Abstract: A magnetic random access memory includes: a first and second wirings, a plurality of third wirings, a plurality of memory cells and a terminating unit. The first and second wirings extend in a Y direction. The plurality of third wirings extends in an X direction. The memory cell is provided correspondingly to an intersection between the first and second wirings and the third wiring. The terminating unit is provided between the plurality of memory cells and connected to the first and second wirings. The memory cell includes transistors and a magnetoresistive element. The transistors are connected in series between the first and second wirings and controlled based on a signal of the third wiring. The magnetoresistive element is connected to a wiring through which the transistors are connected. At a time of a writing operation, when the write current Iw is supplied from one of the first and second wiring to the other through the transistors, the terminating unit grounds the other.

Abstract: Improvements on a system for treating residual water, presents a new solution for the conformation of a system for treating residual water and for such purpose, it basically consists of a lower blanket (1), preferably produced in PVC, and of a cover blanket (2), which is also preferably produced in PVC, in any color, which may be double-faced, including, in the present model still features a reactor (3), a deep chamber (4) and an anaerobic pond (5), and such elements may be excavated in the soil (S) or made of stonemasonry or any kind of suitable material for this purpose.

Abstract: An MRAM having a first cell array group (2-0) and a second cell array group (2-1) containing a plurality of cell arrays (21) is used. Each of the first cell array group (2-0) and the second cell array group (2-1) includes a first current source unit for supplying a first write current IWBL to a bit line WBL of the cell array (21) and a first current waveform shaping unit having a first capacitor requiring precharge and shaping the waveform of the first write current IWBL. When the cell array (21) performs write into a magnetic memory (24), the first current waveform shaping unit of the first cell array group (2-0) and the first current waveform shaping unit of the second cell array group (2-1) charges and discharges electric charge accumulated in the first capacitor to wiring toward the bit line WBL at different periods from each other.

Abstract: An operation method of an MRAM of the present invention is an operation method of the MRAM in which a data write operation is carried out in a toggle write.

Abstract: The present invention relates to a benzylphenyl glucopyranoside derivative having an excellent inhibitory effect on human SGLT1 and/or SGLT2 activity. There is provided a compound or a pharmacologically acceptable salt thereof represented by the following general formula (I): wherein R1 represents a hydrogen atom, an amino group, a hydroxy C1-C6 alkyl group, etc.; R2 represents a hydrogen atom, etc.; R3 represents a C1-C6 alkyl group, a hydroxy C1-C6 alkyl group, etc.; R4 represents a hydrogen atom, a C2-C7 acyl group, etc.; R5, R6, R7, and R8 are the same or different and each represents a hydrogen atom or a C1-C6 alkyl group, provided that R5, R6, R7 and R8 are not hydrogen atoms at the same time; n is 0 to 4; and X is CH or N.

Abstract: An operation method of a MRAM of the present invention stores in memory arrays, error correction codes, each of which comprises of symbols, each of which comprises bits, and to which an error correction is possible in units of symbols. In the operation method, the symbols are read by using the reference cells different from each other. Moreover, when a correctable error is detected in a read data of the error correction code from data cells corresponding to an input address, (A) a data in the data cell corresponding to an error bit is corrected, for a first error symbol as an error pattern of one bit, and (B) a data in the reference cell that is used to read a second error symbol is corrected for a second error symbol as en error pattern of the bits.

Abstract: An MRAM is provided with a memory main body (2) having at least one cell array, and a magnetic field detecting section (4) which detects a magnetic field in the vicinity of the memory main body (2) and outputs the detection signal to the memory main body (2). In the cell array, a memory main body (2), which has a plurality of magnetic memory cells including a multilayer ferri-structure as a free layer, stops a prescribed operation of the memory main body (2), based on the detection signal.

Abstract: A semiconductor memory device is provided with a memory array including memory cells arranged in rows and columns; and a sense amplifier circuit. Each of the memory cells includes at least one magnetoresistive element storing data, and an amplifying member used to amplify a signal generated by a current through the at least one magnetoresistive element. The sense amplifier circuit identifies data stored in the at least one magnetoresistive element in response to an output signal of the amplifying member.

Abstract: The present invention relates to a novel cercosporamide derivative, a pharmacologically acceptable salt thereof or an ester thereof which has an excellent hypoglycemic effect and is useful as a therapeutic and/or prophylactic agent for diabetes.

