Patents by Inventor Takehito Okabe
Takehito Okabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11945474Abstract: A driving assistance apparatus configured to support a driving of a vehicle at a time of pulling out of the vehicle, the driving assistance apparatus including: a control section configured to determine a movement path from a parking space to a predetermined position of a road region, and run the vehicle along the movement path on a basis of surroundings information of the vehicle when pulling out the vehicle from the parking space to the road region, wherein the control section leaves an accelerator operation for the vehicle to a user while automatically controlling a steering operation for the vehicle at least in a section in the movement path, and switches from an automated driving mode to a manual driving mode in response to the steering operation that is performed by the user when the vehicle travels in the section.Type: GrantFiled: May 25, 2021Date of Patent: April 2, 2024Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Takehito Sato, Atsushi Nojiri, Satoshi Fukumoto, Yoshimasa Okabe
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Patent number: 11682686Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.Type: GrantFiled: December 22, 2021Date of Patent: June 20, 2023Assignee: Canon Kabushiki KaishaInventors: Toshiyuki Ogawa, Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Yukinobu Suzuki, Akihiro Kawano, Tsutomu Tange
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Patent number: 11329093Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.Type: GrantFiled: April 3, 2020Date of Patent: May 10, 2022Assignee: Canon Kabushiki KaishaInventors: Shinji Kodaira, Takehito Okabe, Mitsuhiro Yomori, Nobuyuki Endo, Tomoyuki Tezuka, Toshihiro Shoyama, Jun Iwata
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Publication number: 20220115429Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Inventors: Toshiyuki Ogawa, Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Yukinobu Suzuki, Akihiro Kawano, Tsutomu Tange
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Patent number: 11244978Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.Type: GrantFiled: October 14, 2019Date of Patent: February 8, 2022Assignee: Canon Kabushiki KaishaInventors: Toshiyuki Ogawa, Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Yukinobu Suzuki, Akihiro Kawano, Tsutomu Tange
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Patent number: 11121160Abstract: Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.Type: GrantFiled: October 15, 2019Date of Patent: September 14, 2021Assignee: Canon Kabushiki KaishaInventors: Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Takuya Hara, Keita Torii, Yukinobu Suzuki, Tomoyuki Tezuka, Norihiko Nakata, Daichi Seto, Kenji Togo
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Publication number: 20200235157Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.Type: ApplicationFiled: April 3, 2020Publication date: July 23, 2020Inventors: Shinji Kodaira, Takehito Okabe, Mitsuhiro Yomori, Nobuyuki Endo, Tomoyuki Tezuka, Toshihiro Shoyama, Jun Iwata
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Patent number: 10658421Abstract: A method of manufacturing a photoelectric conversion apparatus includes heating a semiconductor substrate while a pixel circuit area is covered with an insulator film, performing ion implantation into the pixel circuit area through the insulator film, performing ion implantation into a peripheral circuit area after the heating, and forming a side wall on a side surface of a gate electrode of a transistor after the performing ion implantation into the peripheral circuit area.Type: GrantFiled: August 28, 2018Date of Patent: May 19, 2020Assignee: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Mitsuhiro Yomori, Nobuaki Kakinuma, Toshihiro Shoyama, Masashi Kusukawa
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Patent number: 10644055Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.Type: GrantFiled: July 9, 2018Date of Patent: May 5, 2020Assignee: Canon Kabushiki KaishaInventors: Shinji Kodaira, Takehito Okabe, Mitsuhiro Yomori, Nobuyuki Endo, Tomoyuki Tezuka, Toshihiro Shoyama, Jun Iwata
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Publication number: 20200127031Abstract: Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.Type: ApplicationFiled: October 15, 2019Publication date: April 23, 2020Inventors: Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Takuya Hara, Keita Torii, Yukinobu Suzuki, Tomoyuki Tezuka, Norihiko Nakata, Daichi Seto, Kenji Togo
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Publication number: 20200127030Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.Type: ApplicationFiled: October 14, 2019Publication date: April 23, 2020Inventors: Toshiyuki Ogawa, Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Yukinobu Suzuki, Akihiro Kawano, Tsutomu Tange
