Patents by Inventor Takeshi Fukunaga

Takeshi Fukunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7998844
    Abstract: A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: August 16, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang
  • Patent number: 7989812
    Abstract: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.
    Type: Grant
    Filed: April 5, 2006
    Date of Patent: August 2, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga
  • Patent number: 7978190
    Abstract: In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other between the first substrate 101 and the second substrate 105. By this, it is possible to make the area of the first substrate 101 minimum.
    Type: Grant
    Filed: August 13, 2007
    Date of Patent: July 12, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Yoshiharu Hirakata, Takeshi Fukunaga
  • Publication number: 20110101852
    Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
    Type: Application
    Filed: January 7, 2011
    Publication date: May 5, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takeshi Fukunaga, Junya Maruyama
  • Publication number: 20110090209
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Application
    Filed: November 29, 2010
    Publication date: April 21, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Patent number: 7919341
    Abstract: There is provided a thin film forming apparatus for precisely forming a film of an organic EL material made of a polymer without a positional deviation and at a high throughput. A pixel portion is divided into a plurality of pixel lines by banks, and a head portion of the thin film forming apparatus is moved along the pixel lines, so that a coating liquid (R), a coating liquid (G), and a coating liquid (B) can be applied respectively in a stripe shape at the same time. Then, luminescent layers emitting lights of respective colors of red, green and blue can be formed by heating these coating liquids.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: April 5, 2011
    Assignee: Semiconductor Energy laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga
  • Publication number: 20110012818
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Application
    Filed: September 28, 2010
    Publication date: January 20, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Patent number: 7867053
    Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: January 11, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Fukunaga, Junya Maruyama
  • Patent number: 7843407
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Grant
    Filed: September 24, 2007
    Date of Patent: November 30, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 7821200
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: October 18, 2007
    Date of Patent: October 26, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 7820464
    Abstract: The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.
    Type: Grant
    Filed: March 20, 2009
    Date of Patent: October 26, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga, Jun Koyama, Kazutaka Inukai
  • Patent number: 7812351
    Abstract: A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: October 12, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akiharu Miyanaga, Jun Koyama, Takeshi Fukunaga
  • Publication number: 20100255184
    Abstract: To provide a film deposition apparatus capable of forming an EL element of high reliability. An oxidization cell (205) is placed in a liquid phase film deposition chamber (109) such as a spin coater. The oxidization cell is provided with an oxygen gettering agent (209) comprised of an element that belongs to Group 1 or 2 of the periodic table. The oxygen gettering agent (209) is oxidized consuming oxygen in the atmosphere of the chamber, to thereby reduce the oxygen concentration in the atmosphere to 1 ppb or less. This makes it possible to form an EL element in a substantially oxygen-less state, greatly improving the reliability of the EL element.
    Type: Application
    Filed: April 14, 2010
    Publication date: October 7, 2010
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Takeshi Fukunaga
  • Patent number: 7807500
    Abstract: A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: October 5, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Takeshi Fukunaga
  • Publication number: 20100200999
    Abstract: A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.
    Type: Application
    Filed: April 21, 2010
    Publication date: August 12, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Takeshi FUKUNAGA
  • Patent number: 7767559
    Abstract: A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: August 3, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisashi Ohtani, Takeshi Fukunaga, Akiharu Miyanaga
  • Patent number: 7745993
    Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: June 29, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Fukunaga, Junya Maruyama
  • Publication number: 20100159124
    Abstract: A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.
    Type: Application
    Filed: January 13, 2010
    Publication date: June 24, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Takeshi FUKUNAGA
  • Publication number: 20100144111
    Abstract: A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.
    Type: Application
    Filed: February 16, 2010
    Publication date: June 10, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Takeshi FUKUNAGA
  • Patent number: 7727898
    Abstract: A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.
    Type: Grant
    Filed: December 2, 2005
    Date of Patent: June 1, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga