Abstract: This invention relates to a light-receiving module in which transmission impedance of lead terminals are matched by simple method. The module has a semiconductor light-receiving device, such as a photo diode, a plurality of lead terminals for transmitting an electrical signal converted by the semiconductor device, and a metal base with a plurality of through holes, the lead terminals passes therethrough.

Abstract: An optical module comprises a photodiode, an amplifying device, and a die capacitor. The die capacitor has at least a center pad, the photodiode is mounted thereon, and other pads on both side of the center pad. The die capacitor is mounted on a mounting surface of the module so as to locate the photodiode to be center of the surface. The amplifying device has a signal pad and a plural ground pad surrounding the signal pad. The signal pad is connected to the photodiode, while the ground pads are connected to the mounting surface through other pads on both side of the die capacitor.

Abstract: A non-contact data carrier includes a semiconductor device (11), a coil antenna (12), and a sealing resin coating (13) sealing the semiconductor device (11) and the coil antenna (12) therein. The electrodes (11a) of the semiconductor device (11) are connected to the opposite ends (12a, 12b) of the coil antenna (12) by wires (14). The surface of the coil antenna (12) opposite to the sealing resin coating (13) is covered with a protective layer (16) for protection.

Abstract: The invention provides a method for manufacturing molten metal at low cost and high productivity by melt-reducing a metal oxide and/or a metal hydroxide such as iron ore. To do this, at least the metal oxide and/or the metal hydroxide such as iron ore is preliminarily mixed, preliminarily mixed and granulated, or preliminarily mixed and molded with a carbonaceous material to prepare a mixture of raw materials. The mixture of raw materials is preliminarily reduced in a prereduction furnace of rotary hearth type, rotary kiln type, or the like to average metallization degree of the metal oxide and/or the metal hydroxide from 5 to 55%, which is then charged to a melting furnace for metal smelting, where the mixture of the raw materials is melted and finally reduced using the carbonaceous material as the reducing agent and using the combustion heat of the carbonaceous material and of carbon monoxide generated in the furnace as the major heat source.

Abstract: A cleaning apparatus (9) for cleaning a peripheral part of a substrate holds a peripheral part of a substrate (1) between the elastic porous member (29) of an upper cleaning roller (16) and an elastic porous member (30) of a lower cleaning roller (17). The power of a drive motor (13) is transmitted through a drive pulley (18), a belt (26) and a driven pulley (24) to a rotating shaft (17a) to rotate the lower cleaning roller (17), and is transmitted through a drive pulley (22), a belt (25) and a driven pulley (23) to a rotating shaft (16a) to rotate the upper cleaning roller (16) in a direction opposite the direction in which the lower cleaning roller (17) is rotated. A cleaning liquid is supplied through cleaning liquid supply nozzles (31) and cleaning liquid supply pipes (31a) into core members (27, 28). Then the cleaning liquid flows through connecting holes (35) formed in the circumferential walls of the core members (27, 28) and permeates the elastic porous members (29, 30).

Abstract: The refining method of low carbon molten iron comprises the steps of supplying the de-sulfurizing agent into the molten iron and agitating it so as to carry out the de-sulfurization, heating or carburizing the molten iron before or after the de-sulfurizing step, and de-carburizing the de-sulfurized metal in the decarburization treating furnace. The molten iron is produced by charging ores reduced until being metallized in the smelting reduction furnace. As the carbonaceous materials, powder coke, oil coke or waste plastic are used. As the iron source, the sintered ores of small grain size are used.

Abstract: The present invention provides a providing device capable of using a solution within a tank effectively than ever as preventing an air bubble from mixing in the solution to be provided to an applying device. In providing devices and for leading a coloring sensitive matter from any one of a plurality of pressure tanks to an applying device via a predetermined flow path, middle tanks are provided every for each of pressure tanks on the way of a flow path connecting each of the plurality of pressure tanks and the applying device. A sensor detects whether an amount of a solution stored in respective middle tanks is not less than a predetermined lower limit value or not. Then, a signal in response to its result of the detection is outputted to a system controlling device. On the basis of this output signal, it is discriminated whether the amount of the solution in the middle tank is not less than the lower limit value or not.

Abstract: It is an object of the present invention to provide a highly reliable optical module circuit board having a sufficient mechanical strength with respect to an external stress.

