Patents by Inventor Takehiko Kishi
Takehiko Kishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128948Abstract: A resonance device that includes: a first substrate having a first silicon substrate and a resonator, wherein the resonator includes a single-crystal silicon film and a first silicon oxide film interposed between the single-crystal silicon film and the first silicon substrate, and a through hole that passes through the single-crystal silicon film and the first silicon oxide film; a second substrate opposite the first substrate; a frame shaped bonding portion that bonds the first substrate to the second substrate to seal a vibration space of the resonator; and a first blocking member disposed in an interior of the through hole and surrounding a vibration portion of the resonator in a plan view of the first substrate so as to divide the first silicon oxide film, wherein the first blocking member has a lower helium permeability than the first silicon oxide film.Type: ApplicationFiled: December 28, 2023Publication date: April 18, 2024Inventors: Masakazu FUKUMITSU, Yoshiyuki HIGUCHI, Takehiko KISHI
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Patent number: 11629046Abstract: A MEMS device is provided that includes a piezoelectric film, a first electrode and a second electrode sandwiching the piezoelectric film, a protective film that covers at least part of the second electrode and having a cavity that opens part of the second electrode, a third electrode that contacts the second electrode at least in the cavity and is provided so as to cover at least part of the protective film, and a first wiring layer having a first contact portion in contact with the third electrode.Type: GrantFiled: May 28, 2020Date of Patent: April 18, 2023Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Keiichi Umeda, Tadayuki Okawa, Taku Kamoto, Yuichi Goto, Yoshihisa Inoue, Takehiko Kishi
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Publication number: 20230008378Abstract: A resonance device is provided that includes a lower lid that has a recessed portion, and a resonator that is mounted on the lower lid and has a vibration arm that performs out-of-plane bending vibration in a space including the recessed portion and a frame provided around the vibration arm and having a facing portion facing a tip of the vibration arm. The facing portion of the frame is located in an outer-side portion of the resonator with respect to a straight line connecting an intersection point of a perpendicular extending from the tip of the vibration arm toward the recessed portion of the lower lid and the recessed portion of the lower lid, to a cavity edge of the recessed portion facing the tip of the vibration arm.Type: ApplicationFiled: September 7, 2022Publication date: January 12, 2023Inventors: Masakazu FUKUMITSU, Takehiko KISHI
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Publication number: 20220231663Abstract: A resonance device is provided that includes a lower cover; an upper cover coupled to the lower cover; and a resonator that has vibration arms that generate bending vibration in an interior space provided between the lower cover and the upper cover. Moreover, the vibration arms have distal ends provided with metal films on a side that faces the upper cover, and a gap is provided between the distal ends of the vibration arms and the upper cover that is larger than a gap between the distal ends of the vibration arms and the lower cover.Type: ApplicationFiled: April 6, 2022Publication date: July 21, 2022Inventors: Masakazu FUKUMITSU, Takehiko KISHI, Yoshiyuki HIGUCHI
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Publication number: 20200290865Abstract: A MEMS device is provided that includes a piezoelectric film, a first electrode and a second electrode sandwiching the piezoelectric film, a protective film that covers at least part of the second electrode and having a cavity that opens part of the second electrode, a third electrode that contacts the second electrode at least in the cavity and is provided so as to cover at least part of the protective film, and a first wiring layer having a first contact portion in contact with the third electrode.Type: ApplicationFiled: May 28, 2020Publication date: September 17, 2020Inventors: Keiichi Umeda, Tadayuki Okawa, Taku Kamoto, Yuichi Goto, Yoshihisa Inoue, Takehiko Kishi
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Patent number: 10374569Abstract: A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.Type: GrantFiled: March 30, 2018Date of Patent: August 6, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada, Masakazu Fukumitsu
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Patent number: 10291202Abstract: A vibration device that includes a support member, vibration arms connected to the support member and each having an n-type Si layer which is a degenerate semiconductor, and electrodes provided so as to excite the vibration arms, and silicon oxide films containing impurities in contact with a respective lower surface of the n-type Si layers of each vibration arm.Type: GrantFiled: March 17, 2016Date of Patent: May 14, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Hiroshi Yamada, Keiichi Umeda, Takehiko Kishi, Toshio Nishimura
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Publication number: 20180226937Abstract: A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.Type: ApplicationFiled: March 30, 2018Publication date: August 9, 2018Inventors: Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada, Masakazu Fukumitsu
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Patent number: 9905748Abstract: A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (?0.0003x2?0.0256x+0.0008)±0.05.Type: GrantFiled: November 12, 2015Date of Patent: February 27, 2018Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toshio Nishimura, Keiichi Umeda, Takashi Hase, Keisuke Takeyama, Takehiko Kishi, Hiroshi Yamada
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Patent number: 9866199Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (?0.0002x2?0.0136x+0.0014)±0.05.Type: GrantFiled: November 10, 2015Date of Patent: January 9, 2018Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toshio Nishimura, Takashi Hase, Keisuke Takeyama, Hiroaki Kaida, Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada
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Patent number: 9584093Abstract: A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.Type: GrantFiled: November 5, 2015Date of Patent: February 28, 2017Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toshio Nishimura, Takashi Hase, Keisuke Takeyama, Hiroaki Kaida, Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada
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Patent number: 9553561Abstract: A vibrating device having vibrating arms connected to a supporter. The vibrating arms have an n-type Si layer which is a degenerated semiconductor and an exciter provided on the n-type Si layer. The exciter has a piezoelectric thin film and a first and second electrodes with the piezoelectric thin film interposed therebetween.Type: GrantFiled: March 10, 2015Date of Patent: January 24, 2017Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Keiichi Umeda, Takehiko Kishi, Toshio Nishimura, Takashi Hase
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Publication number: 20160197597Abstract: A vibration device that includes a support member, vibration arms connected to the support member and each having an n-type Si layer which is a degenerate semiconductor, and electrodes provided so as to excite the vibration arms, and silicon oxide films containing impurities in contact with a respective lower surface of the n-type Si layers of each vibration arm.Type: ApplicationFiled: March 17, 2016Publication date: July 7, 2016Inventors: Hiroshi Yamada, Keiichi Umeda, Takehiko Kishi, Toshio Nishimura
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Publication number: 20160072473Abstract: A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.Type: ApplicationFiled: November 5, 2015Publication date: March 10, 2016Inventors: Toshio Nishimura, Takashi Hase, Keisuke Takeyama, Hiroaki Kaida, Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada
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Publication number: 20160064642Abstract: A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (?0.0003x2?0.0256x+0.0008)±0.05.Type: ApplicationFiled: November 12, 2015Publication date: March 3, 2016Inventors: TOSHIO NISHIMURA, Keiichi Umeda, Takashi Hase, Keisuke Takeyama, Takehiko Kishi, Hiroshi Yamada
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Publication number: 20160065173Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (?0.0002x2?0.0136x+0.0014)±0.05.Type: ApplicationFiled: November 10, 2015Publication date: March 3, 2016Inventors: TOSHIO NISHIMURA, Takashi Hase, Keisuke Takeyama, Hiroaki Kaida, Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada
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Publication number: 20150180449Abstract: A vibrating device having vibrating arms connected to a supporter. The vibrating arms have an n-type Si layer which is a degenerated semiconductor and an exciter provided on the n-type Si layer. The exciter has a piezoelectric thin film and a first and second electrodes with the piezoelectric thin film interposed therebetween.Type: ApplicationFiled: March 10, 2015Publication date: June 25, 2015Inventors: Keiichi Umeda, Takehiko Kishi, Toshio Nishimura, Takashi Hase