Patents by Inventor Tatsuo Suemasu

Tatsuo Suemasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050056903
    Abstract: A semiconductor package of the invention comprises: a semiconductor element provided with a circuit element on one surface of a semiconductor substrate; an external wiring region provided on an other surface of the semiconductor substrate; a support substrate disposed on the one surface of the semiconductor substrate; an electrode pad disposed on the one surface of the semiconductor substrate; and a through-electrode which extends from the electrode pad through to the other surface of the semiconductor substrate.
    Type: Application
    Filed: August 24, 2004
    Publication date: March 17, 2005
    Inventors: Satoshi Yamamoto, Tatsuo Suemasu, Sayaka Hirafune, Toshihiko Isokawa, Koichi Shiotani, Kazuya Matsumoto
  • Publication number: 20040187975
    Abstract: In the formation of through wirings in a silicon substrate and so forth, there was a need for the development of a technology that would allow metal to be reliably filled particularly in the vicinity of openings of through holes and other fine holes. This invention provides a metal filling method and member with filled metal sections in which, in the inflow and filling of a plating solution into through holes 11 of a substrate 10 by immersing said substrate 10 in heated and melted conductive metal, filled metal sections are formed by preliminarily forming a metal layer 15 on the inner surface of one of the ends of through holes 11 of this substrate 10 as well as on substrate top surface 13 around those openings, removing substrate 10 on which inflow and filling of the plating solution into through holes 11 has been completed from the plating solution, and then cooling to solidify the plating solution that has been filled into the through holes.
    Type: Application
    Filed: April 8, 2004
    Publication date: September 30, 2004
    Applicant: Fujikura Ltd.
    Inventors: Tatsuo Suemasu, Takashi Takizawa
  • Publication number: 20040103724
    Abstract: The semiconductor pressure sensor includes a substrate (20). The sensor includes a diaphragm (26) implemented in the substrate (26) and being displaceable by a pressure medium acting on a side of the substrate (26). The sensor includes sensor circuitry (22, 23) implemented on the opposite side of the substrate in coincidence with the diaphragm (26) for detecting displacement of the diaphragm (26) for pressure.
    Type: Application
    Filed: November 18, 2003
    Publication date: June 3, 2004
    Applicant: FUJIKURA LTD.
    Inventors: Takashi Takizawa, Tatsuo Suemasu, Satoshi Yamamoto
  • Patent number: 6743499
    Abstract: In the formation of through wirings in a silicon substrate and so forth, there was a need for the development of a technology that would allow metal to be reliably filled particularly in the vicinity of openings of through holes and other fine holes. This invention provides a metal filling method and member with filled metal sections in which, in the inflow and filling of a plating solution into through holes 11 of a substrate 10 by immersing said substrate 10 in heated and melted conductive metal, filled metal sections are formed by preliminarily forming a metal layer 15 on the inner surface of one of the ends of through holes 11 of this substrate 10 as well as on substrate top surface 13 around those openings, removing substrate 10 on which inflow and filling of the plating solution into through holes 11 has been completed from the plating solution, and then cooling to solidify the plating solution that has been filled into the through holes.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: June 1, 2004
    Assignee: Fujikura Ltd.
    Inventors: Tatsuo Suemasu, Takashi Takizawa
  • Publication number: 20040092117
    Abstract: A blind hole (3) is formed on a substrate (1) from a first side of the substrate toward a second side of the substrate (1). A conductor (11) is filled in the blind hole (3). The substrate (1) is removed from the opposite side to expose the conductor (13) filled in the blind hole (3).
    Type: Application
    Filed: November 6, 2003
    Publication date: May 13, 2004
    Applicant: FUJIKURA LTD.
    Inventors: Tatsuo Suemasu, Takashi Takizawa
  • Publication number: 20040043615
    Abstract: A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide film 12 on a principal surface of the semiconductor substrate 11, forming a small hole 13 through the semiconductor substrate 11 from the opposite the step to reach to the first silicon oxide film 12, covering the inside of the small hole 13 with the second silicon oxide film 14, forming a first thin metal film 15 and a second thin metal film 16 on the first silicon oxide film 12, partially removing the first silicon oxide film 12 corresponding to the end of the small hole 13, and filling the small hole 13 with the conductive material to form a through hole electrode 17.
    Type: Application
    Filed: August 25, 2003
    Publication date: March 4, 2004
    Applicants: FUJIKURA LTD., OLYMPUS OPTICAL CO., LTD.
    Inventors: Satoshi Yamamoto, Takashi Takizawa, Tatsuo Suemasu, Masahiro Katashiro, Hiroshi Miyajima, Kazuya Matsumoto, Toshihiko Isokawa
  • Publication number: 20030082356
    Abstract: In the formation of through wirings in a silicon substrate and so forth, there was a need for the development of a technology that would allow metal to be reliably filled particularly in the vicinity of openings of through holes and other fine holes. This invention provides a metal filling method and member with filled metal sections in which, in the inflow and filling of a plating solution into through holes 11 of a substrate 10 by immersing said substrate 10 in heated and melted conductive metal, filled metal sections are formed by preliminarily forming a metal layer 15 on the inner surface of one of the ends of through holes 11 of this substrate 10 as well as on substrate top surface 13 around those openings, removing substrate 10 on which inflow and filling of the plating solution into through holes 11 has been completed from the plating solution, and then cooling to solidify the plating solution that has been filled into the through holes.
    Type: Application
    Filed: September 19, 2002
    Publication date: May 1, 2003
    Applicant: Fujikura Ltd.
    Inventors: Tatsuo Suemasu, Takashi Takizawa