Abstract: As an aspect of the present invention, a cleaning apparatus for cleaning member has a holding part holding a cleaning member assembly having a cleaning member; an inner cleaning liquid supply part; an outer cleaning liquid supply part; and a control part controlling the substrate cleaning apparatus to perform a first process in which the cleaning member is pressed against a dummy substrate at a first pressure and the outer cleaning liquid supply part supplies the cleaning liquid to the dummy substrate, and to perform a second process in which the cleaning member is separated from the dummy substrate or is pressed against the dummy substrate at a second pressure which is equal to or less than the first pressure and the inner cleaning liquid supply part supplies the cleaning liquid.

Abstract: The present invention relates to a metal interconnect structure containing no barrier metal and a method of manufacturing the metal interconnect structure. The method includes: filling at least a first interconnect trench with an intermetallic compound by depositing the intermetallic compound on an insulating layer having the first interconnect trench and a second interconnect trench formed in the insulating layer, the second interconnect trench being wider than the first interconnect trench; performing a planarization process of polishing the intermetallic compound until the insulating layer is exposed; and then performing a height adjustment process of polishing the intermetallic compound and the insulating layer until a height of the intermetallic compound in the first interconnect trench reaches a predetermined height.

Abstract: A cleaning device includes: a substrate rotation mechanism that holds and rotates a substrate around center axis thereof; a first single-tube nozzle that discharges first cleaning liquid toward a top surface of the substrate; and a second single-tube nozzle that discharges second cleaning liquid toward the top surface of the substrate. The first single-tube nozzle and the second single-tube nozzle are disposed such that the second single-tube nozzle discharges the second cleaning liquid in a forward direction of a rotation direction of the substrate at a position farther away from the center of the substrate than a landing position of the first cleaning liquid, and a part is generated in which liquid flow on the top surface of the substrate after landing of the first cleaning liquid and liquid flow on the top surface of the substrate after landing of the second cleaning liquid are combined.

Abstract: The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. The present invention further relates to a computer-readable storage medium storing a program for causing the polishing apparatus to perform the polishing method. The polishing method includes: rotating a polishing table (3); and polishing a substrate (W) by pressing the substrate (W) against a polishing surface (2a). Polishing the substrate (W) includes a film-thickness profile adjustment process and a polishing-end-point detection process. The film-thickness profile adjustment process includes adjusting pressing forces on the substrate (W) against the polishing surface (2a) based on a plurality of film thicknesses, and determining a point in time at which a film-thickness index value has reached a film-thickness threshold value. The film-thickness index value is determined from at least one of the plurality of film thicknesses.

Abstract: As an aspect of the present invention, a cleaning apparatus for cleaning member has a holding part 100 holding a cleaning member assembly 1 having a cleaning member 90; an inner cleaning liquid supply part 110; an outer cleaning liquid supply part 120; and a control part 350 controlling the substrate cleaning apparatus to perform a first process in which the cleaning member 90 is pressed against a dummy substrate Wd at a first pressure and the outer cleaning liquid supply part 120 supplies the cleaning liquid to the dummy substrate Wd, and to perform a second process in which the cleaning member 90 is separated from the dummy substrate Wd or is pressed against the dummy substrate Wd at a second pressure which is equal to or less than the first pressure and the inner cleaning liquid supply part 110 supplies the cleaning liquid.

Abstract: A substrate processing apparatus includes a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner.

Abstract: A substrate processing apparatus includes a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner.

Abstract: A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

Abstract: A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

Abstract: A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

Abstract: A method of polishing a wafer having a Ru film and a Ta film or TaN film beneath the Ru film is provided. This polishing method includes: polishing the Ru film by bringing the wafer into sliding contact with a polishing pad; measuring a thickness of the Ru film by a film thickness sensor while polishing the Ru film; calculating a derivative value of an output value of the film thickness sensor; detecting a predetermined point of change in the derivative value; and determining a removal point of the Ru film from a point of time when the point of change is detected.

Abstract: A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

Abstract: A method of polishing a substrate includes: performing a first polishing process of bringing the substrate into sliding contact with a polishing pad on a first polishing table to polish a metal film; performing a second polishing process of bringing the substrate into sliding contact with a polishing pad on a second polishing table to polish the metal film until a conductive film is exposed; performing a third polishing process of bringing the substrate into sliding contact with a polishing pad on a third polishing table to polish at least the conductive film; and performing a fourth polishing process of bringing the substrate into sliding contact with a polishing pad on a fourth polishing table to polish at least a dielectric film.

Abstract: An electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member including an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member includes an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.

Abstract: An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.

Abstract: There are provided an electrolytic processing apparatus and an electrolytic processing method which can regenerate an ion exchanger with an enhanced regeneration rate of ion-exchange capacity without adversely affecting the throughput of the apparatus. The electrolytic processing apparatus includes: a holder for holding a workpiece; an electrode section including an electrode, a contact member, and a discharge portion for discharging metal ions which have been taken from the workpiece into the contact member during processing, said electrode section coming close to or into contact with the workpiece held by the holder to effect processing of the workpiece in the presence of a liquid; and a regeneration dummy electrode which can come close to or into contact with the contact member.

Abstract: The present invention provides an electrolytic processing apparatus and an electrolytic processing method which can effectively prevent the formation of pits that would impair the quality of the processed product. The electrolytic processing apparatus including: a processing electrode (210) for processing a workpiece; a feeding electrode (212) for feeding electricity to the workpiece; a power source (232) for applying a voltage between the processing electrode (210) and the feeding electrode (212); a pressure tight container (200) housing the processing electrode (210) and the feeding electrode (212) therein; and a high-pressure liquid supply system (204) for supplying a high-pressure liquid into the pressure tight container (210).

Abstract: An electrolytic processing apparatus can maintain a difference in electric resistance between a recessed portion and a raised portion in the surface of a workpiece, thereby providing a processed surface with improved flatness.

Abstract: The present invention provides an electrolytic processing apparatus and an electrolytic processing method which can perform processing of a substrate without destroying devices formed in the substrate even when a fragile material is employed in the substrate and which can reduce non-uniformity in the contact pressure of an electrode member on a substrate during processing, thereby equalizing the processing amount in the entire processing surface of the substrate and the surface roughness after processing. The electrolytic processing apparatus includes: a substrate holder for holding a substrate; an electrode base provided with an electrode member for contact with the substrate, held by the substrate holder, in the presence of a liquid to effect processing of the substrate; and a support base for floatingly supporting the electrode base by a floating mechanism.

Abstract: A object of this invention is to provide an electrolytic processing method and apparatus that can suppress a change in the electric conductivity of a fluid due to contaminants, such as processing products produced in electrolytic processing, so that the fluid can maintain good flattening properties.