Abstract: A semiconductor chip has a semiconductor chip, a support electrode body bonded to one of the end portions of the semiconductor chip and supported by, and fixed to, a heat spreader at a support fixing portion thereof, a lead electrode body bonded to the other end portion of the semiconductor chip and an insulating/sealing member disposed at the bond portion between the semiconductor chip and the support electrode body and at the bond portion between the semiconductor chip and the lead electrode body. The support electrode body includes a portion having an outer diameter different from that of the support fixing portion at which the support electrode body is supported and fixed by the heat spreader.

Abstract: A push-in type semiconductor chip has a semiconductor device, a support electrode body bonded to one of the end portions of the semiconductor chip and supported by, and fixed to, a heat spreader at a support fixing portion thereof, a lead electrode body bonded to the other end portion of the semiconductor chip and an insulating/sealing member disposed at the bond portion between the semiconductor chip and the support electrode body and at the bond portion between the semiconductor chip and the lead electrode body. The support electrode body includes a first portion having an outer diameter different from that of the support fixing portion at which the support electrode body is supported and fixed by the heat spreader. By setting a predetermined relationship between the outer diameters of the first portion and the support fixing portion, deformation and breakage of the semiconductor chip during assembly can be prevented.

Abstract: A TSOP type semiconductor device having a LOC structure employing a copper (alloy) type frame prevents resin cracks that occur in a reliability test such as a temperature cycle test. The TSOP type semiconductor device has narrower common inner leads where a resin crack would be likely to occur first, and has a thinner chip.

Abstract: A field effect transistor comprises a semiconductor channel, a source and a drain electrode formed at the opposite ends of the channel and a gate electrode provided on the side of the channel. The channel has a small impurity density and therefore the depletion layer extending from the gate goes deep into the channel to substantially close the conductive portion of the channel even in the absence of a gate voltage. The drain current will not flow where the drain voltage is below a certain threshold voltage, and will flow where the drain .[.volage.]. .Iadd.voltage .Iaddend.is above the threshold voltage exhibiting a .Iadd.substantially .Iaddend.linear resistance characteristic. This drain-current to drain-voltage characteristic simulates the anode-current to anode-voltage characteristic of the triode vacuum tube very closely.