Abstract: A grill shutter module includes a radar unit which radiates radio waves toward a front, a rotatable flap disposed on a side of the radar unit, an actuator disposed behind the radar unit, and a power transmission part configured to connect the actuator and the flap to transmit power from the actuator to the flap.

Abstract: A high-strength hot-dip galvanized steel sheet including a hot-dip galvanized plating layer on a steel sheet base material whose tensile strength is 590 MPa or more, wherein the plating layer includes projecting alloy layers being in contact with the steel sheet base material, a number density of the projecting alloy layers is 4 pieces/mm or more per unit length of an interface between the steel sheet base material and the plating layer when seen from a sectional direction, and a maximum diameter of the projecting alloy layers at the interface is 100 ?m or less, wherein the steel sheet base material includes: a miniaturized layer being directly in contact with the interface between the steel sheet base material and the plating layer; a decarburized layer being in contact with the miniaturized layer and existing on an inward side of the steel sheet base material; and an inner layer other than the miniaturized layer and the decarburized layer, and one kind or two kinds or more of oxides of Si and Mn are contain

Abstract: A hot-dip galvanized steel sheet having a base steel sheet and a hot-dip galvanized layer, a ferrite phase is, by volume fraction, 50% or less in a range of ? thickness to ? thickness centered at a position of ¼ thickness from the surface of the base steel sheet, a hard structure is 50% or more, wherein the hot-dip galvanized steel sheet has the hot-dip galvanized layer in which Fe is 5.0% or less and Al is 1.0% or less, and columnar grains formed of a ? phase is 20% or more in an entire interface between the plated layer and the base steel sheet. On the surface of the base steel sheet, a volume fraction of a residual austenite is 3% or less.

Abstract: A steel sheet has a predetermined chemical composition, and a surface exhibits an absorption peak at which a reflectance is not less than 50% nor more than 85% in a range of wave numbers of 1200 cm?1 to 1300 cm?1 by a Fourier transform-infrared spectroscopy analysis by a reflection absorption spectrometry method, and does not exhibit an absorption peak in a range of wave numbers of 1000 cm?1 to 1100 cm?1, or exhibits an absorption peak at which a reflectance is 85% or more in the range of wave numbers of 1000 cm?1 to 1100 cm?1, wherein Ni of 3 mg/m2 to 100 mg/m2 adheres to the surface.

Abstract: A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).

Abstract: High strength steel sheet and high strength galvanized steel sheet which are excellent in shapeability which secure a tensile maximum strength 900 MPa or more high strength while obtaining excellent ductility and stretch flangeability, which sheets have predetermined compositions of ingredients, have steel sheet structures which contain volume fraction 1 to 20% of residual austenite phases, and which have martensite transformation points of the residual austenite phases of ?60° C. or less.

Abstract: The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving a processing uniformity of a plurality of substrates. The method may include: (a) subjecting a substrate accommodated in one of a plurality of process chambers to a thermal process: (b) transferring the substrate processed in (a) by a transfer robot provided in a vacuum transfer chamber connected to the plurality of process chambers from the one of a plurality of process chambers to a loadlock chamber connected to the vacuum transfer chamber; and (c) cooling the substrate accommodated in the loadlock chamber by supplying an inert gas to the substrate accommodated in the loadlock chamber according to a cooling recipe.

Abstract: In the present invention, a substrate is placed at a predetermined position on a substrate support even though the substrate is deviated on a substrate transfer unit. There is provided a substrate processing apparatus that includes a process chamber, a transfer chamber accommodating a substrate transfer unit, a substrate detecting unit, a memory unit configured to store a first reference position information, a second reference position information and a substrate reference position information and a controller configured to generate a detected position information representing a position of a substrate being transferred in the transfer chamber based on a detection result and to control the substrate transfer unit to place the substrate based on the detected position information, the first reference position information, the substrate reference position information and a difference between the first reference position information and the second reference position information.

Abstract: A hot-dip galvanized steel sheet includes a base steel sheet and a hot-dip galvanized layer formed on at least one surface of the base steel sheet, in which the hot-dip galvanized layer includes Fe in a content of more than 0% to 5% or less, Al in a content of more than 0% to 1.0% or less, and columnar grains formed by a ? phase on the surface of the steel sheet, further, 20% or more of the entire interface between the hot-dip galvanized layer and the base steel sheet is coated with the ? phase, and a ratio of an interface formed between ? grains in which coarse oxides are present among ? grains and the base steel sheet with respect to the entire interface between the ? phase and the base steel sheet in the hot-dip galvanized layer is 50% or less, the base steel sheet has predetermined chemical components and a refined layer in direct contact with the interface between the base steel sheet and the hot-dip galvanized layer, an average thickness of the refined layer is 0.1 to 5.

Abstract: A hot-dip galvanized steel sheet wherein the hot-dip galvanized steel sheet comprises a base steel sheet and a hot-dip galvanized layer, a ferrite phase is, by volume fraction, 50% or less in a range of ? thickness to ? thickness centered at a position of ¼ thickness from the surface of the base steel sheet, a hard structure is 50% or more, wherein the hot-dip galvanized steel sheet has the hot-dip galvanized layer in which Fe is 5.0% or less and Al is 1.0% or less, and columnar grains formed of a ? phase is 20% or more in an entire interface between the plated layer and the base steel sheet, on the surface of the base steel sheet in which a volume fraction of a residual austenite is 3% or less and a ratio of a volume fraction of the hard structure is 0.10 times or more to 0.

