Patents by Inventor Takeo Furuhata

Takeo Furuhata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040064291
    Abstract: A system for predicting life of a rotary machine, includes a vibration gauge configured to measure time series data of a peak acceleration of the rotary machine; a band pass filter configured to filter an analog signal of the time series data of the peak acceleration measured by the vibration gauge in a frequency band including a first analysis frequency expressed as a product of an equation including a number of rotor blades of the rotary machine and a normal frequency unique to the rotary machine; and a data processing unit configured to predict a life span of the rotary machine by characteristics of the filtered analog data of the time series data of the peak acceleration with the first analysis frequency.
    Type: Application
    Filed: April 18, 2003
    Publication date: April 1, 2004
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shuichi Samata, Yukihiro Ushiku, Akihito Yamamoto, Takashi Nakao, Takeo Furuhata
  • Publication number: 20040064212
    Abstract: A method for predicting life of a rotary machine used in a manufacturing apparatus, includes: determining a starting time of an abnormal condition just before a failure of a monitor rotary machine used in a monitor manufacturing process, from monitor time-series data for characteristics of the monitor rotary machine, statistically analyzing the monitor time-series data, and finding a value for the characteristics at the starting time of the abnormal condition as a threshold of the abnormal condition; measuring diagnosis time-series data for the characteristic of a motor current of a diagnosis rotary machine during a manufacturing process; preparing diagnosis data from the diagnosis time-series data; and determining a time for the diagnosis data exceeding the threshold as the life of the diagnosis rotary machine.
    Type: Application
    Filed: January 3, 2003
    Publication date: April 1, 2004
    Inventors: Shuichi Samata, Yukihiro Ushiku, Takashi Nakao, Takeo Furuhata
  • Publication number: 20040064277
    Abstract: A manufacturing apparatus which includes a rotary machine, includes: a plurality of accelerometers configured to measure diagnosis time series data attached to the rotary machine at locations where variations of the rotary machine are different; a frequency analysis device configured to perform a frequency analysis on the diagnosis time series data measured by the plurality of accelerometers; a time series data recording module configured to generate diagnosis data based on variations in characteristics of vibration corresponding to an analysis target frequency and to record the diagnosis data; and a life prediction unit configured to analyze the diagnosis data to determine a life span of the rotary machine.
    Type: Application
    Filed: March 19, 2003
    Publication date: April 1, 2004
    Inventors: Shuichi Samata, Takeo Furuhata, Yukihiro Ushiku, Akihito Yamamoto, Takashi Nakao
  • Patent number: 6713359
    Abstract: SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: March 30, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ichiro Mizushima, Shigehiko Saida, Takeo Furuhata, Yoshitaka Tsunashima
  • Publication number: 20040041179
    Abstract: SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.
    Type: Application
    Filed: September 5, 2003
    Publication date: March 4, 2004
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ichiro Mizushima, Shigehiko Saida, Takeo Furuhata, Yoshitaka Tsunashima
  • Publication number: 20030153997
    Abstract: A method for predicting life span of a rotary machine used in a manufacturing apparatus, includes: measuring rotary machine acceleration evaluation time series data with a sampling interval being less than a half the cycle of an analysis target frequency, a number of samplings being at least four times the analysis target frequency; generating evaluation diagnosis data based on variations in characteristics corresponding to the analysis target frequency by subjecting the evaluation time series data to frequency analysis; and determining the life span of the rotary machine using the evaluation diagnosis data.
    Type: Application
    Filed: August 28, 2002
    Publication date: August 14, 2003
    Inventors: Shuichi Samata, Yukihiro Ushiku, Takeo Furuhata, Takashi Nakao, Ken Ishii