Abstract: A pin type light-receiving device according to the present invention comprises (a) a semiconductor substrate, (b) a first semiconductor layer formed on a semiconductor substrate and doped with an impurity of a first conduction type, (c) a second semiconductor layer formed in a mesa shape on the first semiconductor layer and made of a first semiconductor material without intentionally doping the first semiconductor material with an impurity, (d) a third semiconductor layer formed in a mesa shape on the second semiconductor layer and made of the first semiconductor material doped with an impurity of a second conduction type different from the first conduction type, (e) a first electrode layer formed in ohmic contact on the first semiconductor layer, (f) a second electrode layer formed in ohmic contact on the third semiconductor layer, and (g) a fourth semiconductor layer formed around the first to the third semiconductor layers and made of a second semiconductor material having a band gap energy greater than th

Abstract: It is an object of present invention to provide a low-cost photoelectric conversion module in which a signal for compensating noise caused by changes in temperature and variations in power supply is obtained. In the photoelectric conversion module according to the present invention, a first amplifier having an input terminal connected to the anode of a light-receiving element for converting an optical signal into an electrical signal amplifies the electrical signal to obtain an amplified signal. A second amplifier having an input terminal connected to one electrode of a capacitor outputs an amplified signal for compensating noise of the electrical signal amplified by the first amplifier. The other electrode of the capacitor is connected to the cathode of the light-receiving element. The capacitor has a capacitance value equal to the capacitance of the light-receiving element.

Abstract: It is an object of the present invention to provide an optical module having a structure in which alignment precision of sleeves to be accommodated to a housing can be improved with a simple operation. The optical module according to the present invention is characterized by providing special structures for defining the positions of the sleeves to a sleeve holder for holding the sleeves, and the housing having a cavity for accommodating the sleeves. In particular, the housing includes support portions each having a reference surface for defining the fixing position of the corresponding sleeve. The sleeve holder includes spring pieces each for urging the sleeve to the reference surface.

Abstract: An electron beam is radiated on an ion-plating material to heat and evaporate this material, thereby generating a vapor flow of the material. The vapor flow of the material is converged by a hood-like electrode, and at the same time, a positive voltage is applied to the electrode to attract thermoelectrons from the material. The vapor flow is ionized by the thermoelectrons. The converged and ionized vapor flow is deposited on a surface of a strip, thereby performing ion plating.

Abstract: A silicon substrate having a thin film circuit layer formed on the surface of the substrate is laid on a metallic base and a semiconductor chip made of compound semiconductor such as gallium arsenide is disposed in a hole defined in the central portion of the silicon substrate so that the semiconductor chip can be directly fixed to the metallic base for dissipating the heat of the semiconductor chip. The connecting terminals of the semiconductor chip are connected to thin film circuit layer formed on the surface of the silicon substrate through wires. The heat generated in the semiconductor chip can be transmitted to the metallic base so that the heat is effectively dissipated.

Abstract: A thick film forming process according to the present invention comprises using the screen printing to form thick films in the vicinity of the edges or parts of large areas of a substrate, and next using the direct writing to form thick films of patterns on the other parts of the substrate. The process of this invention enables a circuit pattern in thick films to be changed easily in set conditions.

Abstract: An apparatus for making a semiconductor device comprises a flexible mat, support shafts for supporting the flexible mat in a substantially horizontal position, a pressing plate having a generally convex body and supported for movement up and down, and a drive mechanism for driving one of the pressing plate and the wafer relative to the other of the pressing plate and the wafer so as to move up and down. The wafer having the first and second surfaces opposite to each other with the chips formed on the first surface thereof is placed on the mat with the chips confronting the flexible mat. The convex body of the pressing plate is pressed against the second surface of the wafer to separate the chips on the wafer individually.

Abstract: A surface grinding machine comprises a wheel head vertically movably supported; a cup-shaped diamond wheel supported by a rotatable wheel shaft at one end of the wheel head and having an abrasive grain layer of Young's modulus (10-15).times.10.sup.4 kgf/cm.sup.

Abstract: Holes are formed in a major surface of a hybrid IC insulating substrate mounting an optical semiconductor element, and terminal pins of a package are connected and fixed to the substrate while head portions of the terminal pins are inserted in the corresponding holes. Since the terminal pins do not protrude outside the major surface of the insulating substrate, a space therefor can be omitted, and the terminal pins are directly connected to the insulating substrate without being separated from each other. Furthermore, since the head portions of the terminal pins are inserted in the corresponding holes of the insulating substrate, they can be automatically aligned. In case that each hole has a tapered inner surface, insertion of the terminal pins can be further facilitated.

Abstract: A semiconductor device in which at least a part of each of the current flow paths extending from the electrode pads of the semiconductor chip to the outer terminals of the semiconductor package is made of superconducting material. During operation, when an overcurrent applied to a lead pin exceeds the critical current of the superconducting material, the resistance is increased from zero, and the semiconductor chip is thereby protected from damage. The superconducting material may also be configured between the outer terminals of the semiconductor package so that a potential difference can be measured. Also, a magnetic field may be applied to the superconducting material so that the critical current value can be set.

Abstract: In an optical reflection preventing film comprised of a plurality of layers provided on an optical element, one of the plurality of layers is formed by a transparent electrically conductive layer, and the optical film thickness of the transparent electrically conductive layer is 45-120 nm.