Abstract: A hot-dip galvanized steel sheet wherein the hot-dip galvanized steel sheet comprises a base steel sheet and a hot-dip galvanized layer, a ferrite phase is, by volume fraction, 40% or more and 97% or less in a range of ? thickness to ? thickness centered at a position of ¼ thickness from the surface of the base steel sheet, a hard structure is 3% or more in total, wherein the hot-dip galvanized steel sheet has the hot-dip galvanized layer in which Fe is 5.0% or less and Al is 1.0% or less, and columnar grains formed of a ? phase is 20% or more in an entire interface between the plated layer and the base steel sheet on the surface of the base steel sheet in which a ratio of a volume fraction of the hard structure in a surface layer range of 20 ?m depth in a steel sheet direction from an interface between the hot-dip galvanized layer and the base steel sheet is 0.10 times or more to 0.

Abstract: A hot-dip galvanized steel sheet includes a base steel sheet and a hot-dip galvanized layer formed on at least one surface of the base steel sheet, in which the hot-dip galvanized layer includes Fe in a content of more than 0% to 5% or less, Al in a content of more than 0% to 1.0% or less, and columnar grains formed by a ? phase on the surface of the steel sheet, further, 20% or more of the entire interface between the hot-dip galvanized layer and the base steel sheet is coated with the ? phase, and a ratio of an interface formed between grains in which coarse oxides are present among grains and the base steel sheet with respect to the entire interface between the ? phase and the base steel sheet in the hot-dip galvanized layer is 50% or less, the base steel sheet has predetermined chemical components and a refined layer in direct contact with the interface between the base steel sheet and the hot-dip galvanized layer, an average thickness of the refined layer is 0.1 to 5.

Abstract: A grill shutter module includes a radar unit which radiates radio waves toward a front, a rotatable flap disposed on a side of the radar unit, an actuator disposed behind the radar unit, and a power transmission part configured to connect the actuator and the flap to transmit power from the actuator to the flap.

Abstract: A galvannealed steel sheet includes: a steel sheet; a coating layer on a surface of the steel sheet; and a mixed layer formed between the steel sheet and the coating layer, in which the mixed layer includes a base iron portion having fine grains having a size of greater than 0 ?m and equal to or smaller than 2 ?m, a Zn—Fe alloy phase, and oxides containing one or more types of Mn, Si, Al, and Cr, and in the mixed layer, the oxides and the Zn—Fe alloy phase are present in grain boundaries that form the fine grains and the Zn—Fe alloy phase is tangled with the base iron portion. [Mn]+[Si]+[Al]+[Cr]?0.

Abstract: There is provided a high-strength hot-dip galvanized steel sheet and the like excellent in mechanical cutting property, which are capable of obtaining high ductility while ensuring high strength with maximum tensile strength of 900 MPa or more. The high-strength hot-dip galvanized steel sheet has a sheet thickness of 0.6 to 5.0 mm and has a plating layer on a surface of a steel sheet with component compositions being set in appropriate ranges, in which the steel sheet structure contains a 40 to 90% ferrite phase and a 3% or more retained austenite phase by volume fraction. In the retained austenite phase, a solid solution carbon amount is 0.70 to 1.00%, an average grain diameter is 2.0 ?m or less, an average distance between grains is 0.1 to 5.0 ?m, a thickness of a decarburized layer in a steel sheet surface layer portion is 0.01 to 10.0 ?m, an average grain diameter of oxides contained in the steel, sheet surface layer portion is 30 to 120 nm and an average density thereof is 1.

Abstract: A base steel sheet has a hot-dip galvanized layer formed on a surface thereof, in which, in a steel sheet structure in a range of ? thickness to ? thickness centered around ¼ thickness of a sheet thickness from a surface, a volume fraction of a retained austenite phase is 5% or less, and a total volume fraction of phases of bainite, bainitic ferrite, fresh martensite, and tempered martensite is 40% or more, an average effective crystal grain diameter is 5.0 ?m or less, a maximum effective crystal grain diameter is 20 ?m or less, and a decarburized layer with a thickness of 0.01 ?m to 10.0 ?m is formed on a surface layer portion, in which a density of oxides dispersed in the decarburized layer is 1.0×1012 to 1.0×1016 oxides/m2, and an average grain diameter of the oxides is 500 nm or less.

Abstract: A semiconductor circuit includes an oscillation circuit; an output circuit that receives a first oscillation signal from the oscillation circuit and outputs a second oscillation signal; a DC circuit that receives a voltage based on a power supply voltage and outputs at least one of a DC voltage and a DC current; and a semiconductor substrate on which the oscillation circuit, the output circuit, and the DC circuit are formed. In a plan view of the semiconductor substrate, the DC circuit is disposed between the oscillation circuit and the output circuit.

Abstract: Provided is a Fourier transform spectroscopy method that removes restrictions on spectral resolution and spectral accuracy in Fourier transform spectroscopy for observing a cyclic repeating phenomenon, that realizes, theoretically, infinitesimal spectral resolution accuracy. After accurately and sufficiently stabilizing the repetition period of a phenomenon, a temporal waveform is acquired by making a repetition period and a time width for observing the temporal waveform of a phenomenon strictly conform, and by performing a Fourier transform, acquired is a discrete separation spectrum in which the inverse number of the observation time window size T is made a frequency data gap. Measurement is repeated while causing the repetition period to change, and the gap of the discrete separation spectrum is supplemented.