Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: A semiconductor device according to an embodiment includes first and second electrodes, a gate electrode, first to third semiconductor regions, and first and second insulating parts. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The first insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode is located in the first insulating part. The gate electrode faces the second semiconductor region. The second insulating part is located on the third semiconductor region. The second insulating part is not overlapping the gate electrode. The second insulating part has tensile stress. The second electrode is located on the second insulating part and electrically connected with the third semiconductor region.

Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes, first and second insulating films. The semiconductor part includes a first layer of a first conductivity type and a second layer of a second conductivity type. The first and second electrodes are provided on back and front surfaces of the semiconductor part, respectively. The second layer is provided between the first layer and the second electrode. A plurality of the third electrodes extend into the first layer through the second layer. The fourth electrode extends into the first layer from the front side of the semiconductor part and surrounds the second layer. The first insulating film electrically insulates the third electrode from the semiconductor part. The second insulating film electrically insulates the fourth electrode from the semiconductor part. The second insulating film has a first thickness greater than a second thickness of the first insulating film.

Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes, and insulating films. The semiconductor part is provided between the first and second electrodes. The third and fourth electrodes extend into the semiconductor part from a frond side thereof. The third electrodes are surrounded by the fourth electrode. The insulating films are provided between the semiconductor part and the third electrodes, respectively. The fourth electrode includes first to third portions. The first to third portions extend in first to third directions, respectively, along a back surface of the semiconductor part. The third portion links the first and second portions. The second direction is orthogonal to the first direction. The third direction crosses the first and second directions. The third electrodes are arranged to have a minimum spacing of two adjacent insulating films between two third electrodes adjacent to each other respectively in the first and third directions.

Abstract: An insulating device includes a first element, a second element, a first lead, a second lead, and a resin member. The second element is electrically connected to the first element. The first element is mounted on the first lead. The second lead includes a first surface and a second surface, the second surface being at a side opposite to the first surface. The second element is mounted to the first surface. the second lead is arranged to overlap the first element in a direction crossing the second surface of the second lead. The resin member seals the first element, the second element, the first lead, and the second lead.

Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor part located between the first electrode and the second electrode, a third electrode located in the semiconductor part, an insulating film located between the third electrode and the semiconductor part, an insulating member located in the semiconductor part at a position separated from the insulating film, a fourth electrode located in the insulating member, and a compressive stress member located in the fourth electrode. The compressive stress member has compressive stress along a first direction. The first direction is from the first electrode toward the second electrode.

Abstract: An insulating device includes a first electrode, a second electrode, and an insulating film. The insulating film is located between the first electrode and the second electrode. The insulating film includes a positive charged region. The positive charged region is located at a portion in a direction from the first electrode toward the second electrode.

Abstract: An insulating element includes a first coil; a second coil; and an inter-layer insulating film located between the first coil and the second coil. The inter-layer insulating film includes a first layer, a second layer, and a third layer located between the first layer and the second layer. The first layer is located between the first coil and the third layer. The second layer is located between the second coil and the third layer. A bandgap of the third layer is narrower than a bandgap of the first layer and a bandgap of the second layer.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, a structure body, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided selectively on the second semiconductor region. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third and second semiconductor regions, and a portion of the first semiconductor region. The conductive part is provided in the insulating part. The conductive part includes a portion facing the first semiconductor region. The gate electrode faces the second semiconductor region. The second electrode is provided on the second and third semiconductor regions, and the structure body. The second electrode is electrically connected to the second and third semiconductor regions, and the conductive part.

Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: A semiconductor device according to an embodiment includes first and second electrodes, a gate electrode, first to third semiconductor regions, and first and second insulating parts. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The first insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode is located in the first insulating part. The gate electrode faces the second semiconductor region. The second insulating part is located on the third semiconductor region. The second insulating part is not overlapping the gate electrode. The second insulating part has tensile stress. The second electrode is located on the second insulating part and electrically connected with the third semiconductor region.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third semiconductor regions, first and second insulating parts, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor regions are provided selectively on the second semiconductor region. The first insulating part is arranged with the third and second semiconductor regions, and a portion of the first semiconductor region. The second electrode is provided inside the first insulating part. The gate electrode is provided inside the first insulating part and electrically isolated from the second electrode. The third electrode is provided on the second and third semiconductor regions. The third electrode includes a contact part provided between the third semiconductor regions. The second insulating part is provided between the first semiconductor region and the contact part.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, a structure body, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided selectively on the second semiconductor region. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third and second semiconductor regions, and a portion of the first semiconductor region. The conductive part is provided in the insulating part. The conductive part includes a portion facing the first semiconductor region. The gate electrode faces the second semiconductor region. The second electrode is provided on the second and third semiconductor regions, and the structure body. The second electrode is electrically connected to the second and third semiconductor regions, and the conductive part.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes on back and front surfaces of the semiconductor part, respectively, a control electrode and a field plate inside a trench on the front surface side. The semiconductor part includes first and third layers of a first conductivity type and a second layer of a second conductivity type. The second layer is provided between the first layer and the second electrode. The third layer is selectively provided between the second layer and the second electrode. The field plate is electrically isolated from the semiconductor part by first and second insulating films. The control electrode is electrically isolated from the semiconductor part by the first insulating film. The second insulating film positioned between the first insulating film and the field plate. The second insulating film has a dielectric constant smaller than a dielectric constant of the first insulating film.

Abstract: A semiconductor device includes a semiconductor body, first and second electrodes and a control electrode. The semiconductor body is positioned between the first and second electrodes. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes a first layer of a first conductivity-type and a second layer of a second conductivity-type alternately arranged along the first electrode. The first and second layers include first and second low-concentration portions, respectively. The first low-concentration portion has a first conductivity-type impurity concentration lower than that in other portion of the first layer. The second low-concentration portion has a second conductivity-type impurity concentration lower than that in other portion of the second layer. The first low-concentration portion is positioned at a level same as a level of the second low-concentration portion in a direction directed toward the first electrode from the second electrode.

Abstract: A semiconductor device includes a semiconductor body, first and second electrodes and a control electrode. The semiconductor body is positioned between the first and second electrodes. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes a first layer of a first conductivity-type and a second layer of a second conductivity-type alternately arranged along the first electrode. The first and second layers include first and second low-concentration portions, respectively. The first low-concentration portion has a first conductivity-type impurity concentration lower than that in other portion of the first layer. The second low-concentration portion has a second conductivity-type impurity concentration lower than that in other portion of the second layer. The first low-concentration portion is positioned at a level same as a level of the second low-concentration portion in a direction directed toward the first electrode from the second electrode.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third semiconductor regions, first and second insulating parts, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor regions are provided selectively on the second semiconductor region. The first insulating part is arranged with the third and second semiconductor regions, and a portion of the first semiconductor region. The second electrode is provided inside the first insulating part. The gate electrode is provided inside the first insulating part and electrically isolated from the second electrode. The third electrode is provided on the second and third semiconductor regions. The third electrode includes a contact part provided between the third semiconductor regions. The second insulating part is provided between the first semiconductor region and the contact part.

Abstract: According to one embodiment, a semiconductor device includes first, second, and third semiconductor regions, first, second, and third electrodes, and a first insulating portion. The first semiconductor region includes first and second partial regions. A first direction from the second partial region toward the second semiconductor region crosses a second direction from the second region toward the first partial region. The third semiconductor region is provided between the second partial region and the second semiconductor region in the first direction. The first insulating portion includes a first insulating region provided between the third semiconductor region and the first electrode in the second direction, a second insulating region provided between the first partial region and the first electrode in the first direction, and a third insulating region provided between the first partial region and the first insulating region in the first direction.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes on back and front surfaces of the semiconductor part, respectively, a control electrode and a field plate inside a trench on the front surface side. The semiconductor part includes first and third layers of a first conductivity type and a second layer of a second conductivity type. The second layer is provided between the first layer and the second electrode. The third layer is selectively provided between the second layer and the second electrode. The field plate is electrically isolated from the semiconductor part by first and second insulating films. The control electrode is electrically isolated from the semiconductor part by the first insulating film. The second insulating film positioned between the first insulating film and the field plate. The second insulating film has a dielectric constant smaller than a dielectric constant of the first insulating film.

Abstract: A semiconductor device includes a semiconductor body, first and second electrodes and a control electrode. The semiconductor body is positioned between the first and second electrodes. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes a first layer of a first conductivity-type and a second layer of a second conductivity-type alternately arranged along the first electrode. The first and second layers include first and second low-concentration portions, respectively. The first low-concentration portion has a first conductivity-type impurity concentration lower than that in other portion of the first layer. The second low-concentration portion has a second conductivity-type impurity concentration lower than that in other portion of the second layer. The first low-concentration portion is positioned at a level same as a level of the second low-concentration portion in a direction directed toward the first electrode from the second electrode.