Abstract: Provided is a coil device having a first coil and a second coil insulated by an insulating film, and deformation of the insulating film is suppressed. A coil device includes: a first insulating film provided in contact with a first direction side of a substrate; a spiral-shaped first coil part provided in contact with a first direction side of the first insulating film; a second insulating film provided to cover a first direction side of the first coil part and the first direction side of the first insulating film where the first coil part is not provided; a spiral-shaped second coil part provided in contact with a first direction side of the second insulating film; and a groove provided on a surface on the first direction side of the second insulating film in a region inside an outer peripheral edge of the second coil part in plan view.

Abstract: A resistive field plate is arranged in a spiral shape in plan view so as to gradually approach an inner main electrode from an outer main electrode. The plurality of floating layers are arranged radially toward the low potential region around the high potential region in plan view. The resistive field plate is provided on the plurality of floating layers via an interlayer insulating film, and thus has a floating step reflecting a film thickness of each of the plurality of floating layers. That is, the resistive field plate is provided in such a manner that the floating step is repeatedly generated along the lapping direction.

Abstract: An object is to provide a technique for preventing an oxide film from being partly thin. A third oxide film is formed onto a nitride film in a first area; in addition, a fourth oxide film is formed onto a main surface in a second area. The third oxide film, the nitride film, and a first oxide film are removed from the first area using a mask. After the third oxide film, the nitride film, and the first oxide film are removed, a fifth oxide film is formed onto the main surface in the first area. The fifth oxide film is removed from the first area using a mask. After the fifth oxide film is removed, a sixth oxide film is formed onto the main surface in the first area.

Abstract: An object is to provide a technique for preventing an oxide film from being partly thin. A third oxide film is formed onto a nitride film in a first area; in addition, a fourth oxide film is formed onto a main surface in a second area. The third oxide film, the nitride film, and a first oxide film are removed from the first area using a mask. After the third oxide film, the nitride film, and the first oxide film are removed, a fifth oxide film is formed onto the main surface in the first area. The fifth oxide film is removed from the first area using a mask. After the fifth oxide film is removed, a sixth oxide film is formed onto the main surface in the first area.

Abstract: A semiconductor device manufacturing method includes an element forming step of forming an element structure on a front surface of a substrate and forming a back structure on a back surface of the substrate, and a film forming step of performing film forming on a front surface of the element structure while measuring the temperature of the substrate by using a radiation thermometer that applies infrared rays of a wavelength ?i to the back structure to obtain an infrared emissivity of the substrate. The back structure has a first layer exposed to the outside and a second layer in contact with the first layer, the refractive index of the second layer being smaller than that of the first layer, and the layer thickness of the first layer is set in a range from (2n?1)?i/8 to (2n+1)?i/8, with n being a positive even number.

Abstract: A semiconductor device manufacturing method includes an element forming step of forming an clement structure on a front surface of a substrate and forming a back structure on a back surface of the substrate, and a film forming step of performing film forming on a front surface of the element structure while measuring the temperature of the substrate by using a radiation thermometer that applies infrared rays of a wavelength ?i to the back structure to obtain an infrared emissivity of the substrate. The back structure has a first layer exposed to the outside and a second layer in contact with the first layer, the refractive index of the second layer being smaller than that of the first layer, and the layer thickness of the first layer is set in a range from (2n?1)?i/8 to (2n+1)?i/8, with n being a positive even number.

Abstract: A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.

Abstract: An SOI wafer according to the present invention includes a support substrate and an insulating layer formed on the support substrate, a predetermined cavity pattern being formed on one of main surfaces of the support substrate on which the insulating layer is provided, further includes an active semiconductor layer formed on the insulating layer with the cavity pattern being closed, the active semiconductor layer not being formed in an outer peripheral portion of the support substrate, and further includes a plurality of superposition mark patterns formed in the outer peripheral portion on the one of the main surfaces of the support substrate for specifying a position of the cavity pattern.

Abstract: A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.

Abstract: An SOI wafer according to the present invention includes a support substrate and an insulating layer formed on the support substrate, a predetermined cavity pattern being formed on one of main surfaces of the support substrate on which the insulating layer is provided, further includes an active semiconductor layer formed on the insulating layer with the cavity pattern being closed, the active semiconductor layer not being formed in an outer peripheral portion of the support substrate, and further includes a plurality of superposition mark patterns formed in the outer peripheral portion on the one of the main surfaces of the support substrate for specifying a position of the cavity pattern.