Abstract: The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element.

Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: An element of the present invention includes a silicon substrate; an electrode which is provided on the silicon substrate and which is a sintered product of a paste composition for an electrode containing a phosphorus-containing copper alloy particle, a glass particle, a solvent and a resin; and a solder layer containing a flux, which is provided on the electrode.

Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.

Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.

Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: A conductive material used for connecting electrodes of a solar battery cell and wiring members, the conductive material comprising a resin binder; and a conductive particle dispersed in the resin binder, wherein the conductive particle comprises a phosphorous-containing copper alloy having a phosphorus content of 0.01% by mass or more and 8% by mass or less.

Abstract: The solder bonded body according to the present invention contains: an oxide body to be bonded having an oxide layer on the surface thereof; and a solder layer bonded to the oxide layer, which the solder layer is formed by an alloy containing at least two metals selected from the group consisting of tin, copper, silver, bismuth, lead, aluminum, titanium and silicon and having a melting point of lower than 450° C. and has a zinc content of 1% by mass or less.

Abstract: The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length:electrode height, of from 2:1 to 250:1.

Abstract: The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.

Abstract: The invention provides a photovoltaic cell substrate that is a semiconductor substrate comprising an n-type diffusion layer, an n+-type diffusion layer having a higher n-type impurity concentration than the n-type diffusion layer, and a concave portion at a surface of the n+-type diffusion layer.

Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Abstract: The present invention provides a paste composition for an electrode, the paste composition including phosphorus-tin-containing copper alloy particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.