Abstract: A light emitting device in which a reflective film, a first electrode, an organic film including a light emitting layer, a second electrode, and an optical member are arranged in this order on a principal surface of a substrate and a bank configured to cover a peripheral portion of the first electrode is provided to define a light emitting region. The reflective film, the first electrode, the organic film, and the second electrode form a resonator structure configured to resonate, between the reflective film and the second electrode, light generated in the organic film. In the light emitting region, an upper surface of the reflective film is flatter than the first electrode. The resonator structure has a plurality of different optical path lengths.

Abstract: A light emitting device in which light emitting elements sealed by a sealing layer are arranged on a surface of a substrate, is provided. Each of the light emitting elements comprises a first electrode arranged between the substrate and the sealing layer, a second electrode arranged between the first electrode and the sealing layer, and an organic light emitting layer arranged between the first electrode and the second electrode. The light emitting device further comprises an insulating layer configured to cover a edge portion of the first electrode and arranged between the substrate and the sealing layer in a portion between two adjacent light emitting elements, and a light shielding member arranged between the two adjacent light emitting elements, extending through the insulating layer, and extending in the insulating layer and the sealing layer in a direction intersecting the surface.

Abstract: A semiconductor apparatus comprises a first semiconductor region including a first surface and a second surface, in which a semiconductor of a first conductivity type is arranged, a second semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface, a third semiconductor region of a second conductivity type, which is arranged in a region between the second semiconductor region and the second surface and on a side portion of the second semiconductor region, a fourth semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface; and a fifth semiconductor region of the second conductivity type, which is arranged in a region between the fourth semiconductor region and the second surface and on a side portion of the fourth semiconductor region.

Abstract: A semiconductor apparatus comprises a first semiconductor region including a first surface and a second surface, in which a semiconductor of a first conductivity type is arranged, a second semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface, a third semiconductor region of a second conductivity type, which is arranged in a region between the second semiconductor region and the second surface and on a side portion of the second semiconductor region, a fourth semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface; and a fifth semiconductor region of the second conductivity type, which is arranged in a region between the fourth semiconductor region and the second surface and on a side portion of the fourth semiconductor region.

Abstract: A photoelectric conversion device includes photoelectric converter arranged in semiconductor substrate made of silicon and is and transistor arranged on surface of the substrate. The photoelectric converter includes first region of a first conductivity type, configured to accumulate charges, and second region of second conductivity type. The first region is arranged between the surface and the second region. The substrate includes third region as source and/or drain of the transistor. The substrate includes, in position which is below the third region and is apart from the third region, impurity region containing group 14 element other than silicon. Depth from the surface of peak position in density distribution of the group 14 element in the impurity region is smaller than depth from the surface of peak position in density distribution of majority carrier in the second region.

Abstract: A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1×1018 [atoms/cm3] and not more than 1×1020 [atoms/cm3], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration.

Abstract: A photoelectric conversion device includes a photoelectric conversion portion in a silicon layer having a light-receiving surface. The silicon layer includes a P-type impurity region including a base portion having an atomic boron concentration Ba that is the highest of the portions opposite the light-receiving surface with respect to a charge accumulation region and an atomic oxygen concentration Oa, and a deep portion located opposite the charge accumulation region in the depth direction with respect to the base portion and having an atomic boron concentration Bb and an atomic oxygen concentration Ob. The impurity region satisfies Ba×Oa2<Bb×Ob2.

Abstract: Provided is an imaging apparatus including a pixel array in which a plurality of pixels are arranged in a matrix, each of the pixels comprising a photoelectric conversion portion. The pixel array includes a first pixel configured to output an imaging signal in accordance with an incident light and a second pixel configured to output a correction signal used for correcting the imaging signal. The second pixel outputs the correction signal after performing a first reset performed in a state where a first bias voltage is applied to the photoelectric conversion portion of the second pixel and a second reset performed in a state where a second bias voltage that is different from the first bias voltage is applied to the photoelectric conversion portion.

Abstract: A photoelectric conversion device includes photoelectric converter arranged in semiconductor substrate made of silicon and is and transistor arranged on surface of the substrate. The photoelectric converter includes first region of a first conductivity type, configured to accumulate charges, and second region of second conductivity type. The first region is arranged between the surface and the second region. The substrate includes third region as source and/or drain of the transistor. The substrate includes, in position which is below the third region and is apart from the third region, impurity region containing group 14 element other than silicon. Depth from the surface of peak position in density distribution of the group 14 element in the impurity region is smaller than depth from the surface of peak position in density distribution of majority carrier in the second region.

Abstract: A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1×1018 [atoms/cm3] and not more than 1×1020 [atoms/cm3], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration.

Abstract: Provided is an imaging apparatus including a pixel array in which a plurality of pixels are arranged in a matrix, each of the pixels comprising a photoelectric conversion portion. The pixel array includes a first pixel configured to output an imaging signal in accordance with an incident light and a second pixel configured to output a correction signal used for correcting the imaging signal. The second pixel outputs the correction signal after performing a first reset performed in a state where a first bias voltage is applied to the photoelectric conversion portion of the second pixel and a second reset performed in a state where a second bias voltage that is different from the first bias voltage is applied to the photoelectric conversion portion.

Abstract: A photoelectric conversion device includes a photoelectric conversion portion in a silicon layer having a light-receiving surface. The silicon layer includes a P-type impurity region including a base portion having an atomic boron concentration Ba that is the highest of the portions opposite the light-receiving surface with respect to a charge accumulation region and an atomic oxygen concentration Oa, and a deep portion located opposite the charge accumulation region in the depth direction with respect to the base portion and having an atomic boron concentration Bb and an atomic oxygen concentration Ob. The impurity region satisfies Ba×Oa2<Bb×Ob2.

Abstract: An image sensor is provided. The sensor comprises a plurality of photoelectric conversion elements each including a charge accumulation region of a first conductivity type arranged in a semiconductor substrate and an element isolation region arranged between the charge accumulation regions adjacent to each other. The element isolation region includes an insulator isolation portion arranged on an inner side of a trench on a surface of the semiconductor substrate, and includes a semiconductor region of a second conductivity type opposite to the first conductivity type arranged along a side surface of the insulator isolation portion. A gettering region is arranged between the semiconductor region and the insulator isolation portion along at least a part of the side surface of the insulator isolation portion.

Abstract: An image sensor is provided. The sensor comprises a plurality of photoelectric conversion elements each including a charge accumulation region of a first conductivity type arranged in a semiconductor substrate and an element isolation region arranged between the charge accumulation regions adjacent to each other. The element isolation region includes an insulator isolation portion arranged on an inner side of a trench on a surface of the semiconductor substrate, and includes a semiconductor region of a second conductivity type opposite to the first conductivity type arranged along a side surface of the insulator isolation portion. A gettering region is arranged between the semiconductor region and the insulator isolation portion along at least a part of the side surface of the insulator isolation portion.