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Patent number: 10475829Abstract: A semiconductor apparatus includes a conductive member including a polycrystalline silicon layer having a first, second and third portions, an interlayer insulation film that covers the conductive member, a first silicon nitride layer arranged between the interlayer insulation film and the third portion, a second silicon nitride layer arranged between the interlayer insulation film and the first portion and between the interlayer insulation layer and the second portion, a first contact plug disposed above the first portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member, and a second contact plug disposed above the second portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member. The first silicon nitride layer is disposed between the first and second contact plugs, and apart from the first and second contact plugs.Type: GrantFiled: July 3, 2018Date of Patent: November 12, 2019Assignee: CANON KABUSHIKI KAISHAInventors: Mitsuhiro Yomori, Takehito Okabe, Nobuaki Kakinuma, Takashi Okagawa
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Patent number: 10411058Abstract: A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.Type: GrantFiled: December 20, 2017Date of Patent: September 10, 2019Assignee: Canon Kabushiki KaishaInventors: Tsutomu Tange, Yukinobu Suzuki, Aiko Kato, Koji Hara, Takehito Okabe
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Publication number: 20190267421Abstract: Image capturing device includes semiconductor substrate having photoelectric converters in light-receiving area and light-shielded area, insulating film arranged above principal face of the substrate and having holes arranged above the photoelectric converters, waveguide portions arranged in the holes, connecting portion connecting the waveguide portions above the insulating film, light-shielding film arranged on the connecting portion having opening in the light-receiving area, SiN film arranged on the light-shielding film so that the opening is arranged between the SiN film and the substrate in the light-receiving area, and insulator film having portion located in the opening and having portion located between the light-shielding film and the SiN film. Distance between upper face of the light-shielding film and the principal face is smaller than distance between lower face of the SiN film and the principal face.Type: ApplicationFiled: February 19, 2019Publication date: August 29, 2019Inventors: Sho Suzuki, Mitsuhiro Yomori, Takehito Okabe, Takashi Okagawa
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Patent number: 10319765Abstract: An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.Type: GrantFiled: June 14, 2017Date of Patent: June 11, 2019Assignee: CANON KABUSHIKI KAISHAInventors: Taro Kato, Akira Okita, Takehito Okabe, Takeru Ohya, Kosuke Asano, Koichiro Iwata, Seiichirou Sakai
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Publication number: 20190067364Abstract: A method of manufacturing a photoelectric conversion apparatus includes heating a semiconductor substrate while a pixel circuit area is covered with an insulator film, performing ion implantation into the pixel circuit area through the insulator film, performing ion implantation into a peripheral circuit area after the heating, and forming a side wall on a side surface of a gate electrode of a transistor after the performing ion implantation into the peripheral circuit area.Type: ApplicationFiled: August 28, 2018Publication date: February 28, 2019Inventors: Takehito Okabe, Mitsuhiro Yomori, Nobuaki Kakinuma, Toshihiro Shoyama, Masashi Kusukawa
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Publication number: 20190019833Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.Type: ApplicationFiled: July 9, 2018Publication date: January 17, 2019Inventors: Shinji Kodaira, Takehito Okabe, Mitsuhiro Yomori, Nobuyuki Endo, Tomoyuki Tezuka, Toshihiro Shoyama, Jun Iwata
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Publication number: 20190019825Abstract: A semiconductor apparatus includes a conductive member including a polycrystalline silicon layer having a first, second and third portions, an interlayer insulation film that covers the conductive member, a first silicon nitride layer arranged between the interlayer insulation film and the third portion, a second silicon nitride layer arranged between the interlayer insulation film and the first portion and between the interlayer insulation layer and the second portion, a first contact plug disposed above the first portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member, and a second contact plug disposed above the second portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member. The first silicon nitride layer is disposed between the first and second contact plugs, and apart from the first and second contact plugs.Type: ApplicationFiled: July 3, 2018Publication date: January 17, 2019Inventors: Mitsuhiro Yomori, Takehito Okabe, Nobuaki Kakinuma, Takashi Okagawa
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Publication number: 20180182802Abstract: A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.Type: ApplicationFiled: December 20, 2017Publication date: June 28, 2018Inventors: Tsutomu Tange, Yukinobu Suzuki, Aiko Kato, Koji Hara, Takehito Okabe
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Patent number: 10008528Abstract: A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.Type: GrantFiled: September 22, 2016Date of Patent: June 26, 2018Assignee: Canon Kabushiki KaishaInventors: Hiroshi Ikakura, Nobutaka Ukigaya, Jun Iba, Taro Kato, Takehito Okabe