Abstract: There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.

Abstract: A control system for controlling a display device mounted on a vehicle includes: a first control device for controlling the display device to display a first information image corresponding to a specific event when the specific event occurs; and a second control device for controlling the display device to display a second information image corresponding to the specific event after the display device displays the first information image. The second control device changes a display start time of the second information image according to at least one of a driving condition of the vehicle and a driver condition of a driver of the vehicle.

Abstract: The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

Abstract: A display system equipped to a vehicle includes a display screen, a notification section, a determination section, and a display control section. The display screen displays information for a vehicle occupant. The notification section preliminarily notifies the vehicle occupant of an information update to be performed on the display screen. The determination section determines whether the vehicle occupant pays attention to the display screen after the notification section notifies of the information update. The display control section performs the information update in order to display new information on the display screen when the determination section determines that the vehicle occupant pays attention to the display screen.

Abstract: An in-vehicle display apparatus includes a control unit for executing a selected application feature for controlling a control object device. The selected application feature may be one of a plurality of application features that is selected by a driver by using switches on a portion of a vehicle steering wheel. The in-vehicle display apparatus displays output contents of the application feature in a main display area together with vehicle information. When no operation is performed for controlling the application feature for a predetermined period of time, or when the driver selects an other application feature, the control unit executes the application feature that is currently running in a background, treating it as a background (BG) application feature, and displays a BG icon for a BG application feature associated switch that is operable for an operation of the BG application feature that is currently running in the background.

Abstract: In an input apparatus, a display portion displays a plurality of function items on a screen to form a plurality of rows that are parallel in a predetermined row direction. The function items are provided with selection regions, respectively. One of the selection regions is selected, using a pointer according to a predetermined selection manipulation, and is determined according to a predetermined determination manipulation. When a first function item in a first row of the plurality of rows is selected, a selection region of the first row is enlarged in a direction directing at a row next to the first row.

Abstract: A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector, a plurality of active layers causing a gain by current injection, and an upper reflector are provided on a substrate, includes an n-type spacer layer formed between the lower reflector and an active layer closest to the lower reflector in the plurality of active layers, a p-type spacer layer formed between the upper reflector and an active layer closest to the upper reflector in the plurality of active layers, and an intermediate layer arranged between the plurality of active layers. The intermediate layer is configured from an Mg-doped layer including at least Mg, and a nitride semiconductor layer including In, and the Mg-doped layer and the nitride semiconductor layer including In are provided in that order from a side of the substrate.

Abstract: A vehicle display apparatus includes a display panel to be placed at a position where a driver visually recognizes the display panel and to display information related to vehicle traveling status. The display panel includes a first display area for displaying a first information and a second display area for displaying second information. The vehicle display apparatus further includes a first display control portion for obtaining the first information, and a second display control portion for obtaining the second information and displaying the second information. A vehicle display apparatus includes the display panel which has a third display area for displaying third information and a fourth display area for displaying fourth information. The vehicle display apparatus further includes a third display control portion and a fourth display control portion.

Abstract: A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.

Abstract: An operation surface detects a touch point specified by an operator. An imaging area obtains a hand image of the operator. A fingertip detection unit detects a fingertip of the hand image. A display device includes a display screen having coordinates uniquely corresponding to the operation surface and the imaging area. The display device indicates the fingertip and an operation panel specific to an in-vehicle electronic device to be operated. An interface engine having a prescribed interface relationship between an input, which is specified by at least one of the touch point and the fingertip, and an output to be outputted to the in-vehicle electronic device according to a combination of the input and the interface relationship. An alteration unit alters the interface relationship according to a detected traveling state of the vehicle.

Abstract: A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.

Abstract: Provided are a heat exchanger that does not impede downsizing and removes water in the heat absorbing pipe adequately with a simple configuration even when the reduction in diameter of the heat absorbing pipe is made. A heat exchanger 5 in which heat absorbing pipes 51 are disposed in a multi-tier arrangement within a casing 50 which is the passage of combustion exhaust gas, both pipe ends 511,512 of each of the heat absorbing pipes 51 are connected respectively to two headers 54, 55 provided on a side plate 52 of the casing 50, and water introduced from an external pipe 63 to each of the heat absorbing pipes 51 through the header 54 is heat-exchanged and heated by combustion exhaust gas. The pipe ends 511, 512 of the heat absorbing pipes 51 are arranged at a predetermined vertical interval.

Abstract: A user interface device detects a fingertip placed on an imaging range. The imaging range is located or arranged so that a user inserts and place a hand along a predetermined direction. A device detects a tip area corresponding to the fingertip from the imaging range. The device determines whether the detected tip area is a finger or not. The determination can be performed by evaluating a size of the tip area, for example, whether the width is in an appropriate range or not. If the tip area is verified as a finger, a position of the fingertip is calculated. According to the device, it is possible to determine whether it is a finger or not by using a relatively simple algorithm. As a result, it is possible to eliminate objects other than finger and to provide sufficient accuracy for detecting the fingertip.

Abstract: Provided is a diagnosis method for an oil-filled electrical apparatus, which is for evaluating the degree of danger of copper sulfide being generated within the oil-filled electrical apparatus, comprising: a first step for detecting a specific compound contained within insulating oil inside the oil-filled electrical apparatus; a second step for evaluating the possibility of copper sulfide being generated inside the oil-filled electrical apparatus, on the basis of the result detected by the first step; and a third step for diagnosing the degree of danger of a malfunction occurring in the oil-filled electrical apparatus, on the basis of the evaluation result obtained in the second step. The specific compound contains dibenzyl disulfide and/or a reaction product of a radical resulting from dibenzyl disulfide, and di-tert-butyl-p-cresol and/or a reaction product of a radical resulting from di-tert-butyl-p-cresol, or, di-tert-butyl-phenol and/or a reaction product of a radical resulting from di-tert-butyl-phenol.

Abstract: A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to occur in an out-of-plane direction, and a light absorber that is provided above the second photonic crystal region and that absorbs light having a wavelength ?. A radiation coefficient of each first photonic crystal region is smaller than a radiation coefficient of the second photonic crystal region.

Abstract: A portable terminal receives a user operation on a terminal screen of the portable terminal in a portable terminal normal mode. After receiving the user operation, the portable terminal shifts from a portable terminal normal mode to a portable terminal in-operation state, in which the portable terminal sends out a portable terminal in-operation notice to an in-vehicle apparatus. The in-vehicle apparatus shifts to a portable terminal in-operation mode upon receiving the notice from the portable terminal, and invalidates a reaction force by a reaction force generation unit to transit to a portable terminal normal state.

Abstract: A control unit indicates a cursor on a screen of an indication unit according to operation data sent from an operation unit based on user's operation of an operation knob. The control unit implements enlarging indication of a screen region corresponding to a selection item image indicated on the screen of the indication unit. When the control unit implements contracting indication to return an enlarged screen region subsequent to the enlarging indication, the control unit indicates contraction of the screen region in a visually recognizable form and indicates the cursor to follow the screen region. The operation unit further causes a driving force generation unit to generate a driving force to move the operation knob correspondingly to the position of the cursor, according to information on the position of the cursor sent from the control unit.

Abstract: By using a virus having a gene sequence comprising a telomerase promoter and an E1 gene (preferably a sequence comprising E1A gene, IRES sequence and E1B gene) or by using an anticancer agent comprising the virus, the virus replicates in cancer cells to thereby produce an efficient anticancer effect.

Abstract: A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

Abstract: The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.