Patents by Inventor Takeru Amano

Takeru Amano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10830951
    Abstract: An optical circuit includes a substrate, a waveguide, and a mirror. The substrate includes a first surface. The waveguide includes a first core. The first core is formed of a semiconductor material. The waveguide is over a first surface of the substrate. The mirror reflects light emitted from the waveguide in a direction away from the first surface of the substrate. The mirror is a concave mirror. The waveguide includes a region that functions as an SSC.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: November 10, 2020
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Akihiro Noriki, Takeru Amano
  • Publication number: 20190339450
    Abstract: An optical circuit includes a substrate, a waveguide, and a mirror. The substrate includes a first surface. The waveguide includes a first core. The first core is formed of a semiconductor material. The waveguide is over a first surface of the substrate. The mirror reflects light emitted from the waveguide in a direction away from the first surface of the substrate. The mirror is a concave mirror. The waveguide includes a region that functions as an SSC.
    Type: Application
    Filed: October 16, 2017
    Publication date: November 7, 2019
    Inventors: Akihiro NORIKI, Takeru AMANO
  • Patent number: 8039369
    Abstract: There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 ?m. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As2.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: October 18, 2011
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventor: Takeru Amano
  • Publication number: 20080318355
    Abstract: There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 ?m. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As2.
    Type: Application
    Filed: August 27, 2008
    Publication date: December 25, 2008
    Applicant: Nat Inst of Adv Industrial Sci and Tech
    Inventor: Takeru AMANO
  • Publication number: 20060043395
    Abstract: There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 ?m. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As2.
    Type: Application
    Filed: August 25, 2005
    Publication date: March 2, 2006
    Applicant: National Inst of Adv Industrial Science and Tech
    Inventor: Takeru Amano