Patents by Inventor Takeshi Fukunaga

Takeshi Fukunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200231098
    Abstract: A vehicular auxiliary machine is disposed between seats arranged side by side in a vehicular width direction of a vehicle body. A bracket is a member on which the vehicular auxiliary machine is mounted, and which is fixed to the vehicle body. The vehicular auxiliary machine includes a harness connecting portion disposed in such a way as to locate on a side of one of the seats. The bracket includes a base surface and a pair of vertical wall portions. Further, the bracket includes a rib spanning between a harness connecting portion and the base surface, on a harness-side vertical wall portion of the paired vertical wall portions close to the harness connecting portion.
    Type: Application
    Filed: February 6, 2018
    Publication date: July 23, 2020
    Applicant: MAZDA MOTOR CORPORATION
    Inventors: Yohsuke TAKENAGA, Takeshi FUKUNAGA, Hisakazu KONISHI
  • Patent number: 10658898
    Abstract: A method for manufacturing a neutral ring includes connecting a cut-off neutral ring to an arc-shaped connection element. The method also includes filling an insulator between the cut-off neutral ring and a connection element. The neutral ring shunts the rotor coil in three phases.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: May 19, 2020
    Assignee: Hitachi Industrial Products, Ltd.
    Inventors: Yasushi Hayasaka, Masanori Matsumoto, Yasunori Otsuki, Tetsuo Fujigaki, Yoshihiro Yasui, Motonobu Iizuka, Masaaki Endou, Atsushi Fukunaga, Takeshi Nakayama
  • Patent number: 10632526
    Abstract: The primary object of the present invention is to provide a mold for continuous casting including a temperature detection unit which can detect the temperature of a copper plate of the mold with high precision, and can be easily inserted into and pulled out of the copper plate. The present invention includes: a main body; and a temperature detection unit which is inserted in an insertion hole in the main body, and detects temperature inside the mold. The temperature detection unit includes: an FBG sensor inserted in a protection tube which can be deformed in a radial direction; and a support member which supports the FBG sensor along the longitudinal direction. At a temperature detection point, the protection tube in which the FBG sensor is inserted is held between a stretched member in the support member and an inner surface of the insertion hole.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: April 28, 2020
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Tatsuro Honda, Nozomu Yoshihiro, Shinichi Fukunaga, Takeshi Okawa
  • Publication number: 20200111590
    Abstract: A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a Nd—Fe—B film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 5 Nd/(Nd+Fe)<0.150, which corresponds to a compositional range in the vicinity of a stoichiometric composition.
    Type: Application
    Filed: February 28, 2017
    Publication date: April 9, 2020
    Inventors: Masaki Nakano, Hirotoshi Fukunaga, Takeshi Yanai, Hironobu Sawatari
  • Patent number: 10597771
    Abstract: A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 ?m or less, the Nd content satisfies the conditional expression of 0.15?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 ?m to 115 ?m (but excluding 70 ?m), the Nd content satisfies the conditional expression of 0.18?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 ?m to 160 ?m (but excluding 115 ?m), the Nd content satisfies the conditional expression of 0.20?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 ?m and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: March 24, 2020
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventors: Masaki Nakano, Hirotoshi Fukunaga, Takeshi Yanai, Hironobu Sawatari
  • Publication number: 20190355449
    Abstract: The current health information and the biological information are synchronized and associated with each other. The biological information collection system includes a health information input device 1 and a biological information collection device 2. The health information input device 1 inputs health information indicating a health condition of a certain date and time and first time information indicating the certain date and time. The biological information collection device 2 acquires biological information, and collects the biological information in association with the second time information indicating the acquired date and time.
    Type: Application
    Filed: May 1, 2019
    Publication date: November 21, 2019
    Inventor: Takeshi FUKUNAGA
  • Patent number: 9843015
    Abstract: A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: December 12, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Patent number: 9837451
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: December 5, 2017
    Assignee: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 9659524
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: May 23, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20170137930
    Abstract: An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source is used in which an evaporation cell, or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate. By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased.
    Type: Application
    Filed: January 27, 2017
    Publication date: May 18, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi FUKUNAGA
  • Publication number: 20170084861
    Abstract: A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
    Type: Application
    Filed: November 30, 2016
    Publication date: March 23, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Patent number: 9559302
    Abstract: An organic material for a light emitting device is deposited over a substrate by evaporating the organic material from an evaporation source. The evaporation source comprises a plurality of discrete evaporation cells separated from each other, wherein each of the plurality of discrete evaporation cells contains the organic material. The evaporation source has a length along a first direction and a width along a second direction orthogonal to the first direction, the length being greater than the width. The plurality of discrete evaporation cells is arranged along the first direction. When the organic material is evaporated, a relative location of the evaporation source with respect to the substrate is changed along the second direction, and the evaporation of the organic material is initiated by heating the plurality of discrete evaporation cells.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: January 31, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Patent number: 9515098
    Abstract: A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: December 6, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Publication number: 20160268309
    Abstract: A light-emitting device having the quality of an image high inhomogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is'used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
    Type: Application
    Filed: May 26, 2016
    Publication date: September 15, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Takeshi FUKUNAGA
  • Patent number: 9419066
    Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: August 16, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Fukunaga, Junya Maruyama
  • Publication number: 20160197105
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Application
    Filed: March 17, 2016
    Publication date: July 7, 2016
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Patent number: 9368517
    Abstract: A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: June 14, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Patent number: 9293483
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: March 22, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO. LTD.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20150187822
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Application
    Filed: March 11, 2015
    Publication date: July 2, 2015
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Publication number: 20150171329
    Abstract: An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source is used in which an evaporation cell, or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate. By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased.
    Type: Application
    Filed: February 27, 2015
    Publication date: June 18, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga