Abstract: The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), wherein R1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L8? represents the partial structure represented by the following formula (i), 0?o<1, 0<p?1 and o+p=1, wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L0 represents a divalent organic group.

Abstract: The present invention provides a silicon-containing polymer which contains a repeating unit shown by the general formula (1-3) and one or more repeating units selected from repeating units shown by the general formulae (1-1) and (1-2) as a partial structure. There can be provided a composition for forming a silicon-containing resist under layer film, and a silicon-containing polymer and a silicon-containing compound to give the composition that is capable of forming a resist under layer film improved in adhesiveness in any resist pattern, regardless of negative development or positive development.

Abstract: The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3). There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.

Abstract: A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent, W?X)n ??(1) W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10, The dotted line represents a bonding arm. R01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Abstract: The present invention provides a method for reducing a metal of a sugar-alcohol compound, the method including the steps of (A) protecting a hydroxyl group of a sugar-alcohol compound containing metal impurities with a protecting group, (B) removing the metal impurities from the sugar-alcohol compound having the hydroxyl group protected with the protecting group, and (C) eliminating the protecting group of the sugar-alcohol compound from which the metal has been removed. There can be provided a method for reducing a metal of a sugar-alcohol compound that can provide a sugar-alcohol compound with a suitable quality for the semiconductor apparatus manufacturing process.

Abstract: The invention provides a polymer for a resist under layer film composition, containing a repeating unit shown by the formula (1) and a repeating unit shown by the formula (3), wherein R01 independently represents a hydrogen atom or a methyl group; R02 represents a group selected from the formulae (1-1) to (1-3); R03 represents a saturated or unsaturated tertiary alkyl group having 4 to 20 carbon atoms and optionally containing an oxygen functional group; and A2 represents a single bond or a divalent linking group having 2 to 10 carbon atoms and containing an ester group, wherein the dotted line represents a bonding arm.

Abstract: A method for producing a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end, a polymerization initiator for use in the method, and a precursor of the polymerization initiator are provided.

Abstract: A method for producing a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end, a polymerization initiator for use in the method, and a precursor of the polymerization initiator are provided.

Abstract: A compound for forming an organic film shown by the formula (1A), R—(—X)m1 ??(1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and ml represents an integer satisfying 2?m1?10, wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.

Abstract: The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.

Abstract: The present invention provides a fluorine-containing silicon compound represented by the general formula (1), wherein each R1 independently represents a hydrocarbon group having 1 to 6 carbon atoms; each R2 independently represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; and n is an integer satisfying 0?n?2. There can be provided a fluorine-containing silicon compound having good storage stability and useful as a raw material of a composition for forming a silicon-containing intermediate film and a silicon-containing photoresist composition used for a fine processing in the manufacturing process of a semiconductor device.

Abstract: The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3). There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.

Abstract: A quaternary ammonium salt compound is represented by the following formula (A-1), wherein, R1, R2, and R3 each represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), and these groups may include one or more of an ether bond, a carbonyl group, an ester bond, and an amide bond; and A? represents a non-nucleophilic counter ion.

Abstract: An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.

Abstract: The invention provides a polymer for a resist under layer film composition, containing a repeating unit shown by the formula (1) and a repeating unit shown by the formula (3), wherein R01 independently represents a hydrogen atom or a methyl group; R02 represents a group selected from the formulae (1-1) to (1-3); R03 represents a saturated or unsaturated tertiary alkyl group having 4 to 20 carbon atoms and optionally containing an oxygen functional group; and A2 represents a single bond or a divalent linking group having 2 to 10 carbon atoms and containing an ester group, wherein the dotted line represents a bonding arm. There can be provided a polymer for a resist under layer film composition that is capable of forming a resist under layer film having good alkali aqueous hydrogen peroxide resistance, excellent filling and planarizing properties, and excellent dry etching property.

Abstract: The present invention provides a silicon-containing polymer which contains a repeating unit shown by the general formula (1-3) and one or more repeating units selected from repeating units shown by the general formulae (1-1) and (1-2) as a partial structure. There can be provided a composition for forming a silicon-containing resist under layer film, and a silicon-containing polymer and a silicon-containing compound to give the composition that is capable of forming a resist under layer film improved in adhesiveness in any resist pattern, regardless of negative development or positive development.

Abstract: The present invention provides a fluorine-containing silicon compound represented by the general formula (1), wherein each R1 independently represents a hydrocarbon group having 1 to 6 carbon atoms; each R2 independently represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; and n is an integer satisfying 0?n?2. There can be provided a fluorine-containing silicon compound having good storage stability and useful as a raw material of a composition for forming a silicon-containing intermediate film and a silicon-containing photoresist composition used for a fine processing in the manufacturing process of a semiconductor device.

Abstract: The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.

Abstract: A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst.

Abstract: A method for producing a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end, a polymerization initiator for use in the method, and a precursor of the polymerization initiator are provided.