Patents by Inventor Takekazu Yamane

Takekazu Yamane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220131020
    Abstract: An electrode structure includes: a metal film with an opening formed in a part of the metal film; and a transparent conductive film disposed in the opening, wherein the transparent conductive film is electronically connected to an element and overlaps with the element as viewed in a plan view in a thickness direction of the transparent conductive film.
    Type: Application
    Filed: October 25, 2021
    Publication date: April 28, 2022
    Applicant: TDK CORPORATION
    Inventors: Tomohito MIZUNO, Takekazu YAMANE, Hideaki FUKUZAWA, Tetsuya SHIBATA
  • Patent number: 10957962
    Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: March 23, 2021
    Assignee: TDK CORPORATION
    Inventors: Takekazu Yamane, Tetsuya Shibata, Tsuyoshi Suzuki, Junichiro Urabe, Atsushi Shimura
  • Patent number: 10804870
    Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: October 13, 2020
    Assignee: TDK CORPORATION
    Inventor: Takekazu Yamane
  • Publication number: 20200274511
    Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
    Type: Application
    Filed: May 14, 2020
    Publication date: August 27, 2020
    Applicant: TDK CORPORATION
    Inventor: Takekazu YAMANE
  • Patent number: 10680570
    Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: June 9, 2020
    Assignee: TDK CORPORATION
    Inventor: Takekazu Yamane
  • Patent number: 10608309
    Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: March 31, 2020
    Assignee: TDK CORPORATION
    Inventors: Takekazu Yamane, Junichiro Urabe, Tsuyoshi Suzuki, Atsushi Shimura
  • Patent number: 10483458
    Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: November 19, 2019
    Assignee: TDK CORPORATION
    Inventors: Junichiro Urabe, Tetsuya Shibata, Atsushi Shimura, Takekazu Yamane, Tsuyoshi Suzuki
  • Patent number: 10439592
    Abstract: A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: October 8, 2019
    Assignee: TDK CORPORATION
    Inventors: Naomichi Degawa, Takekazu Yamane
  • Patent number: 10381997
    Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: August 13, 2019
    Assignee: TDK CORPORATION
    Inventors: Tetsuya Shibata, Junichiro Urabe, Atsushi Shimura, Takekazu Yamane
  • Publication number: 20190245254
    Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.
    Type: Application
    Filed: October 23, 2017
    Publication date: August 8, 2019
    Applicant: TDK CORPORATION
    Inventors: Takekazu YAMANE, Tetsuya SHIBATA, Tsuyoshi SUZUKI, Junichiro URABE, Atsushi SHIMURA
  • Patent number: 10332666
    Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: June 25, 2019
    Assignee: TDK CORPORATION
    Inventors: Takekazu Yamane, Junichiro Urabe, Tsuyoshi Suzuki, Atsushi Shimura
  • Publication number: 20190081606
    Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
    Type: Application
    Filed: September 6, 2018
    Publication date: March 14, 2019
    Applicant: TDK CORPORATION
    Inventor: Takekazu YAMANE
  • Publication number: 20190044500
    Abstract: A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.
    Type: Application
    Filed: July 27, 2018
    Publication date: February 7, 2019
    Applicant: TDK CORPORATION
    Inventors: Naomichi DEGAWA, Takekazu YAMANE
  • Publication number: 20180315535
    Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.
    Type: Application
    Filed: April 25, 2018
    Publication date: November 1, 2018
    Applicant: TDK CORPORATION
    Inventors: Takekazu YAMANE, Junichiro URABE, Tsuyoshi SUZUKI, Atsushi SHIMURA
  • Publication number: 20180316077
    Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.
    Type: Application
    Filed: April 25, 2018
    Publication date: November 1, 2018
    Applicant: TDK CORPORATION
    Inventors: Takekazu YAMANE, Junichiro URABE, Tsuyoshi SUZUKI, Atsushi SHIMURA
  • Publication number: 20180309046
    Abstract: Magnetoresistive effect device including magnetoresistive effect element which high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including magnetization fixed, spacer, and magnetization free layer wherein magnetization direction is changeable; first and second ports; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. Closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. Magnetoresistive effect element is arranged wherein direct current input from direct-current input terminal flows through magnetoresistive effect element in direction from magnetization fixed layer to magnetization free layer.
    Type: Application
    Filed: June 2, 2016
    Publication date: October 25, 2018
    Applicant: TDK CORPORATION
    Inventors: Junichiro URABE, Tetsuya SHIBATA, Atsushi SHIMURA, Takekazu YAMANE, Tsuyoshi SUZUKI
  • Publication number: 20180277749
    Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.
    Type: Application
    Filed: June 2, 2016
    Publication date: September 27, 2018
    Applicant: TDK CORPORATION
    Inventors: Junichiro URABE, Tetsuya SHIBATA, Atsushi SHIMURA, Takekazu YAMANE, Tsuyoshi SUZUKI
  • Patent number: 10074688
    Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: September 11, 2018
    Assignee: TDK CORPORATION
    Inventors: Tetsuya Shibata, Tsuyoshi Suzuki, Junichiro Urabe, Takekazu Yamane, Atsushi Shimura
  • Publication number: 20180159492
    Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.
    Type: Application
    Filed: January 12, 2018
    Publication date: June 7, 2018
    Applicant: TDK CORPORATION
    Inventors: Tetsuya SHIBATA, Junichiro URABE, Atsushi SHIMURA, Takekazu YAMANE
  • Patent number: 9966922
    Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: May 8, 2018
    Assignee: TDK CORPORATION
    Inventors: Tetsuya Shibata, Junichiro Urabe, Takekazu Yamane, Tsuyoshi Suzuki