Abstract: A method of controlling a scanning-type plasma processing apparatus using a phased array antenna, includes observing light emission of plasma generated inside a processing container through observation windows provided at multiple positions in the processing container, calculating an in-plane distribution of values representing characteristics of the plasma on a substrate, based on data on the observed light emission of the plasma, and correcting a scanning pattern and/or a plasma density distribution of the plasma based on the calculated in-plane distribution of the values representing the characteristics of the plasma on the substrate.

Abstract: An antenna includes a first waveguide configured to guide VHF radio frequency waves, and a second waveguide configured to guide the VHF radio frequency waves supplied from the first waveguide, the second waveguide having a pair of metal reflective plates therein facing each other across a longitudinal distance along the second waveguide, wherein a tip end of the first waveguide is coupled to the second waveguide at a sideways point thereof between the metal reflective plates, and wherein a distance between the metal reflective plates is ?g/4+?g·n/2, ?g being a wavelength of the VHF radio frequency waves in tube, and n being an integer greater than or equal to zero.

Abstract: A plasma processing apparatus includes: a processing container; and a plurality of gas nozzles protruding from at least one of a top wall and a side wall that constitute the processing container, and including a gas supply hole configured to supply a gas into the processing container. The plurality of gas nozzles include an enlarged diameter portion that is enlarged from a pore of the gas supply hole at a tip end of the gas supply hole of the plurality of gas nozzles, and is opened to a processing space.

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

Abstract: Provided is a plasma processing apparatus including a microwave radiating mechanism configured to radiate microwaves output from a microwave output unit into a processing container. The microwave radiating mechanism includes: an antenna configured to radiate the microwaves; a dielectric member configured to transmit the microwaves radiated from the antenna, and form an electric field for generating surface wave plasma by the microwaves; a sensor provided in the microwave radiating mechanism or adjacent to the microwave radiating mechanism, and configured to monitor electron temperature of the generated plasma; and a controller configured to determine a plasma ignition state based on the electron temperature of the plasma monitored by the sensor.

Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

Abstract: A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate; a plurality of microwave radiation mechanisms, a stage arranged in the processing container to accommodate the substrate thereon and including a lower heating source; and an upper heating source provided on the upper portion of the processing container and arranged at a position that faces the stage.

Abstract: A plasma probe device includes: an antenna installed in an opening portion formed in a wall of a processing container via a seal member that seals between a vacuum space and an atmospheric space; and a light transmission portion installed inside the antenna or forming at least a portion of the antenna, and configured to transmit emission of plasma generated in the vacuum space to the atmospheric space.

Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.

Abstract: A shower plate includes a plate-shaped dielectric main body having gas holes, and a plurality of sealed areas formed in the dielectric main body. Each of the sealed areas has a permittivity lower than a permittivity of the dielectric main body. A volume density of the sealed areas at a central region of the dielectric main body is higher than a volume density of the sealed areas at a peripheral region of the dielectric main body.

Abstract: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

Abstract: A plasma processing apparatus includes a processing chamber, a conductive annular member, a microwave radiating mechanism and a plasma detector. The processing chamber has a ceiling plate with an opening. The conductive annular member is disposed at the opening while being insulated from the ceiling plate. The microwave radiating mechanism is disposed on the ceiling plate to be coaxial with a center of the conductive annular member and configured to radiate microwaves into the processing chamber. Further, a plasma detector is connected to the conductive annular member and configured to detect a state of generated plasma.

Abstract: An apparatus for heating a heating target object includes: a heating member for supporting the heating target object; an electromagnetic wave irradiation part for irradiating an electromagnetic wave to an irradiation surface of the heating member, which is opposite to a surface supporting the heating target object; and a controller. The electromagnetic wave irradiation part includes: an electromagnetic wave output part for outputting the electromagnetic wave; and an antenna unit. The antenna unit includes antenna modules each having an antenna for radiating radiate the electromagnetic wave and a phase shifter for adjusting phase of the electromagnetic wave radiated from the antenna. The controller controls the phase shifters of the antenna modules so that phases of electromagnetic waves radiated from a plurality of the antenna are condensed on an arbitrary portion of the heating member by interference, and a condensed portion of the electromagnetic waves is scanned on the irradiation surface.

Abstract: There is provided a plasma electric field monitor that monitors an electric field intensity of a wave in a plasma processing apparatus for forming a plasma inside a chamber in which a substrate is accommodated and processing the substrate with the plasma, the plasma having the wave on a surface thereof and existing near an inner wall surface of the chamber, including: at least one monopole antenna provided to extend inward of the chamber from a wall portion of the chamber and perpendicular to the inner wall surface of the chamber, and configured to receive the wave formed on the surface of the plasma; and a coaxial line configured to extract a signal of the electric field intensity of the wave received by the at least one monopole antenna.

Abstract: A plasma density monitor for monitoring a plasma density of surface wave plasma in a chamber accommodating a substrate and performs a plasma process on the substrate. The monitor includes: a monopole antenna installed to extend from a wall of the chamber toward an interior of the chamber and to be perpendicular to an inner wall surface of the chamber, and configured to receive a surface wave; a coaxial line configured to extract a detection value from a signal received by the monopole antenna; a length adjuster configured to adjust a length of the monopole antenna; and a controller configured to control the length adjuster so as to obtain a wavelength of the surface wave and the plasma density of the surface wave plasma from the wavelength of the surface wave.

Abstract: A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.

Abstract: A plasma processing apparatus includes a stage provided in a chamber and having a heater therein, the stage being configured to place a substrate thereon, and an annular member provided around the stage to be spaced apart therefrom and formed of a dielectric material. At least one annular groove is formed in a lower surface of the annular member in a radial direction.

Abstract: There is provided a plasma processing apparatus including a microwave output part configured to generate microwaves and to distribute and output the microwaves to a plurality of paths, a microwave transmission part configured to transmit the microwaves outputted from the microwave output part into a process container via a plurality of transmission paths, and a control part configured to control the microwaves. The control part is configured to control the microwaves such that the phases of microwaves become different from each other when the microwaves transmitted via the transmission paths are introduced from a microwave transmitting plate for common use into the process container.

Abstract: An image judging system includes a server and a mobile terminal performing communication therewith. The server includes a position calculating unit that calculates positions of an image of interest and a first landmark image corresponding thereto of a judging target image in whole image data obtained on the basis of a judging target image. The mobile terminal includes: a display unit displaying the image data and the guide mark together; and an imaging unit capturing an image of the judging target image, thereby generating image data, and generating image data related to the judging target image. The server or the mobile terminal includes a guide information generating unit calculating a position of a guide mark on the basis of a position of the detected first landmark image in the image data and a positional relationship between the image of interest and the first landmark image in the whole image data.

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, includes: a microwave output part; a microwave transmission part configured to transmit microwave outputted from the microwave output part; and a microwave radiation member configured to radiate the microwave into the chamber, wherein the microwave transmission part includes a microwave introduction mechanism configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes: a metal main body; a dielectric slow-wave member installed in a portion of the main body; a plurality of slots configured to radiate the microwave introduced through the dielectric slow-wave member therethrough; and a dielectric microwave transmission member installed in a portion facing the chamber in the main body to cover a region where the slots are formed; and a plurality of dielectric layers installed to be separated from each other.