Patents by Inventor Talex Sajoto
Talex Sajoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9218997Abstract: Electrostatic chucks and methods of manufacturing the same are provided herein. In some embodiments, an electrostatic chuck comprises an electrically conductive body having one or more channels formed in an upper surface thereof; a plate positioned within the one or more channels to define one or more plenums between the body and the plate, wherein the surfaces of the plenum are anodized; one or more fluid passages disposed in the plate and fluidly coupling the one or more plenums to the upper surface of the body, wherein the surfaces of the fluid passages are electrically insulated; and a dielectric layer disposed over the upper surface of the body and the plate, wherein the dielectric layer forms a support surface for a substrate to be disposed thereon.Type: GrantFiled: November 13, 2008Date of Patent: December 22, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Seok Yul Jun, Bum Jin Park, Sun Il Kim, Hyong Seok Oh, Sung Chul Cho, Young Sam Na, Yeon Sang Cho, Ha Sung Song, Seong Ju Kim, Hee Sang Chae, Talex Sajoto
-
Publication number: 20100109263Abstract: Electrostatic chucks and methods of manufacturing the same are provided herein. In some embodiments, an electrostatic chuck comprises an electrically conductive body having one or more channels formed in an upper surface thereof; a plate positioned within the one or more channels to define one or more plenums between the body and the plate, wherein the surfaces of the plenum are anodized; one or more fluid passages disposed in the plate and fluidly coupling the one or more plenums to the upper surface of the body, wherein the surfaces of the fluid passages are electrically insulated; and a dielectric layer disposed over the upper surface of the body and the plate, wherein the dielectric layer forms a support surface for a substrate to be disposed thereon.Type: ApplicationFiled: November 13, 2008Publication date: May 6, 2010Inventors: Seok Yul Jun, Bum Jin Park, Sun Il Kim, Hyong Seok Oh, Sung Chul Cho, Young Sam Na, Yeon Sang Cho, Ha Sung Song, Seong Ju Kim, Hee Sang Chae, Talex Sajoto
-
Patent number: 7094313Abstract: A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.Type: GrantFiled: April 21, 2004Date of Patent: August 22, 2006Assignee: Applied Materials, Inc.Inventors: Eller Y. Juco, Visweswaren Sivaramakrishnan, Mario David Silvetti, Talex Sajoto
-
Publication number: 20050235916Abstract: A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.Type: ApplicationFiled: April 21, 2004Publication date: October 27, 2005Applicant: Applied Materials, Inc.Inventors: Eller Juco, Visweswaren Sivaramakrishnan, Mario Silvetti, Talex Sajoto
-
Patent number: 6616767Abstract: The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.Type: GrantFiled: March 27, 1998Date of Patent: September 9, 2003Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Talex Sajoto, Charles Dornfest, Harold Mortensen, Richard Palicka
-
Publication number: 20030051665Abstract: The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.Type: ApplicationFiled: March 27, 1998Publication date: March 20, 2003Inventors: JUN ZHAO, TALEX SAJOTO, CHARLES DORNFEST, HAROLD MORTENSEN, RICHARD PALICKA
-
Patent number: 6527865Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.Type: GrantFiled: June 16, 2000Date of Patent: March 4, 2003Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Charles Dornfest, Leonid Selyutin, Jun Zhao, Vincent Ku, Xiao Liang Jin
-
Patent number: 6464795Abstract: A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.Type: GrantFiled: May 3, 2000Date of Patent: October 15, 2002Assignee: Applied Materials, Inc.Inventors: Semyon Sherstinsky, Calvin Augason, Leonel A. Zuniga, Jun Zhao, Talex Sajoto, Leonid Selyutin, Joseph Yudovsky, Maitreyee Mahajani, Steve G. Ghanayem, Tai T. Ngo, Arnold Kholodenko
-
Publication number: 20020075631Abstract: The present invention provides a capacitor having upper and lower electrodes formed of iridium or iridium oxide or combinations thereof. The electrodes are preferably formed using physical vapor deposition. An insulating layer disposed between the electrodes can be a ferroelectric ceramic such as PZT or PLZT.Type: ApplicationFiled: December 27, 2000Publication date: June 20, 2002Applicant: Applied Materials, Inc.Inventors: Kaushal Kishore Singh, Farid Abooameri, Visweswaren Sivaramakrishnan, Talex Sajoto, Vicente Lim, Jun Zhao
-
Publication number: 20020015855Abstract: The present invention provides a system and method for depositing materials onto a substrate and preferably includes physical vapor deposition (PVD) and chemical vapor deposition (CVD) processing. In one aspect, a system is provided that deposits a stack of layers on a substrate comprising one or more nucleation layers, one or more conductive layers compatible with a high-dielectric-constant (HDC) material and one or more HDC layers in various sequences. The HDC material is useful in depositing thin metal-oxide films and ferroelectric films, as well as other films requiring vaporization of precursor liquids. The system allows PVD and CVD to occur within a centralized system to avoid contamination and reduce processing time. Further, different CVD layers can be deposited within the same CVD chamber.Type: ApplicationFiled: June 15, 2001Publication date: February 7, 2002Inventors: Talex Sajoto, Elaine Pao, Charles N. Dornfest, Jun Zhao
-
Patent number: 6270859Abstract: A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.Type: GrantFiled: March 27, 1998Date of Patent: August 7, 2001Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek
-
Patent number: 6258170Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: September 11, 1997Date of Patent: July 10, 2001Assignee: Applied Materials, Inc.Inventors: Sasson Somekh, Jun Zhao, Charles Dornfest, Talex Sajoto, Leonid Selyutin, Vincent Ku, Chris Wang, Frank Chang, Po Tang
-
Publication number: 20010004478Abstract: A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.Type: ApplicationFiled: March 27, 1998Publication date: June 21, 2001Inventors: JUN ZHAO, ASHOK SINHA, AVI TEPMAN, MEI CHANG, LEE LUO, ALEX SCHREIBER, TALEX SAJOTO, STEFAN WOLFF, CHARLES DORNFEST, MICHAL DANEK
-
Patent number: 6189482Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.Type: GrantFiled: February 12, 1997Date of Patent: February 20, 2001Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Lee Luo, Xiao Liang Jin, Jia-Xiang Wang, Talex Sajoto, Stefan Wolff, Leonid Selyutin, Ashok Sinha
-
Patent number: 6179924Abstract: The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal.Type: GrantFiled: April 28, 1998Date of Patent: January 30, 2001Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Talex Sajoto, Leonid Selyutin
-
Patent number: 6165271Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: December 26, 2000Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Sasson Somekh, Talex Sajoto, Charles Dornfest, Leonid Selyutin
-
Patent number: 6129044Abstract: The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates.Type: GrantFiled: October 6, 1999Date of Patent: October 10, 2000Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek
-
Patent number: 6123773Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: September 26, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Leonid Selyutin, Charles Dornfest, Jun Zhao
-
Patent number: 6120609Abstract: An improved lift mechanism includes a configuration having two sections of bellows welded to a central flange. The central flange provides support for a precisely aligned lift pin support structure. The efficient utilization of space provides space for an enlarged stem while minimizing the interaction between pieces within the processing chamber. Outside the vacuum limits of the processing chamber, a catch arrangement is provided as part of a linkage that allows a single vertical drive to be utilized to manipulate both the vertical motion of lift pins and vertical motion of the pedestal supporting a substrate in a processing chamber. In one configuration a unitized lift mechanism can be replaced as a unit. Particular orientations for utilizing a lift pin support plate with ceramic inserts is disclosed to reduce particle generation within the processing chamber.Type: GrantFiled: July 14, 1997Date of Patent: September 19, 2000Assignee: Applied Materials, Inc.Inventors: Leonid Selyutin, Talex Sajoto, Jun Zhao
-
Patent number: 6099651Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: August 8, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Jun Zhao, Charles Dornfest, Leonid Selyutin