsuaki IWASHITA, Kazuyuki MITSUOKA, Gen YOU, Hiroki OHNO, Takehiko ORII
  • Patent number: 8235061
    Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: August 7, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Takayuki Toshima, Kazuo Terada, Kazuyuki Honda
  • Publication number: 20120164339
    Abstract: Disclosed are a substrate liquid processing apparatus and a substrate liquid processing method that performs a water-repelling process for a substrate with a water-repellent liquid, and a computer readable recording medium having a substrate liquid processing program. A first diluted water-repellent liquid is generated by mixing a first diluting liquid capable of diluting the water-repellent liquid without hydrolysis and the water-repellent liquid in a mixing tank, and a water-repelling process is performed for a substrate with the first diluted water-repellent liquid. A second diluting liquid capable of diluting the water-repellent liquid is supplied to a middle portion of a first supply path supplying the first diluted water-repellent liquid from the mixing tank.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 28, 2012
    Inventors: Mitsunori NAKAMORI, Hidetomo Uemukai, Takayuki Toshima
  • Patent number: 8206785
    Abstract: A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: June 26, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Takayuki Toshima, Mitsuaki Iwashita, Takashi Tanaka, Yusuke Saito
  • Publication number: 20120132230
    Abstract: Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 31, 2012
    Inventors: Takayuki Toshima, Mitsuaki Iwashita, Yuji Kamikawa, Mikio Nakashima
  • Publication number: 20110290280
    Abstract: Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.
    Type: Application
    Filed: August 9, 2011
    Publication date: December 1, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Koukichi HIROSHIRO, Yuji Kamikawa, Takayuki Toshima, Naoki Shindo
  • Publication number: 20110265718
    Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
    Type: Application
    Filed: July 12, 2011
    Publication date: November 3, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kenichi Hara, Mitsuaki Iwashita, Takashi Tanaka, Takayuki Toshima, Takehiko Orii
  • Patent number: 8015984
    Abstract: Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: September 13, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Koukichi Hiroshiro, Yuji Kamikawa, Takayuki Toshima, Naoki Shindo
  • Publication number: 20110214694
    Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.
    Type: Application
    Filed: March 3, 2011
    Publication date: September 8, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki TOSHIMA, Mitsuaki IWASHITA, Kazuyuki MITSUOKA, Hidekazu OKAMOTO, Hideo NAMATSU
  • Patent number: 8003509
    Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: August 23, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Kenichi Hara, Mitsuaki Iwashita, Takashi Tanaka, Takayuki Toshima, Takehiko Orii
  • Patent number: 7998306
    Abstract: The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: August 16, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Koukichi Hiroshiro, Hideyuki Yamamoto, Kazuhiro Takeshita, Takayuki Toshima
  • Patent number: 7998308
    Abstract: A liquid processing apparatus includes a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate and to rotate along with the substrate; a liquid supply mechanism configured to supply a process liquid onto at least a front surface of the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining out of the rotary cup; and a guide member disposed to surround the substrate, having an upper surface to be substantially continued to the front surface of the substrate, and configured to rotate along with the substrate holding member and the rotary cup, such that a process liquid supplied onto the front surface of the substrate and thrown off from the substrate is guided by the upper surface of the guide member from the rotary cup to the exhaust/drain section.
    Type: Grant
    Filed: April 17, 2007
    Date of Patent: August 16, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Satoshi Kaneko, Kazuhisa Matsumoto, Norihiro Ito, Masami Akimoto, Takayuki Toshima, Hiromitsu Nanba