Patents by Inventor Tasuku Koyanagi

Tasuku Koyanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11011670
    Abstract: A transferring method of transferring a plurality of optical device layers includes a transfer member bonding step, a buffer layer breaking step, a first optical device layer transferring step, an adhesive removing step, and a second optical device layer transferring step. In the transfer member bonding step, an optical device wafer and a transfer member are bonded to each other through an adhesive, and each spacing between adjacent ones of the optical device layers of the optical device wafer which each have been divided in a chip size is filled with the adhesive. In the adhesive removing step, at least part of the adhesive with which each spacing between the adjacent ones of the optical device layers has been filled is removed such that the optical device layers which have been embedded in an adhesive layer in the transfer member bonding step project from the adhesive layer.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: May 18, 2021
    Assignee: DISCO CORPORATION
    Inventor: Tasuku Koyanagi
  • Patent number: 10916679
    Abstract: An optical device wafer processing method for transferring an optical device layer of an optical device wafer onto a transfer member includes: a dividing groove forming step of forming dividing grooves in a buffer layer; a transfer member joining step of joining the transfer member to a front surface of the optical device layer; and a laser beam applying step of applying a pulsed laser beam from a back surface side of a crystalline substrate. In the laser beam applying step, the buffer layer, or the buffer layer and part of the optical device layer, left without being divided in the dividing groove forming step, are modified in nature.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: February 9, 2021
    Assignee: DISCO CORPORATION
    Inventor: Tasuku Koyanagi
  • Publication number: 20210028071
    Abstract: A comparing method includes a processing trace forming step of positioning a condenser at a reference height and a plurality of heights by moving the condenser, and forming a plurality of processing traces in one surface of a workpiece by irradiating different positions of the one surface with a laser beam according to each of the heights, a calculating step of calculating at least one of an average of widths in a plurality of predetermined directions of each of the plurality of processing traces and an area ratio of each of the plurality of processing traces to a circle of a predetermined diameter by analyzing an image of the plurality of processing traces by an image analyzing section, and a comparing step of quantitatively comparing deviations of the plurality of processing traces from a predetermined shape on the basis of at least one of the average and the area ratio.
    Type: Application
    Filed: July 14, 2020
    Publication date: January 28, 2021
    Inventors: Fumiya KAWANO, Tasuku KOYANAGI, Hiroshi MORIKAZU
  • Patent number: 10886159
    Abstract: A method of processing a wafer includes: preparing a support substrate that can transmit ultraviolet rays having a wavelength of 300 nm or shorter and can support the wafer thereon; integrating a face side of the wafer and the support substrate by sticking the face side of the wafer and the support substrate to each other with an UV-curable resin whose adhesive power can be lowered by ultraviolet rays applied thereto interposed therebetween, thereby integrally combining the wafer and the support substrate with each other; processing a reverse side of the wafer; destroying the UV-curable resin by applying a focused laser beam in an ultraviolet range having a wavelength of 300 nm or shorter from a support substrate side; and peeling off the support substrate from the face side of the wafer.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: January 5, 2021
    Assignee: DISCO CORPORATION
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi
  • Patent number: 10854774
    Abstract: A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: December 1, 2020
    Assignee: DISCO CORPORATION
    Inventors: Tasuku Koyanagi, Hiroki Takeuchi
  • Publication number: 20200343405
    Abstract: A transferring method of transferring a plurality of optical device layers includes a transfer member bonding step, a buffer layer breaking step, a first optical device layer transferring step, an adhesive removing step, and a second optical device layer transferring step. In the transfer member bonding step, an optical device wafer and a transfer member are bonded to each other through an adhesive, and each spacing between adjacent ones of the optical device layers of the optical device wafer which each have been divided in a chip size is filled with the adhesive. In the adhesive removing step, at least part of the adhesive with which each spacing between the adjacent ones of the optical device layers has been filled is removed such that the optical device layers which have been embedded in an adhesive layer in the transfer member bonding step project from the adhesive layer.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 29, 2020
    Inventor: Tasuku KOYANAGI
  • Patent number: 10658220
    Abstract: A device transferring method for transferring a plurality of devices to a mounting substrate provided with a plurality of electrodes includes: a step of adhering an expandable tape to the plurality of devices formed on a front surface side of a substrate through a buffer layer; a step of applying a laser beam to the buffer layer from a back surface side of the substrate, to break the buffer layer; a step of moving the tape in a direction for spacing away from the substrate to separate the substrate and the plurality of devices from each other, thereby transferring the plurality of devices to the tape; a step of expanding the tape in such a manner that the layout of the plurality of devices corresponds to the layout of the plurality of electrodes; and a step of bonding the plurality of devices to the plurality of electrodes at once.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: May 19, 2020
    Assignee: DISCO CORPORATION
    Inventors: Tasuku Koyanagi, Akihito Kawai
  • Publication number: 20200150341
    Abstract: A lift-off method includes a dividing step of dividing a buffer layer and an optical device layer stacked on a front side of a substrate to thereby form separate buffer layers and separate optical device layers, a transfer member bonding step of bonding a transfer member to a front side of the separate optical device layers, a buffer layer breaking step of applying a pulsed laser beam to the separate buffer layers to thereby break the separate buffer layers, and an optical device layer transferring step of transferring the separate optical device layers from the substrate to the transfer member. An energy density of each pulse of the pulsed laser beam is set to 1.0 to 5.0 mJ/mm2.
