Abstract: A method of manufacturing an optical apparatus having an optical element, a holding member, and a base member includes preparing the holding member and fixing the optical element to the first member. The method further includes fixing a second member of the holding member to the base member and plastically deforming a first member of the holding member and the second member to adjust the position of the optical element.

Abstract: A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.

Abstract: A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.

Abstract: A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.

Abstract: A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.

Abstract: A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.

Abstract: A method of manufacturing electrode foil for aluminum electrolytic capacitors and an AC power supply unit used therewith are disclosed. An etching is performed on an aluminum foil immersed in an electrolytic solution by applying an AC current to a pair of electrodes in the electrolytic solution. A waveform of the AC current is a deformed sine wave including a period of time (a) when an electric current rises from zero to a peak value, and another period of time (b) when the electric current falls from the peak value to zero. With the periods of time (a) and (b) made different from each other, the surface area of the aluminum foil is efficiently expanded by the etching and an enhancement of electric capacity of the electrode foil is obtained.

Abstract: The present invention relates to a solid electrolytic capacitor having a large capacitance and a higher resistance to heat and adapted as a surface-mount device and a method of producing the same. The invention may include the followings features: (1) a layer containing an electroconductive polymer and a less conductive polymer is provided on a dielectric oxide film on the positive electrode foil; (2) a separator of a polyester resin based unwoven fabric made by span bonding and/or wet processing a resin material is sandwiched between the positive electrode foil and the negative electrode foil and rolled together to form a capacitor element which also include a solid electrolyte; (3) a separator is sandwiched between the positive electrode foil and the negative electrode foil coated with a dielectric oxide film exhibiting a withstand voltage of 0.

Abstract: A method of manufacturing electrode foil for aluminum electrolytic capacitors and an AC power supply unit used therewith. An etching is performed on an aluminum foil immersed in a electrolytic solution by applying an AC current to a pair of electrodes in the electrolytic solution. A waveform of the AC current is a deformed sine wave including a period of time (a) when an electric current rises from zero to a peak value, and another period of time (b) when the electric current falls from the peak value to zero. With the periods of time (a) and (b) made different from each other, the surface area of the aluminum foil is expanded by the etching efficiently and an enhancement of electric capacity of the electrode foil is obtained.

Abstract: A light transmission type vacuum separating window for separating a vacuum area into a plurality of vacuum areas through a film that transmits the light of a wavelength area such as an X-ray area and an infrared ray area. This vacuum separating window includes a thin film that transmits the light. The vacuum area is separated into the plurality of vacuum areas through this thin film. The light is any one of an X-ray, an infrared ray, a visible ray and an ultraviolet ray. A metal or an alloy that turns out a liquid in a range of temperature of a using environment may be provided between the thin film and the support member for supporting the thin film. This metal is preferably gallium. The alloy preferably contains gallium and, more preferably, consists of 75.5 weight % gallium and 24.5 weight % indium.

Abstract: This invention relates to a method and apparatus for analyzing a plurality of elements that are present on the surface of a material of interest or in its neighborhood, as well as a thin-film forming apparatus that is capable of measuring the composition of a sample during thin film formation in the process of semi-conductor fabrication. The apparatus are characterized in that a detector is isolated from the light and heat generated in a sample making mechanism by means of a shield which is not only heat-resistant but also transmissive of fluorescent X-ray containing soft X-rays of 1 Kev and below and that a mirror for total reflection of X-rays which is equipped with slits capable of adjusting the incident and exit angles of fluorescent X-rays from the sample excited with an excitation source as well as the ranges of those angles is provided either at the entrance or exit of said shield or at both.