Abstract: A toggle magnetic random access memory includes a first memory array, a second memory array and a controller. The first memory array includes a plurality of first memory cells including magnetoresistive elements. The second memory array includes a plurality of second memory cells including magnetoresistive elements and differs from the first memory array in write wirings used for writing. The controller controls the first memory array and the second memory array such that a first state in which a first burst write operation in the first memory array is executed and a second state in which a second burst write operation in the second memory array is executed are alternately executed in a continuous burst write mode. Accordingly, the continuous burst write operation can be executed at the high speed without any drop in the reliability and any increase in the circuit area.

Abstract: For achieving a fluidic device, being able to be made small in sizes, comprising a fluid inflow opening 1, a connector duct 2, and a fluid jet nozzle, wherein the connector duct 2 is constructed with curves, and is further constructed with two (2) pieces of flow passages, being symmetric on both sides. Constructing the connector duct with the curves reduces resistance of fluid within the duct, and further dividing the connector duct into two (2) parts in both side enhances the flows at confluent point in the duct (increase of the flow velocity).

Abstract: A data transmission apparatus transmits, in response to a permission signal received from a higher-level data receiver, a required amount of data to the data receiver in a burst. The required amount of data is determined by data transmission control. Data transmission between the apparatus and the data receiver is effected at a preselected timing in such a manner as to absorb a difference between the amount of data to be transmitted over a preselected management time period and the data amount indicated by an expected control value. For this purpose, the apparatus calculates an adequate amount of data to be transmitted over the management time period as a unit amount. The apparatus then manages the maximum amount of data to be transmitted over the management time period for thereby leveling the amounts of data transmitted. This successfully enhances accurate data transmission.

Abstract: A semiconductor memory device of the present invention comprises a memory array and a read circuit that reads data of a selected cell. The memory array includes a plurality of memory cells and a reference cell each having a memory element that stores data based on change in resistance value. The read circuit includes: a voltage comparison unit that compares a value corresponding to a sense current from the selected cell with a value corresponding to a reference current from the reference cell; a first switch; and a second switch. Both of the first and second switches are provided at a subsequent stage of a decoder and at a preceding stage of the voltage comparison unit. The second switch circuit controls input of the value corresponding to the sense current to the voltage comparison unit, while the first switch circuit controls input of the value corresponding to the reference current to the voltage comparison unit.

Abstract: An MRAM has a plurality of bit lines, a reference bit line, a plurality of memory cells and reference cells and a read section. The memory cells are provided along the bit lines and the reference cells along the reference bit line. The memory cell and reference cell have a tunneling magnetic resistance and a reference tunneling magnetic resistance, each of which has a spontaneous magnetization whose direction is reversed in accordance with data stored therein. The read section has a first resistance section which contains a ninth terminal connected with a bit line and a tenth terminal connected with the first power supply, a second resistance section which contains an eleventh terminal connected with the reference bit line and a twelfth terminal connected with the first power supply, and a comparing section which compares a sense voltage on the ninth terminal and a reference voltage of the eleventh terminal.

Abstract: A MRAM includes: first wirings, second wirings, memory cells, a second sense amplifier and a first sense amplifier. The first wirings and second wirings are extended in a first and a second direction. The memory cells are placed correspondingly to positions where the first wirings are crossed with the second wirings. The second sense amplifier detects a state of a reference cell on the basis of an output from the reference cell provided by corresponding to a reference wiring. The first sense amplifier (2) detects a state of the memory cell on the basis of an output from the reference cell and an output from the memory cell. The memory cell includes a magnetic tunneling junction element having a laminated free layer. The magnetic tunneling junction element has a magnetization easy axis direction which is different from the first and second directions.

Abstract: A magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13).

Abstract: Compounds having the formula (I): wherein A represents a group such as a cyclic group, R1 and R2 represent groups such as alkyl groups or hydroxymethyl groups, and n represents 1 or 2, or pharmacologically acceptable salts thereof or pharmacologically acceptable esters thereof have superior activity and stability, and are useful for the treatment and/or prevention of diabetes mellitus, or the like.

Abstract: A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.

Abstract: Compounds having the formula (I): wherein A represents a group such as a cyclic group, R1 and R2 represent groups such as alkyl groups or hydroxymethyl groups, and n represents 1 or 2, or pharmacologically acceptable salts thereof or pharmacologically acceptable esters thereof have superior activity and stability, and are useful for the treatment and/or prevention of diabetes mellitus, or the like.

Abstract: A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.