Patents by Inventor Takuya Konno

Takuya Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8389324
    Abstract: A method of manufacturing a solar cell electrode comprising steps of: applying onto a semiconductor substrate a conductive paste comprising (i) a conductive powder, (ii) a glass frit, (iii) an organic polymer and (iv) an organic solvent comprising 30 to 85 weight percent (wt %) of 1-phenoxy-2-propanol based on the weight of the organic solvent; and firing the conductive paste.
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: March 5, 2013
    Assignee: E I du Pont de Nemours and Company
    Inventor: Takuya Konno
  • Publication number: 20130014817
    Abstract: A conductive paste for forming a solar cell electrode, comprising: a conductive powder; a glass frit; a metal resinate wherein a metal contained in the metal resinate is 0.15 to 1 parts by weight based on 100 parts by weight of the conductive powder; and an organic medium.
    Type: Application
    Filed: July 15, 2011
    Publication date: January 17, 2013
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventor: Takuya Konno
  • Publication number: 20130011959
    Abstract: A method of manufacturing a solar cell electrode comprising steps of: applying onto a semiconductor substrate a conductive paste comprising (i) a conductive powder, (ii) a glass frit, (iii) an organic polymer and (iv) an organic solvent comprising 30 to 85 weight percent (wt %) of 1-phenoxy-2-propanol based on the weight of the organic solvent; and firing the conductive paste.
    Type: Application
    Filed: July 5, 2011
    Publication date: January 10, 2013
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventor: Takuya Konno
  • Patent number: 8274816
    Abstract: According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: September 25, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Noriko Bota, Yasuhiro Nojiri, Hiroyuki Fukumizu, Takuya Konno, Kazuhito Nishitani
  • Publication number: 20120199192
    Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
    Type: Application
    Filed: April 13, 2012
    Publication date: August 9, 2012
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: HIDEKI AKIMOTO, Takuya Konno, Giovanna Laudisio, Patricia J. Ollivier, Michael Rose, Jerome David Smith, Richard John Sheffield Young
  • Patent number: 8231934
    Abstract: To obtain low resistance and high adhesion at the same time in a solar cell electrode, a conductive paste is offered. A conductive paste for solar cell electrode contains conductive powder, organic medium and glass frit which is mixture of more than one kind of glass frit such as a mixture of glass frit containing at least PbO and glass frit containing at least Bi2O3.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: July 31, 2012
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Norihiko Takeda, Takuya Konno
  • Patent number: 8158504
    Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: April 17, 2012
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Hideki Akimoto, Takuya Konno, Giovanna Laudisio, Patricia J. Ollivier, Michael Rose, Jerome David Smith, Richard John Sheffield Young
  • Publication number: 20110309318
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.
    Type: Application
    Filed: March 10, 2011
    Publication date: December 22, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takuya KONNO, Kazuhiko YAMAMOTO
  • Patent number: 8075807
    Abstract: An electrode paste for a solar cell comprising electrically conductive particles, lead-free glass frit, a resin binder and zinc oxide particles, wherein zinc oxide particles having a specific surface area of 6 m2/g or less are contained at 10% by weight or more based on the total amount of zinc oxide.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: December 13, 2011
    Assignee: E. I. du Pont de Nemours and Company
    Inventor: Takuya Konno
  • Patent number: 8076777
    Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.
    Type: Grant
    Filed: June 8, 2009
    Date of Patent: December 13, 2011
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Takuya Konno, Brian J. Laughlin, Hisashi Matsuno
  • Publication number: 20110198556
    Abstract: A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.
    Type: Application
    Filed: February 2, 2011
    Publication date: August 18, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuhiko YAMAMOTO, Takuya Konno
  • Publication number: 20110149638
    Abstract: According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.
    Type: Application
    Filed: February 28, 2011
    Publication date: June 23, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Noriko BOTA, Yasuhiro Nojiri, Hiroyuki Fukumizu, Takuya Konno, Kazuhito Nishitani
  • Publication number: 20110143497
    Abstract: A method of forming a photovoltaic cell conductor that comprises steps of, applying on a semiconductor substrate a thick film conductive composition comprising inorganic powders comprising electrically conductive powder, first glass frit and second glass frit, and organic medium, wherein total PbO in the glass frits is 80.5 to 83.5 wt % based on the total weight of the first glass frit and the second glass frit, and firing the thick film conductive composition applied on the semiconductor substrate.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 16, 2011
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Shigendo Enomoto, Takuya Konno, Brian J. Laughlin, Hisashi Matsuno, Chun-Kwei Wu
  • Publication number: 20110049463
    Abstract: A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.
    Type: Application
    Filed: March 16, 2010
    Publication date: March 3, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuhiko YAMAMOTO, Takuya Konno, Takeshi Yamaguchi
  • Patent number: 7851012
    Abstract: Disclosed is an electrically conducting paste comprising a silver powder, a glass frit, a resin binder and a sintering inhibitor. The paste is used in the manufacture of solar cell electrodes by applying the electrically conducting paste to a substrate and then firing of the coated substrate.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: December 14, 2010
    Assignee: E.I. du Pont de Nemours and Company
    Inventor: Takuya Konno
  • Publication number: 20100308462
    Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.
    Type: Application
    Filed: June 8, 2009
    Publication date: December 9, 2010
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: TAKUYA KONNO, BRIAN J. LAUGHLIN, HISASHI MATSUNO
  • Publication number: 20100258166
    Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
    Type: Application
    Filed: April 8, 2010
    Publication date: October 14, 2010
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Brian J. Laughlin, Alan Frederick Carroll, Kenneth Warren Hang, Yueli Wang, Takuya Konno
  • Publication number: 20100244114
    Abstract: A nonvolatile memory device includes: at least one first interconnection extending in a first direction; at least one second interconnection disposed above the first interconnection and extending in a second direction nonparallel to the first direction; a memory cell disposed between the first interconnection and the second interconnection at an intersection of the first interconnection and the second interconnection and including a memory element; and an element isolation layer disposed between the memory cells. At least one dielectric film with a higher density than the element isolation layer is disposed on a sidewall surface of the memory cell.
    Type: Application
    Filed: March 18, 2010
    Publication date: September 30, 2010
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takuya Konno, Hiroyuki Fukumizu, Kazuhito Nishitani
  • Publication number: 20100236621
    Abstract: An objective of this present invention is to provide a conductive paste that could obtain good electrical property, for example series resistance in an electrode. An aspect of the present invention relates to a conductive paste which comprises electrically conductive powder; glass frit which comprises, based on weight percent (wt %) of the glass frit, 8-26 wt % of SiO2, 0.1-5 wt % of Al2O3, and 73-90 wt % of lead compound, wherein lead fluoride is contained in the range of 5-28 wt % based on the total weight of the lead compound; and organic medium.
    Type: Application
    Filed: March 18, 2010
    Publication date: September 23, 2010
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Takuya Konno, Hisashi Matsuno, Brian J. Laughlin
  • Publication number: 20100227433
    Abstract: The electroconductive thick film paste of the present invention is a silver electroconductive paste, which includes silver particles, glass particles, and an organic vehicle, and is used in an electrode for connecting a back face terminal on the silicon substrate of a solar cell, and is characterized by the fact that the average particle diameter of said silver particles is 3.0-15.0 ?m. The present invention is further directed to an electrode formed from the composition as detailed above and a solar cell comprising said electrode.
    Type: Application
    Filed: December 31, 2009
    Publication date: September 9, 2010
    Applicant: E. I DU PONT DE NEMOURS AND COMPANY DUPONT KABUSHIKI KAISHA
    Inventor: TAKUYA KONNO