Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: A nonvolatile memory device includes: at least one first interconnection extending in a first direction; at least one second interconnection disposed above the first interconnection and extending in a second direction nonparallel to the first direction; a memory cell disposed between the first interconnection and the second interconnection at an intersection of the first interconnection and the second interconnection and including a memory element; and an element isolation layer disposed between the memory cells. At least one dielectric film with a higher density than the element isolation layer is disposed on a sidewall surface of the memory cell.

Abstract: An input information processing system, which is configured so as to enable an operator to efficiently conduct work without interruption, and processes input information that has been inputted using an input device, is configured so as to comprise: a display means for displaying data to be processed on a display screen; a first input device for inputting first input information; a second input device for inputting second input information; an acquisition means for acquiring a predetermined position in the data to be processed, which is displayed on the display screen of the display means, on the basis of the first input information inputted using the first input device; and control means for clearly showing the predetermined position in the data to be processed which was acquired by the acquisition means on the data to be processed displayed on the display screen of the display means, and for controlling the data to be processed which is displayed on the display screen of the display means on the basis of the

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: An objective of this present invention is to provide a conductive paste that could obtain good electrical property, for example series resistance in an electrode. An aspect of the present invention relates to a conductive paste which comprises electrically conductive powder; glass frit which comprises, based on weight percent (wt %) of the glass frit, 8-26 wt % of SiO2, 0.1-5 wt % of Al2O3, and 73-90 wt % of lead compound, wherein lead fluoride is contained in the range of 5-28 wt % based on the total weight of the lead compound; and organic medium.

Abstract: A method of manufacturing a solar cell electrode comprising steps of: applying onto a semiconductor substrate a conductive paste comprising (i) a conductive powder, (ii) a glass frit, (iii) an organic polymer and (iv) an organic solvent comprising 30 to 85 weight percent (wt %) of 1-phenoxy-2-propanol based on the weight of the organic solvent; and firing the conductive paste.

Abstract: A conductive paste for forming a solar cell electrode, comprising: a conductive powder; a glass frit; a metal resinate wherein a metal contained in the metal resinate is 0.15 to 1 parts by weight based on 100 parts by weight of the conductive powder; and an organic medium.

Abstract: A method of manufacturing a solar cell electrode comprising steps of: applying onto a semiconductor substrate a conductive paste comprising (i) a conductive powder, (ii) a glass frit, (iii) an organic polymer and (iv) an organic solvent comprising 30 to 85 weight percent (wt %) of 1-phenoxy-2-propanol based on the weight of the organic solvent; and firing the conductive paste.

Abstract: According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: To obtain low resistance and high adhesion at the same time in a solar cell electrode, a conductive paste is offered. A conductive paste for solar cell electrode contains conductive powder, organic medium and glass frit which is mixture of more than one kind of glass frit such as a mixture of glass frit containing at least PbO and glass frit containing at least Bi2O3.

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.

Abstract: An electrode paste for a solar cell comprising electrically conductive particles, lead-free glass frit, a resin binder and zinc oxide particles, wherein zinc oxide particles having a specific surface area of 6 m2/g or less are contained at 10% by weight or more based on the total amount of zinc oxide.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.

Abstract: A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.

Abstract: According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.

Abstract: A method of forming a photovoltaic cell conductor that comprises steps of, applying on a semiconductor substrate a thick film conductive composition comprising inorganic powders comprising electrically conductive powder, first glass frit and second glass frit, and organic medium, wherein total PbO in the glass frits is 80.5 to 83.5 wt % based on the total weight of the first glass frit and the second glass frit, and firing the thick film conductive composition applied on the semiconductor substrate.

Abstract: A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.

Abstract: Disclosed is an electrically conducting paste comprising a silver powder, a glass frit, a resin binder and a sintering inhibitor. The paste is used in the manufacture of solar cell electrodes by applying the electrically conducting paste to a substrate and then firing of the coated substrate.