Abstract: There is provided an etching method. A temperature at a plurality of predetermined positions on an upper surface of an Si substrate is measured during the etching processing. The etching processing includes supplying an etching solution to the upper surface of the Si substrate. An exothermic reaction occurs in the etching processing. The upper surface is heated or cooled depending on the measured value.

Abstract: Provided herein is an HVAC controller that receives blower volumes for different operating modes per HVAC zones, a HVAC system including the same and a method of operating the controller. In one embodiment, the controller includes: (1) an interface configured to receive blower volumes for each zone of the HVAC system that correspond to operating modes thereof of the HVAC system, wherein the blower volumes are received via a single graphical user interface and (2) a processor configured to direct operation of a circulation fan of the HVAC system based on at least one of the blower volumes.

Abstract: A low energy environmental sensor is provided herein that is configured to receive user inputs from movement of the sensor itself. A method of operating a rocking environmental sensor is also provided. In one embodiment, the rocking environmental sensor includes: (1) a base having a fulcrum point and (2) a face including a first movement initiator area and a second movement initiator area configured to cause the face to toggle with respect to the fulcrum point and complete a signaling path indicating a user input.

Abstract: An HVAC system that obtains demand specific data from an outdoor unit thereof is provided. An indoor unit controller, an outdoor unit controller and an outdoor unit of the HVAC system are also disclosed. In one embodiment, the outdoor unit controller includes: (1) an interface configured to receive a request for a second portion of demand data from an indoor controller of the HVAC system, wherein the request includes a first portion of the demand data that corresponds to the second portion and (2) a processor configured to respond to the request by determining the second portion based on the first portion and sending the second portion of the demand data to the indoor controller of the HVAC system.

Abstract: A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

Abstract: A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors.

Abstract: An information providing system includes a sound emission device for emitting, as sound wave, identification information modulated into a sound signal, an identification information resolution server including a mapping table in which the identification information, valid time information and the address information of a content are stored to be associated, and a mobile terminal device for transmitting the identification information demodulated from a picked-up sound wave to the identification information resolution server thereby obtaining address information and accessing the content using the obtained address information. When received the identification information from the mobile terminal device, the identification information resolution server returns the address information of a corresponding content to the mobile terminal device when the time information is within a valid time.

Abstract: In the electric field measuring device, a DC bias circuit applying a DC bias voltage to an optical intensity modulator is disposed in an area, and a DC bias control portion controlling a DC bias voltage is disposed outside the area. An electrical signal of a DC bias voltage which is output from the DC bias control portion is converted into an optical signal by an electrical-optical converter (E/O) so as to be introduced into the area via an optical fiber, and the optical signal is converted into an electrical signal by an optical-electrical converter (O/E) disposed in the area such that the electrical signal is input to the DC bias circuit.

Abstract: The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.

Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

Abstract: A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm?3.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: A liquid crystal display device having thin film transistors which can alleviate the required alignment accuracy of a semiconductor film while suppressing the generation of an optical leak current is provided.

Abstract: An electric field measuring apparatus measures electric field intensity of an electromagnetic wave generated from equipment under test installed in an area in which electromagnetic waves are detected. The apparatus includes an antenna, an RF amplifier amplifying an output signal of the antenna, a signal intensity detector detecting whether intensity of the output signal is higher than a predetermined level, a signal generator generating a detection result signal on the basis of a detection result of the signal intensity detector, a multiplexer multiplexing an output signal of the RF amplifier, the detection result signal, and a DC bias voltage, and an optical intensity modulator having a Mach-Zehnder type optical waveguide performing an optical modulation operation on the basis of an output signal of the multiplexer are arranged inside the area. Arranged outside the area are a light source unit, a receiver unit, a DC bias controller, and a display unit.

Abstract: Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.

Abstract: The image display device according to the present invention is an image display device where a pixel unit and an external connection terminal unit are provided on a substrate (SUB), and the pixel unit and the external connection terminal unit are connected by an aluminum wire (LN), having; an organic protective film (OPAS) directly covering the aluminum wire, except a contact hole (CH) of the external connection terminal unit and part of the pixel unit; and an ITO film (ITO) provided on the upper side of the organic protective film so as to cover the aluminum wire, including the external connection terminal unit and reaching to the pixel unit.

Abstract: In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer.

Abstract: A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

Abstract: A video display device that allows the color temperature of the signals in white color attributes having high luminance and low chroma saturation to be corrected with high precision is provided with a color temperature correction method so as to visually obtain a desirable white color on display. In some embodiments, the signal processing circuit can include an A/D converter to convert video signals into digitalized signals, a matrix circuit to convert the digitalized signals into luminance signals and at least two color difference signals, a hue conversion circuit to obtain hue signals from the color difference signals, a hue correction circuit to correct hue signals, a chroma saturation conversion circuit to obtain chroma saturation signals from color difference signals, a chroma saturation correction circuit to correct chroma saturation signals and a color temperature correction circuit to perform the color temperature correction on the respective hue and chroma saturation signals.