Abstract: An anomaly detection device includes: at least one memory configured to store instructions; and at least one processor configured to execute the instructions to: cluster a plurality of power storage systems into a plurality of clusters; generate a detection model for detecting an anomaly in the power storage systems for each of the clusters; and detect an anomaly in the power storage system for each of the clusters by using the detection model associated with the cluster.

Abstract: An information processing apparatus according to the present invention includes: a prediction value calculation unit configured to, based on a model calculating an objective variable representing a state of a target by using a plurality of explanatory variables, for each of the explanatory variables, calculate a prediction value of the explanatory variable that changes based on a value of the explanatory variable at a predetermined moment; and a change quantity calculation unit configured to, for each of the explanatory variables, calculate a quantity of change of the objective variable with change of the explanatory variable by using the prediction value of the explanatory variable and the model.

Abstract: The present invention provides an anomaly analysis method, an anomaly analysis program, and an anomaly analysis system that display an anomaly degree for each group of sensors in a plurality of hierarchies and facilitate the determination of the factor of an anomaly. An anomaly analysis system according to an example embodiment of the present invention has: a group generation unit that generates a group of sensors for each hierarchy of a plurality of hierarchies; a group anomaly degree calculation unit that calculates a group anomaly degree for each group from measurement values of the sensors included in the group; and a display control unit that performs control of displaying a time-series change of the group anomaly degree in any hierarchy of the plurality of hierarchies.

Abstract: An information processing device according to the present invention includes: a memory; and at least one processor coupled to the memory. The processor performs operations. The operations includes: extracting a feature of a period or a frequency in a plurality of pieces of time-series data acquired by measuring an object; classifying the pieces of time-series data into a group related to the feature; generating, for each of the groups, a model that represents a relationship among the pieces of time-series data classified into the group; and selecting the model in which strength of the relationship satisfies a predetermined condition.

Abstract: An anomaly detection device includes: at least one memory configured to store instructions; and at least one processor configured to execute the instructions to: cluster a plurality of power storage systems into a plurality of clusters; generate a detection model for detecting an anomaly in the power storage systems for each of the clusters; and detect an anomaly in the power storage system for each of the clusters by using the detection model associated with the cluster.

Abstract: Provided is a manufacturing process analysis device (30), comprising: a computation unit (31) which computes, in a process in which a manufactured object is manufactured, invariant compliance strengths for each shift time for manufacturing condition values (360) and quality values (361) which are measured in time series; a shift time specification unit (32) which derives, as a specified shift time, a shift time for which the invariant compliance strengths satisfy a baseline; and an analysis unit (33) which analyzes the state of the manufacturing process on the basis of the quality value and the manufacturing condition value for the time which is earlier by the specified shift time than the time at which the quality value is measured.

Abstract: Disclosed are an indicator calculation device and the like capable of calculating a preferable evaluation indicator even when a relevance among a plurality of evaluation indicators relating to a target system is unclear. An indicator calculation device executes a predetermined processing on a given range of a plurality of evaluation indicators for a target system and model information representing a relevance between the evaluation indicators and a parameter and, thereby, specifies ranges of the parameter in case that the plurality of the evaluation indicators are within the given range. The indicator calculation device executes a predetermined indicator calculation processing on the specified ranges of the parameter and target model information representing the model information regarding a target evaluation indicator for the target system and, thereby, calculates a characteristic value representing a character of the target evaluation indicator.

Abstract: Provided is a manufacturing process analysis device (30), comprising: a computation unit (31) which computes, in a process in which a manufactured object is manufactured, invariant compliance strengths for each shift time for manufacturing condition values (360) and quality values (361) which are measured in time series; a shift time specification unit (32) which derives, as a specified shift time, a shift time for which the invariant compliance strengths satisfy a baseline; and an analysis unit (33) which analyzes the state of the manufacturing process on the basis of the quality value and the manufacturing condition value for the time which is earlier by the specified shift time than the time at which the quality value is measured.

Abstract: The present invention provides a method of selectively extracting metallic armchair carbon nanotubes alone from the mixture of carbon nanotubes of mixed chiralities, wherein vacant lattice defects are removed from armchair carbon nanotubes alone using the fact that the vacant lattice defects of zigzag carbon nanotubes are hard to diffuse in the axial direction of nanotubes compared with those of armchair carbon nanotubes. Since vacant lattice defects remaining on zigzag carbon nanotubes are active, the tube structures are easily destroyed and decomposed by oxidation etc. Thus it is possible to extract armchair carbon nanotubes alone from the mixture of carbon nanotubes of mixed chiralities.

Abstract: The present invention provides a method of selectively extracting metallic armchair carbon nanotubes alone from the mixture of carbon nanotubes of mixed chiralities, wherein vacant lattice defects are removed from armchair carbon nanotubes alone using the fact that the vacant lattice defects of zigzag carbon nanotubes are hard to diffuse in the axial direction of nanotubes compared with those of armchair carbon nanotubes. Since vacant lattice defects remaining on zigzag carbon nanotubes are active, the tube structures are easily destroyed and decomposed by oxidation etc. Thus it is possible to extract armchair carbon nanotubes alone from the mixture of carbon nanotubes of mixed chiralities.

Abstract: According to the present invention, there are provided a novel graphite-like three-dimensional structure which has a partial structure bent-up with such a steeper curvature than that observed for a carbonaceous material having a conventional nanosize three-dimensional structure such as fullerene and nanotube, has such a feature as light weight and high mechanical strength, as well as a process for manufacturing the same.

Abstract: To realize a transistor with a channel and a gate, both being formed with nanotubes, by joining the nanotubes in the form of SP3 bonding, a substrate, on which a pair of source and drain electrodes 27, and a gate terminal 28 are formed, is prepared (Fig. (a)), and then a catalytic layer 20 is formed at the one of the source and drain electrodes 27 (Fig. (b)). A first CNT 23 is formed (Fig. (d)) between the pair of source and drain electrodes 27 by growing the CNT (Fig. (c)) in which the catalytic layer 20 is a core. A second CNT 24 is picked by a holding means 25, and after a cap is eliminated and an opening portion is cleaned using the electron beam as needed, the opening portion is contacted to the side of the first CNT 23, thereby joining the two CNT (fig. (e)). The other end portion of the second CNT 24 is positioned at the gate terminal 28 (Fig. (f)). End portions of the CNT are fixed on the electrodes and the terminal by selectively irradiating metallic ion.