    Type: Application
    Filed: November 6, 2019
    Publication date: May 14, 2020
    Inventor: Tasuku KOYANAGI
  • Publication number: 20200095670
    Abstract: A method for forming an adherend with an optical thin film through sticking the optical thin film to the adherend is provided. The method includes a substrate preparation step of preparing a substrate over which the optical thin film is formed with the intermediary of a bonding layer, a sticking step of sticking the adherend with lower heat resistance compared with quartz glass to the side of the optical thin film of the substrate, a bonding layer breaking step of breaking the bonding layer through carrying out irradiation with a laser beam with such a wavelength as to be transmitted through the substrate and be absorbed by the bonding layer from the surface of the substrate on the opposite side to the surface over which the optical thin film is formed, and a separating step of separating the adherend to which the optical thin film is stuck and the substrate.
    Type: Application
    Filed: September 11, 2019
    Publication date: March 26, 2020
    Inventor: Tasuku KOYANAGI
  • Publication number: 20200075796
    Abstract: An optical device wafer processing method for transferring an optical device layer of an optical device wafer onto a transfer member includes: a dividing groove forming step of forming dividing grooves in a buffer layer; a transfer member joining step of joining the transfer member to a front surface of the optical device layer; and a laser beam applying step of applying a pulsed laser beam from a back surface side of a crystalline substrate. In the laser beam applying step, the buffer layer, or the buffer layer and part of the optical device layer, left without being divided in the dividing groove forming step, are modified in nature.
    Type: Application
    Filed: August 21, 2019
    Publication date: March 5, 2020
    Inventor: Tasuku KOYANAGI
  • Publication number: 20190273009
    Abstract: A device transferring method for transferring a plurality of devices to a mounting substrate provided with a plurality of electrodes includes: a step of adhering an expandable tape to the plurality of devices formed on a front surface side of a substrate through a buffer layer; a step of applying a laser beam to the buffer layer from a back surface side of the substrate, to break the buffer layer; a step of moving the tape in a direction for spacing away from the substrate to separate the substrate and the plurality of devices from each other, thereby transferring the plurality of devices to the tape; a step of expanding the tape in such a manner that the layout of the plurality of devices corresponds to the layout of the plurality of electrodes; and a step of bonding the plurality of devices to the plurality of electrodes at once.
    Type: Application
    Filed: March 1, 2019
    Publication date: September 5, 2019
    Inventors: Tasuku KOYANAGI, Akihito KAWAI
  • Publication number: 20190115494
    Abstract: A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.
    Type: Application
    Filed: October 12, 2018
    Publication date: April 18, 2019
    Inventors: Tasuku KOYANAGI, Hiroki TAKEUCHI
  • Publication number: 20180366362
    Abstract: A method of processing a wafer includes: preparing a support substrate that can transmit ultraviolet rays having a wavelength of 300 nm or shorter and can support the wafer thereon; integrating a face side of the wafer and the support substrate by sticking the face side of the wafer and the support substrate to each other with an UV-curable resin whose adhesive power can be lowered by ultraviolet rays applied thereto interposed therebetween, thereby integrally combining the wafer and the support substrate with each other; processing a reverse side of the wafer; destroying the UV-curable resin by applying a focused laser beam in an ultraviolet range having a wavelength of 300 nm or shorter from a support substrate side; and peeling off the support substrate from the face side of the wafer.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 20, 2018
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi
  • Patent number: 9793166
    Abstract: A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, the optical device layer being formed on the front side of an epitaxy substrate through a buffer layer. A transfer substrate is bonded through a bonding layer to the front side of the optical device layer of the optical device wafer, thereby forming a composite substrate. A pulsed laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer is applied from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer, and the epitaxy substrate is peeled from the optical device layer, thereby transferring the optical device layer to the transfer substrate. Ultrasonic vibration is applied to the composite substrate in transferring the optical device layer.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: October 17, 2017
    Assignee: DISCO CORPORATION
    Inventors: Tasuku Koyanagi, Noboru Takeda, Hiroshi Morikazu
  • Patent number: 9531154
    Abstract: In an optical device wafer, an optical device layer is formed over a front surface of an epitaxy substrate with the intermediary of a buffer layer composed of a Ga compound containing Ga. After a transfer substrate is joined to the optical device layer of the optical device wafer, a separation layer is formed at a boundary surface between the epitaxy substrate and the buffer layer by performing irradiation with a pulsed laser beam having such a wavelength as to be transmitted through the epitaxy substrate and be absorbed by the buffer layer from a back surface side of the epitaxy substrate. Thereafter, an ultrasonic horn that oscillates ultrasonic vibration is brought into contact with an outer circumferential part of the epitaxy substrate to vibrate the epitaxy substrate, and the epitaxy substrate is separated from the transfer substrate to transfer the optical device layer to the transfer substrate.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: December 27, 2016
    Assignee: DISCO CORPORATION
    Inventor: Tasuku Koyanagi
  • Patent number: 9530929
    Abstract: A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of an epitaxy substrate through a buffer layer. A composite substrate is formed by bonding the transfer substrate through a bonding agent to the front side of the optical device layer, thereby forming a composite substrate. The buffer layer is broken up by applying a laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer from the back side of the epitaxy substrate to the buffer layer after performing the composite substrate forming step, thereby breaking the buffer layer. An optical device layer is transferred by peeling off the epitaxy substrate from the optical device layer after performing the buffer layer breaking step, thereby transferring the optical device layer to the transfer substrate.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: December 27, 2016
    Assignee: DISCO CORPORATION
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata
  • Patent number: 9511579
    Abstract: A separation apparatus for separating a composite substrate formed from a first substrate and a second substrate joined together includes an exfoliation unit for advancing into a boundary region between the first substrate and the second substrate of the composite substrate supported by a supporting face of a supporting base and a side face supporting unit to exfoliate the composite substrate into the first substrate and the second substrate. The exfoliation unit includes a wedge portion for advancing into the boundary region between the first substrate and the second substrate, an exfoliation member having a gas outlet open at a tip end of the wedge portion, and an exfoliation member advancing and retracting unit for advancing and retracting the wedge portion of the exfoliation member to and from the boundary region between the first substrate and the second substrate which configure the composite substrate.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: December 6, 2016
    Assignee: Disco Corporation
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata
  • Publication number: 20160013613
    Abstract: In an optical device wafer, an optical device layer is formed over a front surface of an epitaxy substrate with the intermediary of a buffer layer composed of a Ga compound containing Ga. After a transfer substrate is joined to the optical device layer of the optical device wafer, a separation layer is formed at a boundary surface between the epitaxy substrate and the buffer layer by performing irradiation with a pulsed laser beam having such a wavelength as to be transmitted through the epitaxy substrate and be absorbed by the buffer layer from a back surface side of the epitaxy substrate. Thereafter, an ultrasonic horn that oscillates ultrasonic vibration is brought into contact with an outer circumferential part of the epitaxy substrate to vibrate the epitaxy substrate, and the epitaxy substrate is separated from the transfer substrate to transfer the optical device layer to the transfer substrate.
    Type: Application
    Filed: July 13, 2015
    Publication date: January 14, 2016
    Inventor: Tasuku Koyanagi
  • Publication number: 20150328872
    Abstract: A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, the optical device layer being formed on the front side of an epitaxy substrate through a buffer layer. A transfer substrate is bonded through a bonding layer to the front side of the optical device layer of the optical device wafer, thereby forming a composite substrate. A pulsed laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer is applied from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer, and the epitaxy substrate is peeled from the optical device layer, thereby transferring the optical device layer to the transfer substrate. Ultrasonic vibration is applied to the composite substrate in transferring the optical device layer.
    Type: Application
    Filed: May 19, 2015
    Publication date: November 19, 2015
    Inventors: Tasuku Koyanagi, Noboru Takeda, Hiroshi Morikazu
  • Publication number: 20150221818
    Abstract: A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of an epitaxy substrate through a buffer layer. A composite substrate is formed by bonding the transfer substrate through a bonding agent to the front side of the optical device layer, thereby forming a composite substrate. The buffer layer is broken up by applying a laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer from the back side of the epitaxy substrate to the buffer layer after performing the composite substrate forming step, thereby breaking the buffer layer. An optical device layer is transferred by peeling off the epitaxy substrate from the optical device layer after performing the buffer layer breaking step, thereby transferring the optical device layer to the transfer substrate.
    Type: Application
    Filed: January 27, 2015
    Publication date: August 6, 2015
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata